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Title: Carrier-Multiplication-Induced Structural Change during Ultrafast Carrier Relaxation and Nonthermal Phase Transition in Semiconductors

Authors:
; ; ; ;
Publication Date:
Grant/Contract Number:
SC0002623
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Name: Physical Review Letters Journal Volume: 117 Journal Issue: 12; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1324375

Bang, Junhyeok, Sun, Y. Y., Liu, X. -Q., Gao, F., and Zhang, S. B.. Carrier-Multiplication-Induced Structural Change during Ultrafast Carrier Relaxation and Nonthermal Phase Transition in Semiconductors. United States: N. p., Web. doi:10.1103/PhysRevLett.117.126402.
Bang, Junhyeok, Sun, Y. Y., Liu, X. -Q., Gao, F., & Zhang, S. B.. Carrier-Multiplication-Induced Structural Change during Ultrafast Carrier Relaxation and Nonthermal Phase Transition in Semiconductors. United States. doi:10.1103/PhysRevLett.117.126402.
Bang, Junhyeok, Sun, Y. Y., Liu, X. -Q., Gao, F., and Zhang, S. B.. 2016. "Carrier-Multiplication-Induced Structural Change during Ultrafast Carrier Relaxation and Nonthermal Phase Transition in Semiconductors". United States. doi:10.1103/PhysRevLett.117.126402.
@article{osti_1324375,
title = {Carrier-Multiplication-Induced Structural Change during Ultrafast Carrier Relaxation and Nonthermal Phase Transition in Semiconductors},
author = {Bang, Junhyeok and Sun, Y. Y. and Liu, X. -Q. and Gao, F. and Zhang, S. B.},
abstractNote = {},
doi = {10.1103/PhysRevLett.117.126402},
journal = {Physical Review Letters},
number = 12,
volume = 117,
place = {United States},
year = {2016},
month = {9}
}

Works referenced in this record:

Generalized Gradient Approximation Made Simple
journal, October 1996
  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865