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Title: Using Atom-Probe Tomography to Understand Zn O Al / Si O 2 / Si Schottky Diodes

Authors:
; ; ; ; ;
Publication Date:
Grant/Contract Number:
EE0004946
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Name: Physical Review Applied Journal Volume: 6 Journal Issue: 3; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1326861

Jaramillo, R., Youssef, Amanda, Akey, Austin, Schoofs, Frank, Ramanathan, Shriram, and Buonassisi, Tonio. Using Atom-Probe Tomography to Understand Zn O ∶ Al / Si O 2 / Si Schottky Diodes. United States: N. p., Web. doi:10.1103/PhysRevApplied.6.034016.
Jaramillo, R., Youssef, Amanda, Akey, Austin, Schoofs, Frank, Ramanathan, Shriram, & Buonassisi, Tonio. Using Atom-Probe Tomography to Understand Zn O ∶ Al / Si O 2 / Si Schottky Diodes. United States. doi:10.1103/PhysRevApplied.6.034016.
Jaramillo, R., Youssef, Amanda, Akey, Austin, Schoofs, Frank, Ramanathan, Shriram, and Buonassisi, Tonio. 2016. "Using Atom-Probe Tomography to Understand Zn O ∶ Al / Si O 2 / Si Schottky Diodes". United States. doi:10.1103/PhysRevApplied.6.034016.
@article{osti_1326861,
title = {Using Atom-Probe Tomography to Understand Zn O ∶ Al / Si O 2 / Si Schottky Diodes},
author = {Jaramillo, R. and Youssef, Amanda and Akey, Austin and Schoofs, Frank and Ramanathan, Shriram and Buonassisi, Tonio},
abstractNote = {},
doi = {10.1103/PhysRevApplied.6.034016},
journal = {Physical Review Applied},
number = 3,
volume = 6,
place = {United States},
year = {2016},
month = {9}
}