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Title: High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity

Abstract

Memristive switching serves as the basis for a new generation of electronic devices. Conventional memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies. Memristors based on alternative mechanisms have been explored, but achieving both high on/off ratio and low switching energy, as needed in applications, remains a challenge. This paper reports memristive switching in La0.7Ca0.3MnO3/PrBa2Cu3O7 bilayers with an on/off ratio greater than 103 and results of density functional theory calculations in terms of which it is concluded that the phenomenon is likely the result of a new type of interfacial magnetoelectricity. More specifically, this study shows that an external electric field induces subtle displacements of the interfacial Mn ions, which switches on/off an interfacial magnetic “dead layer”, resulting in memristive behavior for spin-polarized electron transport across the bilayer. The interfacial nature of the switching entails low energy cost, about of a tenth of atto Joule for writing/erasing a “bit”. To conclude, the results indicate new opportunities for manganite/cuprate systems and other transition metal oxide junctions in memristive applications.

Authors:
 [1];  [2];  [3];  [3];  [4];  [5];  [6];  [7];  [7];  [7];  [8];  [3];  [3];  [3];  [9]
  1. Vanderbilt Univ., Nashville, TN (United States); University of Memphis, TN (United States)
  2. SuperSTEM Laboratory, Daresbury (United Kingdom); Oxford University (United Kingdom)
  3. Complutense University of Madrid (Spain)
  4. Vanderbilt Univ., Nashville, TN (United States)
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
  6. Argonne National Lab. (ANL), Argonne, IL (United States)
  7. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
  8. Complutense University of Madrid (Spain); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  9. Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Argonne National Lab. (ANL), Argonne, IL (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Vanderbilt Univ., Nashville, TN (United States)
Sponsoring Org.:
National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1311245
Alternate Identifier(s):
OSTI ID: 1352661; OSTI ID: 1456954; OSTI ID: 1597786
Grant/Contract Number:  
AC05-00OR22725; FG02-09ER46554; AC02-­06CH11357; AC02-05CH11231; DMR130121; AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Materials Interfaces
Additional Journal Information:
Journal Volume: 3; Journal Issue: 16; Journal ID: ISSN 2196-7350
Publisher:
Wiley-VCH
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Shen, Xiao, Pennycook, Timothy J., Hernandez-Martin, David, Pérez, Ana, Puzyrev, Yevgeniy S., Liu, Yaohua, te Velthuis, Suzanne G. E., Freeland, John W., Shafer, Padraic, Zhu, Chenhui, Varela, Maria, Leon, Carlos, Sefrioui, Zouhair, Santamaria, Jacobo, and Pantelides, Sokrates T. High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity. United States: N. p., 2016. Web. doi:10.1002/admi.201600086.
Shen, Xiao, Pennycook, Timothy J., Hernandez-Martin, David, Pérez, Ana, Puzyrev, Yevgeniy S., Liu, Yaohua, te Velthuis, Suzanne G. E., Freeland, John W., Shafer, Padraic, Zhu, Chenhui, Varela, Maria, Leon, Carlos, Sefrioui, Zouhair, Santamaria, Jacobo, & Pantelides, Sokrates T. High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity. United States. doi:10.1002/admi.201600086.
Shen, Xiao, Pennycook, Timothy J., Hernandez-Martin, David, Pérez, Ana, Puzyrev, Yevgeniy S., Liu, Yaohua, te Velthuis, Suzanne G. E., Freeland, John W., Shafer, Padraic, Zhu, Chenhui, Varela, Maria, Leon, Carlos, Sefrioui, Zouhair, Santamaria, Jacobo, and Pantelides, Sokrates T. Fri . "High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity". United States. doi:10.1002/admi.201600086. https://www.osti.gov/servlets/purl/1311245.
@article{osti_1311245,
title = {High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity},
author = {Shen, Xiao and Pennycook, Timothy J. and Hernandez-Martin, David and Pérez, Ana and Puzyrev, Yevgeniy S. and Liu, Yaohua and te Velthuis, Suzanne G. E. and Freeland, John W. and Shafer, Padraic and Zhu, Chenhui and Varela, Maria and Leon, Carlos and Sefrioui, Zouhair and Santamaria, Jacobo and Pantelides, Sokrates T.},
abstractNote = {Memristive switching serves as the basis for a new generation of electronic devices. Conventional memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies. Memristors based on alternative mechanisms have been explored, but achieving both high on/off ratio and low switching energy, as needed in applications, remains a challenge. This paper reports memristive switching in La0.7Ca0.3MnO3/PrBa2Cu3O7 bilayers with an on/off ratio greater than 103 and results of density functional theory calculations in terms of which it is concluded that the phenomenon is likely the result of a new type of interfacial magnetoelectricity. More specifically, this study shows that an external electric field induces subtle displacements of the interfacial Mn ions, which switches on/off an interfacial magnetic “dead layer”, resulting in memristive behavior for spin-polarized electron transport across the bilayer. The interfacial nature of the switching entails low energy cost, about of a tenth of atto Joule for writing/erasing a “bit”. To conclude, the results indicate new opportunities for manganite/cuprate systems and other transition metal oxide junctions in memristive applications.},
doi = {10.1002/admi.201600086},
journal = {Advanced Materials Interfaces},
number = 16,
volume = 3,
place = {United States},
year = {2016},
month = {5}
}

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