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Title: Oxygen Displacement in Cuprates under IonicLiquid Field-Effect Gating

Journal Article · · Scientific Reports
DOI: https://doi.org/10.1038/srep32378 · OSTI ID:1303018
 [1];  [2];  [3];  [4];  [5];  [6];  [7];  [5]
  1. Victoria Univ. of Wellington (New Zealand); Brookhaven National Lab. (BNL), Upton, NY (United States); Ecole Polytechnique Federale Lausanne (Switzlerland)
  2. Hebrew Univ. of Jerusalem (Israel). Racah Inst. of Physics
  3. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
  4. Yale Univ., New Haven, CT (United States)
  5. Brookhaven National Lab. (BNL), Upton, NY (United States)
  6. Ecole Polytechnique Federale Lausanne (Switzlerland)
  7. Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)

We studied structural changes in a 5 unit cell thick La1.96Sr0.04CuO4 film, epitaxially grown on a LaSrAlO4 substrate with a single unit cell buffer layer, when ultra-high electric fields were induced in the film by applying a gate voltage between the film and an ionic liquid in contact with it. Measuring the diffraction intensity along the substrate-defined Bragg rods and analyzing the results using a phase retrieval method we obtained the three-dimensional electron density in the film, buffer layer, and topmost atomic layers of the substrate under different applied gate voltages. The main structural observations were: (i) there were no structural changes when the voltage was negative, holes were injected into the film making it more metallic and screening the electric field; (ii) when the voltage was positive, the film was depleted of holes becoming more insulating, the electric field extended throughout the film, the partial surface monolayer became disordered, and planar oxygen atoms were displaced towards the sample surface; (iii) the changes in surface disorder and the oxygen displacements were both reversed when a negative voltage was applied; and (iv) the c-axis lattice constant of the film did not change in spite of the displacement of planar oxygen atoms.

Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI ID:
1303018
Alternate ID(s):
OSTI ID: 1335398; OSTI ID: 1345805; OSTI ID: 1354472
Report Number(s):
BNL--112502-2016-JA; KC0203020
Journal Information:
Scientific Reports, Journal Name: Scientific Reports Vol. 6; ISSN 2045-2322
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English

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Ion-gel-gating-induced oxygen vacancy formation in epitaxial L a 0.5 S r 0.5 Co O 3 − δ films from in operando x-ray and neutron scattering journal December 2017
In operando evidence of deoxygenation in ionic liquid gating of YBa 2 Cu 3 O 7-X journal December 2016
Electrochemical Tuning of Metal Insulator Transition and Nonvolatile Resistive Switching in Superconducting Films journal August 2018
ON the Nature of Ionic Liquid Gating of La2−xSrxCuO4 journal February 2018
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