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Title: Defect control of conventional and anomalous electron transport at complex oxide interfaces

Using low-temperature electrical measurements, the interrelation between electron transport, magnetic properties, and ionic defect structure in complex oxide interface systems is investigated, focusing on NdGaO 3/SrTiO 3 (100) interfaces. Field-dependent Hall characteristics (2–300 K) are obtained for samples grown at various growth pressures. In addition to multiple electron transport, interfacial magnetism is tracked exploiting the anomalous Hall effect (AHE). These two properties both contribute to a nonlinearity in the field dependence of the Hall resistance, with multiple carrier conduction evident below 30 K and AHE at temperatures ≲10 K. Considering these two sources of nonlinearity, we suggest a phenomenological model capturing the complex field dependence of the Hall characteristics in the low-temperature regime. Our model allows the extraction of the conventional transport parameters and a qualitative analysis of the magnetization. The electron mobility is found to decrease systematically with increasing growth pressure. This suggests dominant electron scattering by acceptor-type strontium vacancies incorporated during growth. The AHE scales with growth pressure. In conclusion, the most pronounced AHE is found at increased growth pressure and, thus, in the most defective, low-mobility samples, indicating a correlation between transport, magnetism, and cation defect concentration.
Authors:
 [1] ;  [2] ;  [3] ;  [3] ;  [3] ;  [3] ;  [4] ;  [5] ;  [6] ;  [7] ;  [8] ;  [8] ;  [9]
  1. SLAC National Accelerator Lab., Menlo Park, CA (United States); Forschungszentrum Juelich GmbH, and Juelich Aachen Research Alliance for Fundamentals on Future Information Technology (JARA-FIT), Juelich (Germany)
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States); Univ. of Bristol, Bristol (United Kingdom)
  3. Stanford Univ., Stanford, CA (United States)
  4. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  5. SLAC National Accelerator Lab., Menlo Park, CA (United States); The Univ. of Tokyo, Tokyo (Japan)
  6. SLAC National Accelerator Lab., Menlo Park, CA (United States); The Univ. of Tokyo, Chiba (Japan)
  7. SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); High Energy Accelerator Research Organization (KEK), Tsukuba (Japan)
  8. Forschungszentrum Juelich GmbH, and Juelich Aachen Research Alliance for Fundamentals on Future Information Technology (JARA-FIT), Juelich (Germany)
  9. SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)
Publication Date:
Grant/Contract Number:
AC02-76SF00515; GBMF4415; N00014-12-1-0976
Type:
Published Article
Journal Name:
Physical Review. X
Additional Journal Information:
Journal Volume: 6; Journal Issue: 3; Journal ID: ISSN 2160-3308
Publisher:
American Physical Society
Research Org:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS
OSTI Identifier:
1312063
Alternate Identifier(s):
OSTI ID: 1312560

Gunkel, F., Bell, Chris, Inoue, Hisashi, Kim, Bongju, Swartz, Adrian G., Merz, Tyler A., Hikita, Yasuyuki, Harashima, Satoshi, Sato, Hiroki K., Minohara, Makoto, Hoffmann-Eifert, Susanne, Dittmann, Regina, and Hwang, Harold Y.. Defect control of conventional and anomalous electron transport at complex oxide interfaces. United States: N. p., Web. doi:10.1103/PhysRevX.6.031035.
Gunkel, F., Bell, Chris, Inoue, Hisashi, Kim, Bongju, Swartz, Adrian G., Merz, Tyler A., Hikita, Yasuyuki, Harashima, Satoshi, Sato, Hiroki K., Minohara, Makoto, Hoffmann-Eifert, Susanne, Dittmann, Regina, & Hwang, Harold Y.. Defect control of conventional and anomalous electron transport at complex oxide interfaces. United States. doi:10.1103/PhysRevX.6.031035.
Gunkel, F., Bell, Chris, Inoue, Hisashi, Kim, Bongju, Swartz, Adrian G., Merz, Tyler A., Hikita, Yasuyuki, Harashima, Satoshi, Sato, Hiroki K., Minohara, Makoto, Hoffmann-Eifert, Susanne, Dittmann, Regina, and Hwang, Harold Y.. 2016. "Defect control of conventional and anomalous electron transport at complex oxide interfaces". United States. doi:10.1103/PhysRevX.6.031035.
@article{osti_1312063,
title = {Defect control of conventional and anomalous electron transport at complex oxide interfaces},
author = {Gunkel, F. and Bell, Chris and Inoue, Hisashi and Kim, Bongju and Swartz, Adrian G. and Merz, Tyler A. and Hikita, Yasuyuki and Harashima, Satoshi and Sato, Hiroki K. and Minohara, Makoto and Hoffmann-Eifert, Susanne and Dittmann, Regina and Hwang, Harold Y.},
abstractNote = {Using low-temperature electrical measurements, the interrelation between electron transport, magnetic properties, and ionic defect structure in complex oxide interface systems is investigated, focusing on NdGaO3/SrTiO3 (100) interfaces. Field-dependent Hall characteristics (2–300 K) are obtained for samples grown at various growth pressures. In addition to multiple electron transport, interfacial magnetism is tracked exploiting the anomalous Hall effect (AHE). These two properties both contribute to a nonlinearity in the field dependence of the Hall resistance, with multiple carrier conduction evident below 30 K and AHE at temperatures ≲10 K. Considering these two sources of nonlinearity, we suggest a phenomenological model capturing the complex field dependence of the Hall characteristics in the low-temperature regime. Our model allows the extraction of the conventional transport parameters and a qualitative analysis of the magnetization. The electron mobility is found to decrease systematically with increasing growth pressure. This suggests dominant electron scattering by acceptor-type strontium vacancies incorporated during growth. The AHE scales with growth pressure. In conclusion, the most pronounced AHE is found at increased growth pressure and, thus, in the most defective, low-mobility samples, indicating a correlation between transport, magnetism, and cation defect concentration.},
doi = {10.1103/PhysRevX.6.031035},
journal = {Physical Review. X},
number = 3,
volume = 6,
place = {United States},
year = {2016},
month = {8}
}

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