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Title: Strain and structure heterogeneity in MoS 2 atomic layers grown by chemical vapour deposition

Abstract

Monolayer molybdenum disulfide (MoS 2) has attracted tremendous attention due to its promising applications in high-performance field-effect transistors, phototransistors, spintronic devices, and nonlinear optics. The enhanced photoluminescence effect in monolayer MoS 2 was discovered and, as a strong tool, was employed for strain and defect analysis in MoS 2. Recently, large-size monolayer MoS 2 has been produced by chemical vapor deposition but has not yet been fully explored. Here we systematically characterize chemical vapor deposition grown MoS 2 by PL spectroscopy and mapping, and demonstrate non-uniform strain in single-crystalline monolayer MoS 2 and strain-induced band gap engineering. We also evaluate the effective strain transferred from polymer substrates to MoS 2 by three-dimensional finite element analysis. In addition, our work demonstrates that PL mapping can be used as a non-contact approach for quick identification of grain boundaries in MoS 2.

Authors:
 [1];  [2];  [3];  [4];  [3];  [5];  [1];  [1];  [2];  [2];  [3];  [3];  [6];  [2];  [3];  [3]
  1. Nanyang Technological Univ. (Singapore)
  2. US Army Research Lab., Adelphi, MD (United States)
  3. Rice Univ., Houston, TX (United States)
  4. Univ. of North Texas, Denton, TX (United States); China Univ. of Petroleum, Beijing (China)
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
  6. Univ. of North Texas, Denton, TX (United States)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1286749
Grant/Contract Number:  
AC05-00OR22725; S201006; CNS-0821727; OCI-0959097; NRF-RF2013-08
Resource Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 5; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Monolayer ​molybdenum disulfide; (​MoS2); chemical vapour deposition; photoluminescence mapping

Citation Formats

Liu, Zheng, Amani, Matin, Najmaei, Sina, Xu, Quan, Zou, Xiaolong, Zhou, Wu, Yu, Ting, Qiu, Caiyu, Birdwell, A. Glen, Crowne, Frank J., Vajtai, Robert, Yakobson, Boris I., Xia, Zhenhai, Dubey, Madan, Ajayan, Pulickel M., and Lou, Jun. Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition. United States: N. p., 2014. Web. doi:10.1038/ncomms6246.
Liu, Zheng, Amani, Matin, Najmaei, Sina, Xu, Quan, Zou, Xiaolong, Zhou, Wu, Yu, Ting, Qiu, Caiyu, Birdwell, A. Glen, Crowne, Frank J., Vajtai, Robert, Yakobson, Boris I., Xia, Zhenhai, Dubey, Madan, Ajayan, Pulickel M., & Lou, Jun. Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition. United States. doi:10.1038/ncomms6246.
Liu, Zheng, Amani, Matin, Najmaei, Sina, Xu, Quan, Zou, Xiaolong, Zhou, Wu, Yu, Ting, Qiu, Caiyu, Birdwell, A. Glen, Crowne, Frank J., Vajtai, Robert, Yakobson, Boris I., Xia, Zhenhai, Dubey, Madan, Ajayan, Pulickel M., and Lou, Jun. Tue . "Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition". United States. doi:10.1038/ncomms6246. https://www.osti.gov/servlets/purl/1286749.
@article{osti_1286749,
title = {Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition},
author = {Liu, Zheng and Amani, Matin and Najmaei, Sina and Xu, Quan and Zou, Xiaolong and Zhou, Wu and Yu, Ting and Qiu, Caiyu and Birdwell, A. Glen and Crowne, Frank J. and Vajtai, Robert and Yakobson, Boris I. and Xia, Zhenhai and Dubey, Madan and Ajayan, Pulickel M. and Lou, Jun},
abstractNote = {Monolayer molybdenum disulfide (MoS2) has attracted tremendous attention due to its promising applications in high-performance field-effect transistors, phototransistors, spintronic devices, and nonlinear optics. The enhanced photoluminescence effect in monolayer MoS2 was discovered and, as a strong tool, was employed for strain and defect analysis in MoS2. Recently, large-size monolayer MoS2 has been produced by chemical vapor deposition but has not yet been fully explored. Here we systematically characterize chemical vapor deposition grown MoS2 by PL spectroscopy and mapping, and demonstrate non-uniform strain in single-crystalline monolayer MoS2 and strain-induced band gap engineering. We also evaluate the effective strain transferred from polymer substrates to MoS2 by three-dimensional finite element analysis. In addition, our work demonstrates that PL mapping can be used as a non-contact approach for quick identification of grain boundaries in MoS2.},
doi = {10.1038/ncomms6246},
journal = {Nature Communications},
number = ,
volume = 5,
place = {United States},
year = {2014},
month = {11}
}

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