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Title: Al00.3Ga0.7N PN diode with breakdown voltage >1600 V

Abstract

Demonstration of Al00.3Ga0.7N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal-organic vapour-phase epitaxy on 1.3-mm-thick sapphire in order to achieve crack-free structures. A junction termination edge structure was employed to control the lateral electric fields. A current density of 3.5 kA/cm2 was achieved under DC forward bias and a reverse leakage current <3 nA was measured for voltages <1200 V. The differential on-resistance of 16 mΩ cm2 is limited by the lateral conductivity of the n-type contact layer required by the front-surface contact geometry of the device. An effective critical electric field of 5.9 MV/cm was determined from the epilayer properties and the reverse current–voltage characteristics. To our knowledge, this is the first aluminium gallium nitride (AlGaN)-based PN diode exhibiting a breakdown voltage in excess of 1 kV. Finally, we note that a Baliga figure of merit (Vbr2/Rspec,on) of 150 MW/cm2 found is the highest reported for an AlGaN PN diode and illustrates the potential of larger-bandgap AlGaN alloys for high-voltage devices.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [2];  [1]
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  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Lehigh Univ., Bethlehem, PA (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1285958
Report Number(s):
SAND2016-7284J
Journal ID: ISSN 0013-5194; 646208
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Electronics Letters
Additional Journal Information:
Journal Volume: 52; Journal Issue: 15; Journal ID: ISSN 0013-5194
Publisher:
Institution of Engineering and Technology (IET)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Allerman, A. A., Armstrong, A. M., Fischer, A. J., Dickerson, J. R., Crawford, M. H., King, M. P., Moseley, M. W., Wierer, J. J., and Kaplar, R. J. Al00.3Ga0.7N PN diode with breakdown voltage >1600 V. United States: N. p., 2016. Web. doi:10.1049/el.2016.1280.
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Allerman, A. A., Armstrong, A. M., Fischer, A. J., Dickerson, J. R., Crawford, M. H., King, M. P., Moseley, M. W., Wierer, J. J., & Kaplar, R. J. Al00.3Ga0.7N PN diode with breakdown voltage >1600 V. United States. https://doi.org/10.1049/el.2016.1280
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Allerman, A. A., Armstrong, A. M., Fischer, A. J., Dickerson, J. R., Crawford, M. H., King, M. P., Moseley, M. W., Wierer, J. J., and Kaplar, R. J. Thu . "Al00.3Ga0.7N PN diode with breakdown voltage >1600 V". United States. https://doi.org/10.1049/el.2016.1280. https://www.osti.gov/servlets/purl/1285958.
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@article{osti_1285958,
title = {Al00.3Ga0.7N PN diode with breakdown voltage >1600 V},
author = {Allerman, A. A. and Armstrong, A. M. and Fischer, A. J. and Dickerson, J. R. and Crawford, M. H. and King, M. P. and Moseley, M. W. and Wierer, J. J. and Kaplar, R. J.},
abstractNote = {Demonstration of Al00.3Ga0.7N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal-organic vapour-phase epitaxy on 1.3-mm-thick sapphire in order to achieve crack-free structures. A junction termination edge structure was employed to control the lateral electric fields. A current density of 3.5 kA/cm2 was achieved under DC forward bias and a reverse leakage current <3 nA was measured for voltages <1200 V. The differential on-resistance of 16 mΩ cm2 is limited by the lateral conductivity of the n-type contact layer required by the front-surface contact geometry of the device. An effective critical electric field of 5.9 MV/cm was determined from the epilayer properties and the reverse current–voltage characteristics. To our knowledge, this is the first aluminium gallium nitride (AlGaN)-based PN diode exhibiting a breakdown voltage in excess of 1 kV. Finally, we note that a Baliga figure of merit (Vbr2/Rspec,on) of 150 MW/cm2 found is the highest reported for an AlGaN PN diode and illustrates the potential of larger-bandgap AlGaN alloys for high-voltage devices.},
doi = {10.1049/el.2016.1280},
journal = {Electronics Letters},
number = 15,
volume = 52,
place = {United States},
year = {Thu Jul 21 00:00:00 EDT 2016},
month = {Thu Jul 21 00:00:00 EDT 2016}
}
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Publisher's Version of Record
https://doi.org/10.1049/el.2016.1280
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Works referenced in this record:

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A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN
journal, October 2015

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Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al 0.7 Ga 0.3 N
journal, May 2015

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  • Journal of Applied Physics, Vol. 117, Issue 18
  • DOI: 10.1063/1.4920926
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    Works referencing / citing this record:

    BaTiO 3 /Al 0.58 Ga 0.42 N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm
    journal, January 2020

    • Razzak, Towhidur; Chandrasekar, Hareesh; Hussain, Kamal
    • Applied Physics Letters, Vol. 116, Issue 2
    • DOI: 10.1063/1.5130590
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