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Title: Quantized topological magnetoelectric effect of the zero-plateau quantum anomalous Hall state

Abstract

The topological magnetoelectric effect in a three-dimensional topological insulator is a novel phenomenon, where an electric field induces a magnetic field in the same direction, with a universal coefficient of proportionality quantized in units of $e²/2h$. Here in this paper, we propose that the topological magnetoelectric effect can be realized in the zero-plateau quantum anomalous Hall state of magnetic topological insulators or a ferromagnet-topological insulator heterostructure. The finite-size effect is also studied numerically, where the magnetoelectric coefficient is shown to converge to a quantized value when the thickness of the topological insulator film increases. We further propose a device setup to eliminate nontopological contributions from the side surface.

Authors:
 [1];  [2];  [2];  [1]
  1. Stanford Univ., CA (United States). Dept. of Physics; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
  2. Stanford Univ., CA (United States). Dept. of Physics
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
OSTI Identifier:
1327004
Alternate Identifier(s):
OSTI ID: 1209843
Report Number(s):
SLAC-PUB-16720
Journal ID: ISSN 1098-0121; PRBMDO
Grant/Contract Number:  
AC02-76SF00515; DMR-1305677; DMR-1151786
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 92; Journal Issue: 8; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Wang, Jing, Lian, Biao, Qi, Xiao-Liang, and Zhang, Shou-Cheng. Quantized topological magnetoelectric effect of the zero-plateau quantum anomalous Hall state. United States: N. p., 2015. Web. doi:10.1103/PhysRevB.92.081107.
Wang, Jing, Lian, Biao, Qi, Xiao-Liang, & Zhang, Shou-Cheng. Quantized topological magnetoelectric effect of the zero-plateau quantum anomalous Hall state. United States. doi:https://doi.org/10.1103/PhysRevB.92.081107
Wang, Jing, Lian, Biao, Qi, Xiao-Liang, and Zhang, Shou-Cheng. Mon . "Quantized topological magnetoelectric effect of the zero-plateau quantum anomalous Hall state". United States. doi:https://doi.org/10.1103/PhysRevB.92.081107. https://www.osti.gov/servlets/purl/1327004.
@article{osti_1327004,
title = {Quantized topological magnetoelectric effect of the zero-plateau quantum anomalous Hall state},
author = {Wang, Jing and Lian, Biao and Qi, Xiao-Liang and Zhang, Shou-Cheng},
abstractNote = {The topological magnetoelectric effect in a three-dimensional topological insulator is a novel phenomenon, where an electric field induces a magnetic field in the same direction, with a universal coefficient of proportionality quantized in units of $e²/2h$. Here in this paper, we propose that the topological magnetoelectric effect can be realized in the zero-plateau quantum anomalous Hall state of magnetic topological insulators or a ferromagnet-topological insulator heterostructure. The finite-size effect is also studied numerically, where the magnetoelectric coefficient is shown to converge to a quantized value when the thickness of the topological insulator film increases. We further propose a device setup to eliminate nontopological contributions from the side surface.},
doi = {10.1103/PhysRevB.92.081107},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 8,
volume = 92,
place = {United States},
year = {2015},
month = {8}
}

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Cited by: 17 works
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