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Title: Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices

The Auger lifetime is a critical intrinsic parameter for infrared photodetectors as it determines the longest potential minority carrier lifetime and consequently the fundamental limitations to their performance. Here, Auger recombination is characterized in a long-wave infrared InAs/InAsSb type-II superlattice. Auger coefficients as small as 7.1×10 –26 cm 6/s are experimentally measured using carrier lifetime data at temperatures in the range of 20 K–80 K. The data are compared to Auger-1 coefficients predicted using a 14-band K•p electronic structure model and to coefficients calculated for HgCdTe of the same bandgap. In conclusion, the experimental superlattice Auger coefficients are found to be an order-of-magnitude smaller than HgCdTe.
Authors:
ORCiD logo [1] ;  [2] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Univ. of Illinois, Chicago, IL (United States)
Publication Date:
Report Number(s):
SAND-2015-11141J
Journal ID: ISSN 0003-6951; APPLAB; 616459
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 26; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; III-V semiconductors; superlattices; band gap; carrier lifetimes; carrier density
OSTI Identifier:
1323900

Olson, B. V., Grein, C. H., Kim, J. K., Kadlec, E. A., Klem, J. F., Hawkins, S. D., and Shaner, E. A.. Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices. United States: N. p., Web. doi:10.1063/1.4939147.
Olson, B. V., Grein, C. H., Kim, J. K., Kadlec, E. A., Klem, J. F., Hawkins, S. D., & Shaner, E. A.. Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices. United States. doi:10.1063/1.4939147.
Olson, B. V., Grein, C. H., Kim, J. K., Kadlec, E. A., Klem, J. F., Hawkins, S. D., and Shaner, E. A.. 2015. "Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices". United States. doi:10.1063/1.4939147. https://www.osti.gov/servlets/purl/1323900.
@article{osti_1323900,
title = {Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices},
author = {Olson, B. V. and Grein, C. H. and Kim, J. K. and Kadlec, E. A. and Klem, J. F. and Hawkins, S. D. and Shaner, E. A.},
abstractNote = {The Auger lifetime is a critical intrinsic parameter for infrared photodetectors as it determines the longest potential minority carrier lifetime and consequently the fundamental limitations to their performance. Here, Auger recombination is characterized in a long-wave infrared InAs/InAsSb type-II superlattice. Auger coefficients as small as 7.1×10–26 cm6/s are experimentally measured using carrier lifetime data at temperatures in the range of 20 K–80 K. The data are compared to Auger-1 coefficients predicted using a 14-band K•p electronic structure model and to coefficients calculated for HgCdTe of the same bandgap. In conclusion, the experimental superlattice Auger coefficients are found to be an order-of-magnitude smaller than HgCdTe.},
doi = {10.1063/1.4939147},
journal = {Applied Physics Letters},
number = 26,
volume = 107,
place = {United States},
year = {2015},
month = {12}
}