Controlled Synthesis and Understanding of Growth Mechanism – Parameters for Atmospheric Pressure Hydrothermal Synthesis of Ultrathin Secondary ZnO Nanowires

Jiao, Mingzhi; Nguyen, Duc; Nguyen, Van; Nguyen, Van; Hjort, Klas; Nguyen, Hugo

doi:10.9734/JSRR/2016/22427

Title: Controlled Synthesis and Understanding of Growth Mechanism – Parameters for Atmospheric Pressure Hydrothermal Synthesis of Ultrathin Secondary ZnO Nanowires

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Abstract

We measured luminescence and scintillation in ZnO single crystals by photoluminescence and X-ray-induced luminescence (XRIL). XRIL allowed a direct comparison to be made between the near-band emission (NBE) and trap emissions providing insight into the carrier recombination efficiency in the ZnO crystals. In the origin of green emission, the dominant trap emission in ZnO, was investigated by gamma-induced positron spectroscopy (GIPS) - a unique defect spectroscopy method that enables positron lifetime measurements to be made for a sample without contributions from positron annihilation in the source materials or the surroundings. Moreover, the measurements showed the absence of positron traps in the crystals and yielded a bulk positron lifetime value that is in complete agreement with the predicted theoretical value = thereby confirming the advantage of the GIPS method. By combining scintillation measurements with XRIL, the fast scintillation in ZnO crystals was found to be strongly correlated with the ratio between the defect luminescence and NBE.

Authors:

Jiao, Mingzhi ^[1]; Nguyen, Duc ^[2]; Nguyen, Van ^[2]; Nguyen, Van ^[2]; Hjort, Klas ^[1]; Nguyen, Hugo ^[1]

Uppsala Univ. (Sweden). Division of Microsystem Technology
Hanoi Univ. of Science and Technology (Vietnam). International Training Inst. for Materials Science

Publication Date:: 2015-11-10

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE Office of Science (SC)

OSTI Identifier:: 1319158

Grant/Contract Number:: AC05-00OR22725

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Scientific Research and Reports

Additional Journal Information:: Journal Volume: 9; Journal Issue: 5; Journal ID: ISSN 2320-0227

Publisher:: SCIENCEDOMAIN International

Country of Publication:: United States

Language:: English

Subject:: 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; Luminescence; scintillation; ZnO single crystal; X-ray-induced luminescence; spectroscopy

Citation Formats


                    Jiao, Mingzhi, Nguyen, Duc, Nguyen, Van, Nguyen, Van, Hjort, Klas, and Nguyen, Hugo. Controlled Synthesis and Understanding of Growth Mechanism – Parameters for Atmospheric Pressure Hydrothermal Synthesis of Ultrathin Secondary ZnO Nanowires.  United States: N. p., 2015. 
Web.  doi:10.9734/JSRR/2016/22427.

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                    Jiao, Mingzhi, Nguyen, Duc, Nguyen, Van, Nguyen, Van, Hjort, Klas, & Nguyen, Hugo. Controlled Synthesis and Understanding of Growth Mechanism – Parameters for Atmospheric Pressure Hydrothermal Synthesis of Ultrathin Secondary ZnO Nanowires.  United States.  https://doi.org/10.9734/JSRR/2016/22427

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                    Jiao, Mingzhi, Nguyen, Duc, Nguyen, Van, Nguyen, Van, Hjort, Klas, and Nguyen, Hugo. Tue .  
"Controlled Synthesis and Understanding of Growth Mechanism – Parameters for Atmospheric Pressure Hydrothermal Synthesis of Ultrathin Secondary ZnO Nanowires".  United States.  https://doi.org/10.9734/JSRR/2016/22427.  https://www.osti.gov/servlets/purl/1319158.

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@article{osti_1319158,

  title        = {Controlled Synthesis and Understanding of Growth Mechanism – Parameters for Atmospheric Pressure Hydrothermal Synthesis of Ultrathin Secondary ZnO Nanowires},

  author       = {Jiao, Mingzhi and Nguyen, Duc and Nguyen, Van and Nguyen, Van and Hjort, Klas and Nguyen, Hugo},

  abstractNote = {We measured luminescence and scintillation in ZnO single crystals by photoluminescence and X-ray-induced luminescence (XRIL). XRIL allowed a direct comparison to be made between the near-band emission (NBE) and trap emissions providing insight into the carrier recombination efficiency in the ZnO crystals. In the origin of green emission, the dominant trap emission in ZnO, was investigated by gamma-induced positron spectroscopy (GIPS) - a unique defect spectroscopy method that enables positron lifetime measurements to be made for a sample without contributions from positron annihilation in the source materials or the surroundings. Moreover, the measurements showed the absence of positron traps in the crystals and yielded a bulk positron lifetime value that is in complete agreement with the predicted theoretical value = thereby confirming the advantage of the GIPS method. By combining scintillation measurements with XRIL, the fast scintillation in ZnO crystals was found to be strongly correlated with the ratio between the defect luminescence and NBE.},

  doi          = {10.9734/JSRR/2016/22427},

  journal      = {Journal of Scientific Research and Reports},

  number       = 5,

  volume       = 9,

  place        = {United States},

  year         = {2015},

  month        = {11}

}

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