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Title: High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes

Here, we present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10 –12, in the range from –18.3 dBm to –12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
SAND-2016-8357J
Journal ID: ISSN 1094-4087; OPEXFF; 647399
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Optics Express
Additional Journal Information:
Journal Volume: 24; Journal Issue: 17; Journal ID: ISSN 1094-4087
Publisher:
Optical Society of America (OSA)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 47 OTHER INSTRUMENTATION; integrated optics; integrated optics devices; detectors; photodiodes
OSTI Identifier:
1326061

Martinez, Nicholas J. D., Derose, Christopher T., Brock, Reinhard W., Starbuck, Andrew L., Pomerene, Andrew T., Lentine, Anthony L., Trotter, Douglas C., and Davids, Paul S.. High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes. United States: N. p., Web. doi:10.1364/OE.24.019072.
Martinez, Nicholas J. D., Derose, Christopher T., Brock, Reinhard W., Starbuck, Andrew L., Pomerene, Andrew T., Lentine, Anthony L., Trotter, Douglas C., & Davids, Paul S.. High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes. United States. doi:10.1364/OE.24.019072.
Martinez, Nicholas J. D., Derose, Christopher T., Brock, Reinhard W., Starbuck, Andrew L., Pomerene, Andrew T., Lentine, Anthony L., Trotter, Douglas C., and Davids, Paul S.. 2016. "High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes". United States. doi:10.1364/OE.24.019072. https://www.osti.gov/servlets/purl/1326061.
@article{osti_1326061,
title = {High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes},
author = {Martinez, Nicholas J. D. and Derose, Christopher T. and Brock, Reinhard W. and Starbuck, Andrew L. and Pomerene, Andrew T. and Lentine, Anthony L. and Trotter, Douglas C. and Davids, Paul S.},
abstractNote = {Here, we present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10–12, in the range from –18.3 dBm to –12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.},
doi = {10.1364/OE.24.019072},
journal = {Optics Express},
number = 17,
volume = 24,
place = {United States},
year = {2016},
month = {8}
}