High voltage studies of inverted-geometry ceramic insulators for a 350 kV DC polarized electron gun

Journal Article · 31 January 2016 · IEEE Transactions on Dielectrics and Electrical Insulation

DOI: https://doi.org/10.1109/TDEI.2015.005126 · OSTI ID:1325554

Hernandez-Garcia, C. ^[1]; Poelker, M. ^[1]; Hansknecht, J. ^[1]

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1. Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)

Jefferson Lab is constructing a 350 kV direct current high voltage photoemission gun employing a compact inverted-geometry insulator. This photogun will produce polarized electron beams at an injector test facility intended for low energy nuclear physics experiments, and to assist the development of new technology for the Continuous Electron Beam Accelerator Facility. A photogun operating at 350kV bias voltage reduces the complexity of the injector design, by eliminating the need for a graded-beta radio frequency “capture” section employed to boost lower voltage beams to relativistic speed. However, reliable photogun operation at 350 kV necessitates solving serious high voltage problems related to breakdown and field emission. This study focuses on developing effective methods to avoid breakdown at the interface between the insulator and the commercial high voltage cable that connects the photogun to the high voltage power supply. Three types of inverted insulators were tested, in combination with two electrode configurations. Our results indicate that tailoring the conductivity of the insulator material, and/or adding a cathode triple-junction screening electrode, effectively serves to increase the hold-off voltage from 300kV to more than 375kV. In conclusion, electrostatic field maps suggest these configurations serve to produce a more uniform potential gradient across the insulator.

• Research Organization: Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Nuclear Physics (NP) (SC-26)
• Grant/Contract Number: AC05-06OR23177
• OSTI ID: 1325554
• Report Number(s): DOE/OR/23177--3932; JLAB-ACC--16-2348
• Journal Information: IEEE Transactions on Dielectrics and Electrical Insulation, Journal Name: IEEE Transactions on Dielectrics and Electrical Insulation Journal Issue: 1 Vol. 23; ISSN 1070-9878
• Publisher: IEEECopyright Statement
• Country of Publication: United States
• Language: English