Composition dependence of electronic, magnetic, transport and morphological properties of mixed valence manganite thin films

doi:10.1038/srep29632

Title: Composition dependence of electronic, magnetic, transport and morphological properties of mixed valence manganite thin films

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Abstract

Mixed-valence manganese oxides present striking properties like the colossal magnetoresistance, metal-insulator transition (MIT) that may result from coexistence of ferromagnetic, metallic and insulating phases. Percolation of such phase coexistence in the vicinity of MIT leads to first-order transition in these manganites. However the length scales over which the electronic and magnetic phases are separated across MIT which appears compelling for bulk systems has been elusive in (La_1-yPr_y)_1-xCaxMnO₃ films. Here we show the in-plane length scale over which charge and magnetism are correlated in (La_0.4Pr_0.6)_1-xCaxMnO3 films with x = 0.33 and 0.375, across the MIT temperature. We combine electrical transport (resistance) measurements, x-ray absorption spectroscopy (XAS), x-ray magnetic circular dichroism (XMCD), and specular/off-specular x-ray resonant magnetic scattering (XRMS) measurements as a function of temperature to elucidate relationships between electronic, magnetic and morphological structure of the thin films. Using off-specular XRMS we obtained the charge-charge and charge-magnetic correlation length of these LPCMO films across the MIT. We observed different charge-magnetic correlation length for two films which increases below the MIT. The different correlation length shown by two films may be responsible for different macroscopic (transport and magnetic) properties.

Authors:

Singh, Surendra ^[1]; Freeland, J. W. ^[2]; Fitzsimmons, Michael R. ^[3]; Jeen, H. ^[4]; Biswas, A. ^[5]

Bhabha Atomic Research Centre (BARC), Mumbai (India)
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Univ. of Florida, Gainesville, FL (United States); Pusan National Univ., Busan (Korea, Republic of)
Univ. of Florida, Gainesville, FL (United States)

Publication Date:: 2016-07-27

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE Laboratory Directed Research and Development (LDRD) Program; National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division

OSTI Identifier:: 1286933

Alternate Identifier(s):: OSTI ID: 1326847

Grant/Contract Number:: AC05-00OR22725; AC02-06CH11357

Resource Type:: Accepted Manuscript

Journal Name:: Scientific Reports

Additional Journal Information:: Journal Volume: 6; Journal ID: ISSN 2045-2322

Publisher:: Nature Publishing Group

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats


                    Singh, Surendra, Freeland, J. W., Fitzsimmons, Michael R., Jeen, H., and Biswas, A. Composition dependence of electronic, magnetic, transport and morphological properties of mixed valence manganite thin films.  United States: N. p., 2016. 
        Web.  doi:10.1038/srep29632.

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                    Singh, Surendra, Freeland, J. W., Fitzsimmons, Michael R., Jeen, H., & Biswas, A. Composition dependence of electronic, magnetic, transport and morphological properties of mixed valence manganite thin films.  United States.  doi:10.1038/srep29632.

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                    Singh, Surendra, Freeland, J. W., Fitzsimmons, Michael R., Jeen, H., and Biswas, A. Wed .  
        "Composition dependence of electronic, magnetic, transport and morphological properties of mixed valence manganite thin films".  United States.  doi:10.1038/srep29632.  https://www.osti.gov/servlets/purl/1286933.

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@article{osti_1286933,

  title        = {Composition dependence of electronic, magnetic, transport and morphological properties of mixed valence manganite thin films},

  author       = {Singh, Surendra and Freeland, J. W. and Fitzsimmons, Michael R. and Jeen, H. and Biswas, A.},

  abstractNote = {Mixed-valence manganese oxides present striking properties like the colossal magnetoresistance, metal-insulator transition (MIT) that may result from coexistence of ferromagnetic, metallic and insulating phases. Percolation of such phase coexistence in the vicinity of MIT leads to first-order transition in these manganites. However the length scales over which the electronic and magnetic phases are separated across MIT which appears compelling for bulk systems has been elusive in (La1-yPry)1-xCaxMnO3 films. Here we show the in-plane length scale over which charge and magnetism are correlated in (La0.4Pr0.6)1-xCaxMnO3 films with x = 0.33 and 0.375, across the MIT temperature. We combine electrical transport (resistance) measurements, x-ray absorption spectroscopy (XAS), x-ray magnetic circular dichroism (XMCD), and specular/off-specular x-ray resonant magnetic scattering (XRMS) measurements as a function of temperature to elucidate relationships between electronic, magnetic and morphological structure of the thin films. Using off-specular XRMS we obtained the charge-charge and charge-magnetic correlation length of these LPCMO films across the MIT. We observed different charge-magnetic correlation length for two films which increases below the MIT. The different correlation length shown by two films may be responsible for different macroscopic (transport and magnetic) properties.},

  doi          = {10.1038/srep29632},

  journal      = {Scientific Reports},

  number       = ,

  volume       = 6,

  place        = {United States},

  year         = {2016},

  month        = {7}

}

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