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Title: Oblique patterned etching of vertical silicon sidewalls

Abstract

A method for patterning on vertical silicon surfaces in high aspect ratio silicontopography is presented. A Faraday cage is used to direct energetic reactive ions obliquely through a patterned suspended membrane positioned over the topography. The technique is capable of forming high-fidelity pattern (100 nm) features, adding an additional fabrication capability to standard top-down fabrication approaches.

Authors:
 [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1326637
Alternate Identifier(s):
OSTI ID: 1420599
Report Number(s):
SAND-2016-9244J
Journal ID: ISSN 0003-6951; APPLAB; 647514
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 14; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; plasma etching; silicon; cell membranes; topography; dielectrics

Citation Formats

Burckel, D. Bruce, Finnegan, Patrick S., Henry, M. David, Resnick, Paul J., and Jarecki, Jr., Robert L. Oblique patterned etching of vertical silicon sidewalls. United States: N. p., 2016. Web. doi:10.1063/1.4945681.
Burckel, D. Bruce, Finnegan, Patrick S., Henry, M. David, Resnick, Paul J., & Jarecki, Jr., Robert L. Oblique patterned etching of vertical silicon sidewalls. United States. doi:10.1063/1.4945681.
Burckel, D. Bruce, Finnegan, Patrick S., Henry, M. David, Resnick, Paul J., and Jarecki, Jr., Robert L. Tue . "Oblique patterned etching of vertical silicon sidewalls". United States. doi:10.1063/1.4945681. https://www.osti.gov/servlets/purl/1326637.
@article{osti_1326637,
title = {Oblique patterned etching of vertical silicon sidewalls},
author = {Burckel, D. Bruce and Finnegan, Patrick S. and Henry, M. David and Resnick, Paul J. and Jarecki, Jr., Robert L.},
abstractNote = {A method for patterning on vertical silicon surfaces in high aspect ratio silicontopography is presented. A Faraday cage is used to direct energetic reactive ions obliquely through a patterned suspended membrane positioned over the topography. The technique is capable of forming high-fidelity pattern (100 nm) features, adding an additional fabrication capability to standard top-down fabrication approaches.},
doi = {10.1063/1.4945681},
journal = {Applied Physics Letters},
number = 14,
volume = 108,
place = {United States},
year = {2016},
month = {4}
}

Journal Article:
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Cited by: 1 work
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