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Title: Orientation epitaxy of Ge 1–xSn x films grown on single crystal CaF 2 substrates

Abstract

Ge 1–xSn x films were grown via physical vapor deposition below the crystallization temperature of Ge on single crystal (111) and (100) CaF 2 substrates to assess the role of Sn alloying in Ge crystallization. By studying samples grown at several growth temperatures ranging from 250 °C to 400 °C we report temperature-dependent trends in several of the films' properties. X-ray diffraction theta vs. two-theta (θ/2θ) scans indicate single orientation Ge 1–xSn x(111) films are grown on CaF 2(111) substrates at each temperature, while a temperature-dependent superposition of (111) and (100) orientations are exhibited in films grown on CaF2(100) above 250 °C. This is the first report of (111) oriented Ge 1–xSn x grown on a (100) oriented CaF 2 substrate, which is successfully predicted by a superlattice area matching model. These results are confirmed by X-ray diffraction pole figure analysis. θ/2θ results indicate substitutional Sn alloying in each film of about 5%, corroborated by energy dispersive spectroscopy. In addition, morphological and electrical properties are measured by scanning electron microscopy, atomic force microscopy and Hall mobility measurements and are also shown to be dependent upon growth temperature.

Authors:
;  [1];  [2];  [1];  [2]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Rensselaer Polytechnic Inst., Troy, NY (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1295206
Report Number(s):
BNL-112305-2016-JA
Journal ID: ISSN 1466-8033; CRECF4; R&D Project: 16060; KC0403020
Grant/Contract Number:  
SC00112704
Resource Type:
Accepted Manuscript
Journal Name:
CrystEngComm
Additional Journal Information:
Journal Volume: 18; Journal Issue: 15; Journal ID: ISSN 1466-8033
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Ge1-xSnx films; orientation epitaxy; X-ray diffraction; TEM and EDS; Center for Functional Nanomaterials

Citation Formats

A. J. Littlejohn, Zhang, L. H., Lu, T. -M., Kisslinger, K., and and Wang, G. -C. Orientation epitaxy of Ge1–xSnx films grown on single crystal CaF2 substrates. United States: N. p., 2016. Web. doi:10.1039/C5CE02579F.
A. J. Littlejohn, Zhang, L. H., Lu, T. -M., Kisslinger, K., & and Wang, G. -C. Orientation epitaxy of Ge1–xSnx films grown on single crystal CaF2 substrates. United States. doi:10.1039/C5CE02579F.
A. J. Littlejohn, Zhang, L. H., Lu, T. -M., Kisslinger, K., and and Wang, G. -C. Tue . "Orientation epitaxy of Ge1–xSnx films grown on single crystal CaF2 substrates". United States. doi:10.1039/C5CE02579F. https://www.osti.gov/servlets/purl/1295206.
@article{osti_1295206,
title = {Orientation epitaxy of Ge1–xSnx films grown on single crystal CaF2 substrates},
author = {A. J. Littlejohn and Zhang, L. H. and Lu, T. -M. and Kisslinger, K. and and Wang, G. -C.},
abstractNote = {Ge1–xSnx films were grown via physical vapor deposition below the crystallization temperature of Ge on single crystal (111) and (100) CaF2 substrates to assess the role of Sn alloying in Ge crystallization. By studying samples grown at several growth temperatures ranging from 250 °C to 400 °C we report temperature-dependent trends in several of the films' properties. X-ray diffraction theta vs. two-theta (θ/2θ) scans indicate single orientation Ge1–xSnx(111) films are grown on CaF2(111) substrates at each temperature, while a temperature-dependent superposition of (111) and (100) orientations are exhibited in films grown on CaF2(100) above 250 °C. This is the first report of (111) oriented Ge1–xSnx grown on a (100) oriented CaF2 substrate, which is successfully predicted by a superlattice area matching model. These results are confirmed by X-ray diffraction pole figure analysis. θ/2θ results indicate substitutional Sn alloying in each film of about 5%, corroborated by energy dispersive spectroscopy. In addition, morphological and electrical properties are measured by scanning electron microscopy, atomic force microscopy and Hall mobility measurements and are also shown to be dependent upon growth temperature.},
doi = {10.1039/C5CE02579F},
journal = {CrystEngComm},
number = 15,
volume = 18,
place = {United States},
year = {2016},
month = {3}
}

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