A new silicon phase with direct band gap and novel optoelectronic properties
Abstract
Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. Additionally, this new allotrope displays large carrier mobility (~104 cm/V · s) at room temperature and a low mass density (1.71 g/cm3), making it a promising material for optoelectronic applications.
- Authors:
-
- Peking Univ., Beijing (China); Key Lab. of High Energy Density Physics Simulation, and IFSA Collaborative Innovation Center, Ministry of Education, Beijing (China)
- Peking Univ., Beijing (China); Key Lab. of High Energy Density Physics Simulation, and IFSA Collaborative Innovation Center, Ministry of Education, Beijing (China); Virginia Commonwealth Univ., Richmond, VA (United States)
- Tohoku Univ., Sendai (Japan); Kutateladze Institute of Thermophysics, Novosibirsk (Russia)
- Virginia Commonwealth Univ., Richmond, VA (United States)
- Publication Date:
- Research Org.:
- Virginia Commonwealth Univ., Richmond, VA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1324969
- Grant/Contract Number:
- FG02-96ER45579
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 5; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; condensed-matter physics; theory and computation
Citation Formats
Guo, Yaguang, Wang, Qian, Kawazoe, Yoshiyuki, and Jena, Puru. A new silicon phase with direct band gap and novel optoelectronic properties. United States: N. p., 2015.
Web. doi:10.1038/srep14342.
Guo, Yaguang, Wang, Qian, Kawazoe, Yoshiyuki, & Jena, Puru. A new silicon phase with direct band gap and novel optoelectronic properties. United States. https://doi.org/10.1038/srep14342
Guo, Yaguang, Wang, Qian, Kawazoe, Yoshiyuki, and Jena, Puru. Wed .
"A new silicon phase with direct band gap and novel optoelectronic properties". United States. https://doi.org/10.1038/srep14342. https://www.osti.gov/servlets/purl/1324969.
@article{osti_1324969,
title = {A new silicon phase with direct band gap and novel optoelectronic properties},
author = {Guo, Yaguang and Wang, Qian and Kawazoe, Yoshiyuki and Jena, Puru},
abstractNote = {Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. Additionally, this new allotrope displays large carrier mobility (~104 cm/V · s) at room temperature and a low mass density (1.71 g/cm3), making it a promising material for optoelectronic applications.},
doi = {10.1038/srep14342},
journal = {Scientific Reports},
number = ,
volume = 5,
place = {United States},
year = {Wed Sep 23 00:00:00 EDT 2015},
month = {Wed Sep 23 00:00:00 EDT 2015}
}
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