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Title: Distinct photoluminescence and Raman spectroscopy signatures for identifying highly crystalline WS2 monolayers produced by different growth methods

Abstract

We report that transition metal dichalcogenides (TMDs) such as WS2 show exciting promise in electronic and optoelectronic applications. Significant variations in the transport, Raman, and photoluminescence (PL) can be found in the literature, yet it is rarely addressed why this is. In this report, Raman and PL of monolayered WS2 produced via different methods are studied and distinct features that indicate the degree of crystallinity of the material are observed. While the intensity of the LA(M) Raman mode is found to be a useful indicator to assess the crystallinity, PL is drastically more sensitive to the quality of the material than Raman spectroscopy. We also show that even exfoliated crystals, which are usually regarded as the most pristine material, can contain large amounts of defects that would not be apparent without Raman and PL measurements. Ultimately, these findings can be applied to the understanding of other two-dimensional heterostructured systems.

Authors:
 [1];  [2];  [1];  [3];  [1];  [1];  [1];  [4];  [1];  [5];  [3];  [1];  [6]
+ Show Author Affiliations
  1. Pennsylvania State Univ., University Park, PA (United States). Dept of Physics and Center for 2-Dimensional and Layered Materials
  2. Pennsylvania State Univ., University Park, PA (United States). Dept of Physics and Center for 2-Dimensional and Layered Materials; Erciyes Univ., Kayseri (Turkey). Nanotechnology Research Center and Kayseri Vocational College
  3. Pennsylvania State Univ., University Park, PA (United States). Dept of Chemistry
  4. Pennsylvania State Univ., University Park, PA (United States). Materials Research Inst.
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
  6. Pennsylvania State Univ., University Park, PA (United States). Dept of Physics and Center for 2-Dimensional and Layered Materials; Pennsylvania State Univ., University Park, PA (United States). Dept of Chemistry; Pennsylvania State Univ., University Park, PA (United States). Dept of Materials Science & Engineering; Shinshu Univ., Nagano (Japan)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
US Army Research Office (ARO); National Science Foundation (NSF); USDOE Office of Science (SC); Pennsylvania State Univ.
OSTI Identifier:
1311237
Grant/Contract Number:  
AC05-00OR22725; W911NF-11-1-0362; DMR-0820404; EFRI-1433311
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Materials Research
Additional Journal Information:
Journal Volume: 31; Journal Issue: 07; Journal ID: ISSN 0884-2914
Publisher:
Materials Research Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Raman spectroscopy; luminescence; defects

Citation Formats

McCreary, Amber, Berkdemir, Ayse, Wang, Junjie, Nguyen, Minh An, Elías, Ana Laura, Perea-López, Néstor, Fujisawa, Kazunori, Kabius, Bernd, Carozo, Victor, Cullen, David A., Mallouk, Thomas E., Zhu, J., and Terrones, Mauricio. Distinct photoluminescence and Raman spectroscopy signatures for identifying highly crystalline WS2 monolayers produced by different growth methods. United States: N. p., 2016. Web. doi:10.1557/jmr.2016.47.
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McCreary, Amber, Berkdemir, Ayse, Wang, Junjie, Nguyen, Minh An, Elías, Ana Laura, Perea-López, Néstor, Fujisawa, Kazunori, Kabius, Bernd, Carozo, Victor, Cullen, David A., Mallouk, Thomas E., Zhu, J., & Terrones, Mauricio. Distinct photoluminescence and Raman spectroscopy signatures for identifying highly crystalline WS2 monolayers produced by different growth methods. United States. https://doi.org/10.1557/jmr.2016.47
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McCreary, Amber, Berkdemir, Ayse, Wang, Junjie, Nguyen, Minh An, Elías, Ana Laura, Perea-López, Néstor, Fujisawa, Kazunori, Kabius, Bernd, Carozo, Victor, Cullen, David A., Mallouk, Thomas E., Zhu, J., and Terrones, Mauricio. Tue . "Distinct photoluminescence and Raman spectroscopy signatures for identifying highly crystalline WS2 monolayers produced by different growth methods". United States. https://doi.org/10.1557/jmr.2016.47. https://www.osti.gov/servlets/purl/1311237.
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@article{osti_1311237,
title = {Distinct photoluminescence and Raman spectroscopy signatures for identifying highly crystalline WS2 monolayers produced by different growth methods},
author = {McCreary, Amber and Berkdemir, Ayse and Wang, Junjie and Nguyen, Minh An and Elías, Ana Laura and Perea-López, Néstor and Fujisawa, Kazunori and Kabius, Bernd and Carozo, Victor and Cullen, David A. and Mallouk, Thomas E. and Zhu, J. and Terrones, Mauricio},
abstractNote = {We report that transition metal dichalcogenides (TMDs) such as WS2 show exciting promise in electronic and optoelectronic applications. Significant variations in the transport, Raman, and photoluminescence (PL) can be found in the literature, yet it is rarely addressed why this is. In this report, Raman and PL of monolayered WS2 produced via different methods are studied and distinct features that indicate the degree of crystallinity of the material are observed. While the intensity of the LA(M) Raman mode is found to be a useful indicator to assess the crystallinity, PL is drastically more sensitive to the quality of the material than Raman spectroscopy. We also show that even exfoliated crystals, which are usually regarded as the most pristine material, can contain large amounts of defects that would not be apparent without Raman and PL measurements. Ultimately, these findings can be applied to the understanding of other two-dimensional heterostructured systems.},
doi = {10.1557/jmr.2016.47},
journal = {Journal of Materials Research},
number = 07,
volume = 31,
place = {United States},
year = {Tue Mar 08 00:00:00 EST 2016},
month = {Tue Mar 08 00:00:00 EST 2016}
}
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    Chemical vapor deposition of monolayer-thin WS 2 crystals from the WF 6 and H 2 S precursors at low deposition temperature
    journal, March 2019

    • Groven, B.; Claes, D.; Nalin Mehta, A.
    • The Journal of Chemical Physics, Vol. 150, Issue 10
    • DOI: 10.1063/1.5048346

    Lithographically defined synthesis of transition metal dichalcogenides
    journal, September 2019

    Mask-free patterning and selective CVD-growth of 2D-TMDCs semiconductors
    journal, July 2019

    • Alameri, Dheyaa; Nasr, Joseph R.; Karbach, Devon
    • Semiconductor Science and Technology, Vol. 34, Issue 8
    • DOI: 10.1088/1361-6641/ab28db

    Two-Dimensional MoxW1−xS2 Graded Alloys: Growth and Optical Properties
    journal, August 2018

    Growth of WS2 flakes on Ti3C2Tx Mxene Using Vapor Transportation Routine
    journal, August 2018

    Large-area and low-temperature synthesis of few-layered WS 2 films for photodetectors
    journal, September 2018

    Light-Emitting Transition Metal Dichalcogenide Monolayers under Cellular Digestion
    journal, January 2018

    Optical identification of sulfur vacancies: Bound excitons at the edges of monolayer tungsten disulfide
    journal, April 2017

    • Carozo, Victor; Wang, Yuanxi; Fujisawa, Kazunori
    • Science Advances, Vol. 3, Issue 4
    • DOI: 10.1126/sciadv.1602813

    Electromagnetic plasmonic field of nanoparticles tune the band gap of two-dimensional semiconducting materials
    journal, January 2019

    • Obiakara, Chinedu; Mahmoud, Mahmoud A.
    • Journal of Materials Chemistry C, Vol. 7, Issue 12
    • DOI: 10.1039/c9tc00068b

    The deviations of evaporation modes in two different morphologies of 2D WS 2 film
    journal, January 2019

    Local strain-induced band gap fluctuations and exciton localization in aged WS 2 monolayers
    journal, June 2017

    • Krustok, J.; Kaupmees, R.; Jaaniso, R.
    • AIP Advances, Vol. 7, Issue 6
    • DOI: 10.1063/1.4985299
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