Oxygen Displacement in Cuprates under IonicLiquid Field-Effect Gating

Dubuis, Guy; Yacoby, Yizhak; Zhou, Hua; He, Xi; Bollinger, Anthony T.; Pavuna, Davor; Pindak, Ron; Bozovic, Ivan

doi:10.1038/srep32378

Title: Oxygen Displacement in Cuprates under IonicLiquid Field-Effect Gating

Journal Article · 14 August 2016 · Scientific Reports

DOI: https://doi.org/10.1038/srep32378 · OSTI ID:1303018

Dubuis, Guy ^[1]; Yacoby, Yizhak ^[2]; Zhou, Hua ^[3]; He, Xi ^[4]; Bollinger, Anthony T. ^[5]; Pavuna, Davor ^[6]; Pindak, Ron ^[7]; Bozovic, Ivan ^[5]

Victoria Univ. of Wellington (New Zealand); Brookhaven National Lab. (BNL), Upton, NY (United States); Ecole Polytechnique Federale Lausanne (Switzlerland)
Hebrew Univ. of Jerusalem (Israel). Racah Inst. of Physics
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Yale Univ., New Haven, CT (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)
Ecole Polytechnique Federale Lausanne (Switzlerland)
Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)

We studied structural changes in a 5 unit cell thick La_1.96Sr_0.04CuO₄ film, epitaxially grown on a LaSrAlO₄ substrate with a single unit cell buffer layer, when ultra-high electric fields were induced in the film by applying a gate voltage between the film and an ionic liquid in contact with it. Measuring the diffraction intensity along the substrate-defined Bragg rods and analyzing the results using a phase retrieval method we obtained the three-dimensional electron density in the film, buffer layer, and topmost atomic layers of the substrate under different applied gate voltages. The main structural observations were: (i) there were no structural changes when the voltage was negative, holes were injected into the film making it more metallic and screening the electric field; (ii) when the voltage was positive, the film was depleted of holes becoming more insulating, the electric field extended throughout the film, the partial surface monolayer became disordered, and planar oxygen atoms were displaced towards the sample surface; (iii) the changes in surface disorder and the oxygen displacements were both reversed when a negative voltage was applied; and (iv) the c-axis lattice constant of the film did not change in spite of the displacement of planar oxygen atoms.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

OSTI ID:: 1303018

Alternate ID(s):: OSTI ID: 1335398; OSTI ID: 1345805; OSTI ID: 1354472

Report Number(s):: BNL--112502-2016-JA; KC0203020

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Vol. 6; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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In operando evidence of deoxygenation in ionic liquid gating of YBa ₂ Cu ₃ O _7-X Perez-Muñoz, Ana M.; Schio, Pedro; Poloni, Roberta Proceedings of the National Academy of Sciences, Vol. 114, Issue 2 https://doi.org/10.1073/pnas.1613006114	journal	December 2016
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