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Title: High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes

Here, we present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10–12, in the range from –18.3 dBm to –12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
SAND-2016-8357J
Journal ID: ISSN 1094-4087; OPEXFF; 647399
Grant/Contract Number:
AC04-94AL85000
Type:
Published Article
Journal Name:
Optics Express
Additional Journal Information:
Journal Volume: 24; Journal Issue: 17; Journal ID: ISSN 1094-4087
Publisher:
Optical Society of America (OSA)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 47 OTHER INSTRUMENTATION; integrated optics; integrated optics devices; detectors; photodiodes
OSTI Identifier:
1287760
Alternate Identifier(s):
OSTI ID: 1326061