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Title: 4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth

Authors:
; ; ;
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 448; Journal Issue: C; Related Information: CHORUS Timestamp: 2018-09-11 20:30:15; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Sponsoring Org:
USDOE
Country of Publication:
Netherlands
Language:
English
OSTI Identifier:
1324352

Balachandran, Anusha, Song, Haizheng, Sudarshan, T. S., and Chandrashekhar, M. V. S.. 4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth. Netherlands: N. p., Web. doi:10.1016/j.jcrysgro.2016.05.018.
Balachandran, Anusha, Song, Haizheng, Sudarshan, T. S., & Chandrashekhar, M. V. S.. 4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth. Netherlands. doi:10.1016/j.jcrysgro.2016.05.018.
Balachandran, Anusha, Song, Haizheng, Sudarshan, T. S., and Chandrashekhar, M. V. S.. 2016. "4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth". Netherlands. doi:10.1016/j.jcrysgro.2016.05.018.
@article{osti_1324352,
title = {4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth},
author = {Balachandran, Anusha and Song, Haizheng and Sudarshan, T. S. and Chandrashekhar, M. V. S.},
abstractNote = {},
doi = {10.1016/j.jcrysgro.2016.05.018},
journal = {Journal of Crystal Growth},
number = C,
volume = 448,
place = {Netherlands},
year = {2016},
month = {8}
}