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Title: Prediction of Quantum Anomalous Hall Insulator in half-fluorinated GaBi Honeycomb

Using first-principles electronic structure calculations, we predict half-fluorinated GaBi honeycomb under tensile strain to harbor a quantum anomalous Hall (QAH) insulator phase. We show that this QAH phase is driven by a single inversion in the band structure at the Γ point. Moreover, we have computed the electronic spectrum of a half-fluorinated GaBi nanoribbon with zigzag edges, which shows that only one edge band crosses the Fermi level within the band gap. In conclusion, our results suggest that half-fluorination of the GaBi honeycomb under tensile strain could provide a new platform for developing novel spintronics devices based on the QAH effect.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [3]
  1. National Sun Yat-Sen University, Kaohsiuing (Taiwan). Dept. of Physics
  2. National Univ. of Singapore (Singapore). Centre for Advanced 2D Materials and Graphene Research Centre; National Univ. of Singapore (Singapore). Dept. of Physics
  3. Northeastern Univ., Boston, MA (United States). Dept. of Physics
Publication Date:
Grant/Contract Number:
SC0012575; FG02-07ER46352; AC02-05CH11231; NRF-NRFF2013-03; MOST-104-2112-M-110-002-MY3; MOST-103-2112-M- 110-008-MY3
Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Research Org:
Temple Univ., Philadelphia, PA (United States); Northeastern Univ., Boston, MA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Center for Theoretical Sciences and the Ministry of Science and Technology of Taiwan
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Electronic structure; Topological insulators
OSTI Identifier:
1326664

Chen, Sung-Ping, Huang, Zhi-Quan, Crisostomo, Christian P., Hsu, Chia-Hsiu, Chuang, Feng-Chuan, Lin, Hsin, and Bansil, Arun. Prediction of Quantum Anomalous Hall Insulator in half-fluorinated GaBi Honeycomb. United States: N. p., Web. doi:10.1038/srep31317.
Chen, Sung-Ping, Huang, Zhi-Quan, Crisostomo, Christian P., Hsu, Chia-Hsiu, Chuang, Feng-Chuan, Lin, Hsin, & Bansil, Arun. Prediction of Quantum Anomalous Hall Insulator in half-fluorinated GaBi Honeycomb. United States. doi:10.1038/srep31317.
Chen, Sung-Ping, Huang, Zhi-Quan, Crisostomo, Christian P., Hsu, Chia-Hsiu, Chuang, Feng-Chuan, Lin, Hsin, and Bansil, Arun. 2016. "Prediction of Quantum Anomalous Hall Insulator in half-fluorinated GaBi Honeycomb". United States. doi:10.1038/srep31317. https://www.osti.gov/servlets/purl/1326664.
@article{osti_1326664,
title = {Prediction of Quantum Anomalous Hall Insulator in half-fluorinated GaBi Honeycomb},
author = {Chen, Sung-Ping and Huang, Zhi-Quan and Crisostomo, Christian P. and Hsu, Chia-Hsiu and Chuang, Feng-Chuan and Lin, Hsin and Bansil, Arun},
abstractNote = {Using first-principles electronic structure calculations, we predict half-fluorinated GaBi honeycomb under tensile strain to harbor a quantum anomalous Hall (QAH) insulator phase. We show that this QAH phase is driven by a single inversion in the band structure at the Γ point. Moreover, we have computed the electronic spectrum of a half-fluorinated GaBi nanoribbon with zigzag edges, which shows that only one edge band crosses the Fermi level within the band gap. In conclusion, our results suggest that half-fluorination of the GaBi honeycomb under tensile strain could provide a new platform for developing novel spintronics devices based on the QAH effect.},
doi = {10.1038/srep31317},
journal = {Scientific Reports},
number = ,
volume = 6,
place = {United States},
year = {2016},
month = {8}
}