Atomic layer deposition—Sequential self-limiting surface reactions for advanced catalyst “bottom-up” synthesis

Lu, Junling; Elam, Jeffrey W.; Stair, Peter C.

doi:10.1016/j.surfrep.2016.03.003

Title: Atomic layer deposition—Sequential self-limiting surface reactions for advanced catalyst “bottom-up” synthesis

Full Record
Other Related Research

Authors:: Lu, Junling; Elam, Jeffrey W.; Stair, Peter C.

Publication Date:: Wed Jun 01 00:00:00 EDT 2016

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1326421

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Surface Science Reports

Additional Journal Information:: Journal Name: Surface Science Reports Journal Volume: 71 Journal Issue: 2; Journal ID: ISSN 0167-5729

Publisher:: Elsevier

Country of Publication:: Netherlands

Language:: English

Citation Formats


                    Lu, Junling, Elam, Jeffrey W., and Stair, Peter C. Atomic layer deposition—Sequential self-limiting surface reactions for advanced catalyst “bottom-up” synthesis.  Netherlands: N. p., 2016. 
Web.  doi:10.1016/j.surfrep.2016.03.003.

Copy to clipboard


                    Lu, Junling, Elam, Jeffrey W., & Stair, Peter C. Atomic layer deposition—Sequential self-limiting surface reactions for advanced catalyst “bottom-up” synthesis.  Netherlands.  https://doi.org/10.1016/j.surfrep.2016.03.003

Copy to clipboard


                    Lu, Junling, Elam, Jeffrey W., and Stair, Peter C. Wed .  
"Atomic layer deposition—Sequential self-limiting surface reactions for advanced catalyst “bottom-up” synthesis".  Netherlands.  https://doi.org/10.1016/j.surfrep.2016.03.003.

Copy to clipboard


                    
@article{osti_1326421,

  title        = {Atomic layer deposition—Sequential self-limiting surface reactions for advanced catalyst “bottom-up” synthesis},

  author       = {Lu, Junling and Elam, Jeffrey W. and Stair, Peter C.},

  abstractNote = {},

  doi          = {10.1016/j.surfrep.2016.03.003},

  journal      = {Surface Science Reports},

  number       = 2,

  volume       = 71,

  place        = {Netherlands},

  year         = {Wed Jun 01 00:00:00 EDT 2016},

  month        = {Wed Jun 01 00:00:00 EDT 2016}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Publisher's Version of Record
https://doi.org/10.1016/j.surfrep.2016.03.003

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 197 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Atomic layer deposition—Sequential self-limiting surface reactions for advanced catalyst “bottom-up” synthesis

Journal Article Lu, Junling ; Elam, Jeffrey W. ; Stair, Peter C. - Surface Science Reports
https://doi.org/10.1016/j.surfrep.2016.03.003
Electroless Pb Monolayer Deposition—Prelude for Further Advances in Catalyst Monolayer Synthesis via Surface Limited Redox Replacement Reaction

Journal Article Ahmadi, Kamyar ; Dole, Nikhil ; Wu, Dongjun ; ... - ACS Catalysis

Not provided.
https://doi.org/10.1021/acscatal.0c05255
Thermal atomic layer etching of crystalline aluminum nitride using sequential, self-limiting hydrogen fluoride and Sn(acac){sub 2} reactions and enhancement by H{sub 2} and Ar plasmas

Journal Article Johnson, Nicholas R. ; Sun, Huaxing ; Sharma, Kashish ; ... - Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

Thermal atomic layer etching (ALE) of crystalline aluminum nitride (AlN) films was demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin(II) acetylacetonate [Sn(acac){sub 2}] as the reactants. Film thicknesses were monitored versus number of ALE reaction cycles at 275 °C using in situ spectroscopic ellipsometry (SE). A low etch rate of ∼0.07 Å/cycle was measured during etching of the first 40 Å of the film. This small etch rate corresponded with the AlO{sub x}N{sub y} layer on the AlN film. The etch rate then increased to ∼0.36 Å/cycle for the pure AlN films. In situ SE experiments established the HF and Sn(acac){submore »« less
https://doi.org/10.1116/1.4959779
Beam-deposited platinum as versatile catalyst for bottom-up silicon nanowire synthesis

Journal Article Hibst, N. ; Strehle, S. ; Knittel, P. ; ... - Applied Physics Letters

The controlled localized bottom-up synthesis of silicon nanowires on arbitrarily shaped surfaces is still a persisting challenge for functional device assembly. In order to address this issue, electron beam and focused ion beam-assisted catalyst deposition have been investigated with respect to platinum expected to form a PtSi alloy catalyst for a subsequent bottom-up nanowire synthesis. The effective implementation of pure platinum nanoparticles or thin films for silicon nanowire growth has been demonstrated recently. Beam-deposited platinum contains significant quantities of amorphous carbon due to the organic precursor and gallium ions for a focused ion beam-based deposition process. Nevertheless, silicon nanowires couldmore »« less
https://doi.org/10.1063/1.4898580
Surface Fe clusters promote syngas reaction to oxygenates on Rh catalysts modified by atomic layer deposition

Journal Article Nathan, Sindhu S. ; Asundi, Arun S. ; Hoffman, Adam S. ; ... - Journal of Catalysis

Converting syngas to higher oxygenates is a promising strategy for sustainably producing fuels and chemicals used every day. Rh-based catalysts promoted with metal oxides have long been of interest for oxygenate synthesis, but the role of promoters and the structure of the catalyst during reaction are often not well understood. In this work, we characterize a Rh/SiO₂ catalyst modified by Fe₂O₃ deposited by atomic layer deposition (ALD). Here, we show that Fe₂O₃ deposits selectively on the Rh nanoparticles and enhances both the turnover frequency and the oxygenate selectivity of the catalysts. A maximum 29% selectivity towards higher oxygenates is achievedmore »« less
https://doi.org/10.1016/j.jcat.2022.08.026

Full Text Available

Similar Records