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Title: Ground state of underdoped cuprates in vicinity of superconductor-to-insulator transition

When an insulating underdoped cuprate is doped beyond a critical concentration (x c), high-temperature superconductivity emerges. We have synthesized a series of La 2–xSr xCuO 4 (LSCO) samples using the combinatorial spread technique that allows us to traverse the superconductor-to-insulator transition (SIT) in extremely fine doping steps, Δx≈0.00008. We have measured the Hall resistivity (ρ H) as a function of temperature down to 300 mK in magnetic fields up to 9 T. At very low temperatures, ρ H shows an erratic behavior, jumps and fluctuations exceeding 100%, hysteresis, and memory effects, indicating that the insulating ground state is a charge-cluster glass (CCG). Furthermore, based on the phase diagram depicted in our experiment, we propose a unified picture to account for the anomalous electric transport in the vicinity of the SIT, suggesting that the CCG is in fact a disordered and glassy version of the charge density wave.
 [1] ;  [1] ;  [2] ;  [3]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States); Chinese Academy of Sciences, Beijing (China)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States); Yale Univ., New Haven, CT (United States)
Publication Date:
Report Number(s):
Journal ID: ISSN 1557-1939; R&D Project: MA509MACA; KC0203020
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Journal of Superconductivity and Novel Magnetism
Additional Journal Information:
Journal Name: Journal of Superconductivity and Novel Magnetism; Journal ID: ISSN 1557-1939
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; high-temperature superconductors; charge glass; superconductor-to-insulator; transition; Quantum fluctuations; Hall effect
OSTI Identifier: