Fabrication of quantum dots in undoped Si/Si0.8Ge0.2 heterostructures using a single metal-gate layer

Lu, T. M.; Gamble, J. K.; Muller, R. P.; Nielsen, E.; Bethke, D.; Ten Eyck, G. A.; Pluym, T.; Wendt, J. R.; Dominguez, J.; Lilly, M. P.; Carroll, M. S.; Wanke, M. C.

doi:10.1063/1.4961889

Title: Fabrication of quantum dots in undoped Si/Si_0.8Ge_0.2 heterostructures using a single metal-gate layer

Abstract

Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si_0.8Ge_0.2 heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. Furthermore, the device uses only a single metal-gate layer, greatly simplifying device design and fabrication.

Authors:

^[1]; Gamble, J. K. ^[1];

^[1]; Nielsen, E. ^[1]; Bethke, D. ^[1]; Ten Eyck, G. A. ^[1]; Pluym, T. ^[1]; Wendt, J. R. ^[1]; Dominguez, J. ^[1]; Lilly, M. P. ^[1]; Carroll, M. S. ^[1]; Wanke, M. C. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Publication Date:: Mon Aug 01 00:00:00 EDT 2016

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: Work for Others (WFO); USDOE

OSTI Identifier:: 1320515

Report Number(s):: SAND2016-8268J
Journal ID: ISSN 0003-6951; APPLAB; 646874

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 109; Journal Issue: 9; Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Lu, T. M., Gamble, J. K., Muller, R. P., Nielsen, E., Bethke, D., Ten Eyck, G. A., Pluym, T., Wendt, J. R., Dominguez, J., Lilly, M. P., Carroll, M. S., and Wanke, M. C. Fabrication of quantum dots in undoped Si/Si0.8Ge0.2 heterostructures using a single metal-gate layer.  United States: N. p., 2016. 
Web.  doi:10.1063/1.4961889.

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                    Lu, T. M., Gamble, J. K., Muller, R. P., Nielsen, E., Bethke, D., Ten Eyck, G. A., Pluym, T., Wendt, J. R., Dominguez, J., Lilly, M. P., Carroll, M. S., & Wanke, M. C. Fabrication of quantum dots in undoped Si/Si0.8Ge0.2 heterostructures using a single metal-gate layer.  United States.  https://doi.org/10.1063/1.4961889

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                    Lu, T. M., Gamble, J. K., Muller, R. P., Nielsen, E., Bethke, D., Ten Eyck, G. A., Pluym, T., Wendt, J. R., Dominguez, J., Lilly, M. P., Carroll, M. S., and Wanke, M. C. Mon .  
"Fabrication of quantum dots in undoped Si/Si0.8Ge0.2 heterostructures using a single metal-gate layer".  United States.  https://doi.org/10.1063/1.4961889.  https://www.osti.gov/servlets/purl/1320515.

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@article{osti_1320515,

  title        = {Fabrication of quantum dots in undoped Si/Si0.8Ge0.2 heterostructures using a single metal-gate layer},

  author       = {Lu, T. M. and Gamble, J. K. and Muller, R. P. and Nielsen, E. and Bethke, D. and Ten Eyck, G. A. and Pluym, T. and Wendt, J. R. and Dominguez, J. and Lilly, M. P. and Carroll, M. S. and Wanke, M. C.},

  abstractNote = {Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si0.8Ge0.2 heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. Furthermore, the device uses only a single metal-gate layer, greatly simplifying device design and fabrication.},

  doi          = {10.1063/1.4961889},

  journal      = {Applied Physics Letters},

  number       = 9,

  volume       = 109,

  place        = {United States},

  year         = {Mon Aug 01 00:00:00 EDT 2016},

  month        = {Mon Aug 01 00:00:00 EDT 2016}

}

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Works referenced in this record:

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Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry
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Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs
journal, May 2009

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Works referencing / citing this record:

Enhancement-mode two-channel triple quantum dot from an undoped Si/Si _0.8 Ge _0.2 quantum well hetero-structure
journal, June 2018

Studenikin, S. A.; Gaudreau, L.; Kataoka, K.
Applied Physics Letters, Vol. 112, Issue 23
DOI: 10.1063/1.5023596

Quantum dots with split enhancement gate tunnel barrier control
journal, February 2019

Rochette, S.; Rudolph, M.; Roy, A. -M.
Applied Physics Letters, Vol. 114, Issue 8
DOI: 10.1063/1.5091111

Single and double hole quantum dots in strained Ge/SiGe quantum wells
journal, March 2019

Hardy, Will J.; Harris, C. Thomas; Su, Yi-Hsin
Nanotechnology, Vol. 30, Issue 21
DOI: 10.1088/1361-6528/ab061e

Single and Double Hole Quantum Dots in Strained Ge/SiGe Quantum Wells
text, January 2018

Hardy, Will J.; Harris, C. Thomas; Su, Yi-Hsin
arXiv
DOI: 10.48550/arxiv.1808.07077

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Title: Fabrication of quantum dots in undoped Si/Si0.8Ge0.2 heterostructures using a single metal-gate layer

Abstract

Citation Formats

A silicon-based nuclear spin quantum computer journal, May 1998

Capacitively induced high mobility two-dimensional electron gas in undoped Si∕Si1−xGex heterostructures with atomic-layer-deposited dielectric journal, April 2007

Screening of remote charge scattering sites from the oxide/silicon interface of strained Si two-dimensional electron gases by an intermediate tunable shielding electron layer journal, June 2014

A reconfigurable gate architecture for Si/SiGe quantum dots journal, June 2015

Quantum control and process tomography of a semiconductor quantum dot hybrid qubit journal, July 2014

Electron transport through double quantum dots journal, December 2002

Isotopically enhanced triple-quantum-dot qubit journal, May 2015

Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry journal, July 2011

Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors journal, October 2011

High-mobility Si and Ge structures journal, December 1997

Quantum computation with quantum dots journal, January 1998

Silicon quantum electronics journal, July 2013

Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs journal, May 2009

Enhancement-mode two-channel triple quantum dot from an undoped Si/Si 0.8 Ge 0.2 quantum well hetero-structure journal, June 2018

Quantum dots with split enhancement gate tunnel barrier control journal, February 2019

Single and double hole quantum dots in strained Ge/SiGe quantum wells journal, March 2019

Single and Double Hole Quantum Dots in Strained Ge/SiGe Quantum Wells text, January 2018

Title: Fabrication of quantum dots in undoped Si/Si_0.8Ge_0.2 heterostructures using a single metal-gate layer

A silicon-based nuclear spin quantum computer
journal, May 1998

Capacitively induced high mobility two-dimensional electron gas in undoped Si∕Si1−xGex heterostructures with atomic-layer-deposited dielectric
journal, April 2007

Screening of remote charge scattering sites from the oxide/silicon interface of strained Si two-dimensional electron gases by an intermediate tunable shielding electron layer
journal, June 2014

A reconfigurable gate architecture for Si/SiGe quantum dots
journal, June 2015

Quantum control and process tomography of a semiconductor quantum dot hybrid qubit
journal, July 2014

Electron transport through double quantum dots
journal, December 2002

Isotopically enhanced triple-quantum-dot qubit
journal, May 2015

Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry
journal, July 2011

Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors
journal, October 2011

High-mobility Si and Ge structures
journal, December 1997

Quantum computation with quantum dots
journal, January 1998

Silicon quantum electronics
journal, July 2013

Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs
journal, May 2009

Enhancement-mode two-channel triple quantum dot from an undoped Si/Si _0.8 Ge _0.2 quantum well hetero-structure
journal, June 2018

Quantum dots with split enhancement gate tunnel barrier control
journal, February 2019

Single and double hole quantum dots in strained Ge/SiGe quantum wells
journal, March 2019

Single and Double Hole Quantum Dots in Strained Ge/SiGe Quantum Wells
text, January 2018