Title: An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe

Journal Article · · Scripta Materialia
ORCiD logo [1];  [2];  [3];  [3];  [3];  [3];  [3]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. Univ.of Sheffield (United Kingdom)
  3. Univ. of Huddersfield (United Kingdom)
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We used transmission electron microscopy with in situ ion irradiation to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. Moreover, for the differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1286947
Journal Information:
Scripta Materialia, Journal Name: Scripta Materialia Journal Issue: C Vol. 113; ISSN 1359-6462
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

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Cited By (2)

Shape Modification of Germanium Nanowires during Ion Irradiation and Subsequent Solid-Phase Epitaxial Growth journal May 2018
Ion-beam-induced bending of semiconductor nanowires journal June 2018

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