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Title: Polarization-dependent exciton linewidth in semiconductor quantum wells: A consequence of bosonic nature of excitons

Authors:
; ; ; ; ;
Publication Date:
Grant/Contract Number:
DE5 FG02-02ER15346
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 94 Journal Issue: 8; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1310838

Singh, Rohan, Suzuki, Takeshi, Autry, Travis M., Moody, Galan, Siemens, Mark E., and Cundiff, Steven T.. Polarization-dependent exciton linewidth in semiconductor quantum wells: A consequence of bosonic nature of excitons. United States: N. p., Web. doi:10.1103/PhysRevB.94.081304.
Singh, Rohan, Suzuki, Takeshi, Autry, Travis M., Moody, Galan, Siemens, Mark E., & Cundiff, Steven T.. Polarization-dependent exciton linewidth in semiconductor quantum wells: A consequence of bosonic nature of excitons. United States. doi:10.1103/PhysRevB.94.081304.
Singh, Rohan, Suzuki, Takeshi, Autry, Travis M., Moody, Galan, Siemens, Mark E., and Cundiff, Steven T.. 2016. "Polarization-dependent exciton linewidth in semiconductor quantum wells: A consequence of bosonic nature of excitons". United States. doi:10.1103/PhysRevB.94.081304.
@article{osti_1310838,
title = {Polarization-dependent exciton linewidth in semiconductor quantum wells: A consequence of bosonic nature of excitons},
author = {Singh, Rohan and Suzuki, Takeshi and Autry, Travis M. and Moody, Galan and Siemens, Mark E. and Cundiff, Steven T.},
abstractNote = {},
doi = {10.1103/PhysRevB.94.081304},
journal = {Physical Review B},
number = 8,
volume = 94,
place = {United States},
year = {2016},
month = {8}
}