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Title: Electronic stopping for protons and α particles from first-principles electron dynamics: The case of silicon carbide

Authors:
;
Publication Date:
Grant/Contract Number:
AC02-06CH11357
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 94 Journal Issue: 11; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1319968

Yost, Dillon C., and Kanai, Yosuke. Electronic stopping for protons and α particles from first-principles electron dynamics: The case of silicon carbide. United States: N. p., Web. doi:10.1103/PhysRevB.94.115107.
Yost, Dillon C., & Kanai, Yosuke. Electronic stopping for protons and α particles from first-principles electron dynamics: The case of silicon carbide. United States. doi:10.1103/PhysRevB.94.115107.
Yost, Dillon C., and Kanai, Yosuke. 2016. "Electronic stopping for protons and α particles from first-principles electron dynamics: The case of silicon carbide". United States. doi:10.1103/PhysRevB.94.115107.
@article{osti_1319968,
title = {Electronic stopping for protons and α particles from first-principles electron dynamics: The case of silicon carbide},
author = {Yost, Dillon C. and Kanai, Yosuke},
abstractNote = {},
doi = {10.1103/PhysRevB.94.115107},
journal = {Physical Review B},
number = 11,
volume = 94,
place = {United States},
year = {2016},
month = {9}
}

Works referenced in this record:

Generalized Gradient Approximation Made Simple
journal, October 1996
  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Microstructural development in cubic silicon carbide during irradiation at elevated temperatures
journal, June 2006