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Title: High voltage and high current density vertical GaN power diodes

We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm 2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm 2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Lehigh Univ., Bethlehem, PA (United States)
Publication Date:
Report Number(s):
SAND-2016-7478J
Journal ID: ISSN 0013-5194; 646341
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Electronics Letters
Additional Journal Information:
Journal Volume: 52; Journal Issue: 13; Journal ID: ISSN 0013-5194
Publisher:
Institution of Engineering and Technology (IET)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 30 DIRECT ENERGY CONVERSION
OSTI Identifier:
1289617

Fischer, A. J., Dickerson, J. R., Armstrong, A. M., Moseley, M. W., Crawford, M. H., King, M. P., Allerman, A. A., Kaplar, R. J., van Heukelom, M. S., and Wierer, J. J.. High voltage and high current density vertical GaN power diodes. United States: N. p., Web. doi:10.1049/el.2016.1156.
Fischer, A. J., Dickerson, J. R., Armstrong, A. M., Moseley, M. W., Crawford, M. H., King, M. P., Allerman, A. A., Kaplar, R. J., van Heukelom, M. S., & Wierer, J. J.. High voltage and high current density vertical GaN power diodes. United States. doi:10.1049/el.2016.1156.
Fischer, A. J., Dickerson, J. R., Armstrong, A. M., Moseley, M. W., Crawford, M. H., King, M. P., Allerman, A. A., Kaplar, R. J., van Heukelom, M. S., and Wierer, J. J.. 2016. "High voltage and high current density vertical GaN power diodes". United States. doi:10.1049/el.2016.1156. https://www.osti.gov/servlets/purl/1289617.
@article{osti_1289617,
title = {High voltage and high current density vertical GaN power diodes},
author = {Fischer, A. J. and Dickerson, J. R. and Armstrong, A. M. and Moseley, M. W. and Crawford, M. H. and King, M. P. and Allerman, A. A. and Kaplar, R. J. and van Heukelom, M. S. and Wierer, J. J.},
abstractNote = {We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.},
doi = {10.1049/el.2016.1156},
journal = {Electronics Letters},
number = 13,
volume = 52,
place = {United States},
year = {2016},
month = {1}
}