4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth

Balachandran, Anusha; Song, Haizheng; Sudarshan, T. S.; Chandrashekhar, M. V. S.

doi:10.1016/j.jcrysgro.2016.05.018

Title: 4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth

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Authors:: Balachandran, Anusha; Song, Haizheng; Sudarshan, T. S.; Chandrashekhar, M. V. S.

Publication Date:: Mon Aug 01 00:00:00 EDT 2016

Sponsoring Org.:: USDOE

OSTI Identifier:: 1324352

Grant/Contract Number:: 12-3834

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Journal of Crystal Growth

Additional Journal Information:: Journal Name: Journal of Crystal Growth Journal Volume: 448 Journal Issue: C; Journal ID: ISSN 0022-0248

Publisher:: Elsevier

Country of Publication:: Netherlands

Language:: English

Citation Formats


                    Balachandran, Anusha, Song, Haizheng, Sudarshan, T. S., and Chandrashekhar, M. V. S. 4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth.  Netherlands: N. p., 2016. 
Web.  doi:10.1016/j.jcrysgro.2016.05.018.

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                    Balachandran, Anusha, Song, Haizheng, Sudarshan, T. S., & Chandrashekhar, M. V. S. 4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth.  Netherlands.  https://doi.org/10.1016/j.jcrysgro.2016.05.018

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                    Balachandran, Anusha, Song, Haizheng, Sudarshan, T. S., and Chandrashekhar, M. V. S. Mon .  
"4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth".  Netherlands.  https://doi.org/10.1016/j.jcrysgro.2016.05.018.

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@article{osti_1324352,

  title        = {4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth},

  author       = {Balachandran, Anusha and Song, Haizheng and Sudarshan, T. S. and Chandrashekhar, M. V. S.},

  abstractNote = {},

  doi          = {10.1016/j.jcrysgro.2016.05.018},

  journal      = {Journal of Crystal Growth},

  number       = C,

  volume       = 448,

  place        = {Netherlands},

  year         = {Mon Aug 01 00:00:00 EDT 2016},

  month        = {Mon Aug 01 00:00:00 EDT 2016}

}

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