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Title: Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films

Sputter deposited amorphous Ge thin films had their nanostructure altered by irradiation with high-energy Ar + ions. The change in the structure resulted in a reduction in medium range order (MRO) characterized using fluctuation electron microscopy. The pulsed laser crystallization kinetics of the as-deposited versus irradiated materials were investigated using the dynamic transmission electron microscope operated in the multi-frame movie mode. In conclusion, the propagation rate of the crystallization front for the irradiated material was lower; the changes were correlated to the MRO difference and formation of a thin liquid layer during crystallization.
Authors:
 [1] ;  [1] ;  [1] ;  [2] ;  [1] ;  [1]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  2. Oregon State Univ., Corvallis, OR (United States)
Publication Date:
Report Number(s):
LLNL-JRNL-689356
Journal ID: ISSN 0003-6951
Grant/Contract Number:
AC52-07NA27344; AC02-05CH11231
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 22; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Lawrence Livermore National Lab., Livermore, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; crystallization; liquid crystal layers; amorphous semiconductors; crystal growth; thin film growth
OSTI Identifier:
1281671
Alternate Identifier(s):
OSTI ID: 1255463

Li, T. T., Bayu Aji, L. B., Heo, T. W., Santala, M. K., Kucheyev, S. O., and Campbell, G. H.. Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films. United States: N. p., Web. doi:10.1063/1.4953153.
Li, T. T., Bayu Aji, L. B., Heo, T. W., Santala, M. K., Kucheyev, S. O., & Campbell, G. H.. Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films. United States. doi:10.1063/1.4953153.
Li, T. T., Bayu Aji, L. B., Heo, T. W., Santala, M. K., Kucheyev, S. O., and Campbell, G. H.. 2016. "Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films". United States. doi:10.1063/1.4953153. https://www.osti.gov/servlets/purl/1281671.
@article{osti_1281671,
title = {Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films},
author = {Li, T. T. and Bayu Aji, L. B. and Heo, T. W. and Santala, M. K. and Kucheyev, S. O. and Campbell, G. H.},
abstractNote = {Sputter deposited amorphous Ge thin films had their nanostructure altered by irradiation with high-energy Ar+ ions. The change in the structure resulted in a reduction in medium range order (MRO) characterized using fluctuation electron microscopy. The pulsed laser crystallization kinetics of the as-deposited versus irradiated materials were investigated using the dynamic transmission electron microscope operated in the multi-frame movie mode. In conclusion, the propagation rate of the crystallization front for the irradiated material was lower; the changes were correlated to the MRO difference and formation of a thin liquid layer during crystallization.},
doi = {10.1063/1.4953153},
journal = {Applied Physics Letters},
number = 22,
volume = 108,
place = {United States},
year = {2016},
month = {6}
}