Fabrication and characterization of a co-planar detector in diamond for low energy single ion implantation
Journal Article
·
· Applied Physics Letters
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
We demonstrate low energy single ion detection using a co-planar detector fabricated on a diamond substrate and characterized by ion beam induced charge collection. Histograms are taken with low fluence ion pulses illustrating quantized ion detection down to a single ion with a signal-to-noise ratio of approximately 10. We anticipate that this detection technique can serve as a basis to optimize the yield of single color centers in diamond. In conclusion, the ability to count ions into a diamond substrate is expected to reduce the uncertainty in the yield of color center formation by removing Poisson statistics from the implantation process.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1301988
- Alternate ID(s):
- OSTI ID: 1367120; OSTI ID: 1287754
- Report Number(s):
- SAND--2016-4671J; 640339
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 109; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Quantum Micro–Nano Devices Fabricated in Diamond by Femtosecond Laser and Ion Irradiation
|
journal | April 2019 |
Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures
|
journal | May 2017 |
Mapping the Local Spatial Charge in Defective Diamond by Means of N- V Sensors—A Self-Diagnostic Concept
|
journal | July 2018 |
Quantum nanophotonics with group IV defects in diamond
|
journal | December 2019 |
Scalable Focused Ion Beam Creation of Nearly Lifetime-Limited Single Quantum Emitters in Diamond Nanostructures | text | January 2016 |
Quantum Nanophotonics with Group IV defects in Diamond | text | January 2019 |
Similar Records
In Situ Ion Counting for Improved Implanted Ion Error Rate and Silicon Vacancy Yield Uncertainty
Optimization of SiV Defect Yield in Diamond Substrates
In situ optimization of co-implantation and substrate temperature conditions for Nv-center formation in single crystal diamonds
Journal Article
·
2022
· Nano Letters
·
OSTI ID:1871967
+4 more
Optimization of SiV Defect Yield in Diamond Substrates
Technical Report
·
2019
·
OSTI ID:1562424
In situ optimization of co-implantation and substrate temperature conditions for Nv-center formation in single crystal diamonds
Journal Article
·
2011
· New Journal of Physics, NJP
·
OSTI ID:1052170
+1 more