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Title: An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe

Abstract

We used transmission electron microscopy with in situ ion irradiation to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. Moreover, for the differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms.

Authors:
ORCiD logo [1];  [2];  [3];  [3];  [3];  [3];  [3]
+ Show Author Affiliations
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. Univ.of Sheffield (United Kingdom)
  3. Univ. of Huddersfield (United Kingdom)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1286947
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Scripta Materialia
Additional Journal Information:
Journal Volume: 113; Journal Issue: C; Journal ID: ISSN 1359-6462
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Edmondson, P. D., Abrams, K. J., Hinks, J. A., Greaves, G., Pawley, C. J., Hanif, I., and Donnelly, S. E. An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe. United States: N. p., 2015. Web. doi:10.1016/j.scriptamat.2015.11.010.
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Edmondson, P. D., Abrams, K. J., Hinks, J. A., Greaves, G., Pawley, C. J., Hanif, I., & Donnelly, S. E. An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe. United States. https://doi.org/10.1016/j.scriptamat.2015.11.010
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Edmondson, P. D., Abrams, K. J., Hinks, J. A., Greaves, G., Pawley, C. J., Hanif, I., and Donnelly, S. E. Sat . "An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe". United States. https://doi.org/10.1016/j.scriptamat.2015.11.010. https://www.osti.gov/servlets/purl/1286947.
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@article{osti_1286947,
title = {An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe},
author = {Edmondson, P. D. and Abrams, K. J. and Hinks, J. A. and Greaves, G. and Pawley, C. J. and Hanif, I. and Donnelly, S. E.},
abstractNote = {We used transmission electron microscopy with in situ ion irradiation to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. Moreover, for the differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms.},
doi = {10.1016/j.scriptamat.2015.11.010},
journal = {Scripta Materialia},
number = C,
volume = 113,
place = {United States},
year = {Sat Nov 21 00:00:00 EST 2015},
month = {Sat Nov 21 00:00:00 EST 2015}
}
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Publisher's Version of Record
https://doi.org/10.1016/j.scriptamat.2015.11.010
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Works referenced in this record:

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    Works referencing / citing this record:

    Ion-beam-induced bending of semiconductor nanowires
    journal, June 2018

    Shape Modification of Germanium Nanowires during Ion Irradiation and Subsequent Solid-Phase Epitaxial Growth
    journal, May 2018

    • Camara, Osmane; Hanif, Imran; Tunes, Matheus
    • Advanced Materials Interfaces, Vol. 5, Issue 13
    • DOI: 10.1002/admi.201800276
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