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Title: Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe 2

Authors:
; ; ; ;
Publication Date:
Grant/Contract Number:
DESC0012635; DESC0013883
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Name: Physical Review Letters Journal Volume: 117 Journal Issue: 10; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1310836

Xi, Xiaoxiang, Berger, Helmuth, Forró, László, Shan, Jie, and Mak, Kin Fai. Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe 2. United States: N. p., Web. doi:10.1103/PhysRevLett.117.106801.
Xi, Xiaoxiang, Berger, Helmuth, Forró, László, Shan, Jie, & Mak, Kin Fai. Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe 2. United States. doi:10.1103/PhysRevLett.117.106801.
Xi, Xiaoxiang, Berger, Helmuth, Forró, László, Shan, Jie, and Mak, Kin Fai. 2016. "Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe 2". United States. doi:10.1103/PhysRevLett.117.106801.
@article{osti_1310836,
title = {Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe 2},
author = {Xi, Xiaoxiang and Berger, Helmuth and Forró, László and Shan, Jie and Mak, Kin Fai},
abstractNote = {},
doi = {10.1103/PhysRevLett.117.106801},
journal = {Physical Review Letters},
number = 10,
volume = 117,
place = {United States},
year = {2016},
month = {8}
}

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