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Title: Fabrication and characterization of a co-planar detector in diamond for low energy single ion implantation

Journal Article · · Applied Physics Letters
DOI: https://doi.org/10.1063/1.4960968 · OSTI ID:1301988

We demonstrate low energy single ion detection using a co-planar detector fabricated on a diamond substrate and characterized by ion beam induced charge collection. Histograms are taken with low fluence ion pulses illustrating quantized ion detection down to a single ion with a signal-to-noise ratio of approximately 10. We anticipate that this detection technique can serve as a basis to optimize the yield of single color centers in diamond. In conclusion, the ability to count ions into a diamond substrate is expected to reduce the uncertainty in the yield of color center formation by removing Poisson statistics from the implantation process.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1301988
Alternate ID(s):
OSTI ID: 1367120; OSTI ID: 1287754
Report Number(s):
SAND--2016-4671J; 640339
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 109; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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Quantum nanophotonics with group IV defects in diamond journal December 2019
Scalable Focused Ion Beam Creation of Nearly Lifetime-Limited Single Quantum Emitters in Diamond Nanostructures text January 2016
Quantum Nanophotonics with Group IV defects in Diamond text January 2019