skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films

Abstract

Sputter deposited amorphous Ge thin films had their nanostructure altered by irradiation with high-energy Ar+ ions. The change in the structure resulted in a reduction in medium range order (MRO) characterized using fluctuation electron microscopy. The pulsed laser crystallization kinetics of the as-deposited versus irradiated materials were investigated using the dynamic transmission electron microscope operated in the multi-frame movie mode. In conclusion, the propagation rate of the crystallization front for the irradiated material was lower; the changes were correlated to the MRO difference and formation of a thin liquid layer during crystallization.

Authors:
 [1];  [1];  [1];  [2];  [1];  [1]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  2. Oregon State Univ., Corvallis, OR (United States)
Publication Date:
Research Org.:
Lawrence Livermore National Lab., Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1281671
Alternate Identifier(s):
OSTI ID: 1255463
Report Number(s):
LLNL-JRNL-689356
Journal ID: ISSN 0003-6951
Grant/Contract Number:  
AC52-07NA27344; AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 22; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; crystallization; liquid crystal layers; amorphous semiconductors; crystal growth; thin film growth

Citation Formats

Li, T. T., Bayu Aji, L. B., Heo, T. W., Santala, M. K., Kucheyev, S. O., and Campbell, G. H. Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films. United States: N. p., 2016. Web. doi:10.1063/1.4953153.
Li, T. T., Bayu Aji, L. B., Heo, T. W., Santala, M. K., Kucheyev, S. O., & Campbell, G. H. Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films. United States. doi:10.1063/1.4953153.
Li, T. T., Bayu Aji, L. B., Heo, T. W., Santala, M. K., Kucheyev, S. O., and Campbell, G. H. Fri . "Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films". United States. doi:10.1063/1.4953153. https://www.osti.gov/servlets/purl/1281671.
@article{osti_1281671,
title = {Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films},
author = {Li, T. T. and Bayu Aji, L. B. and Heo, T. W. and Santala, M. K. and Kucheyev, S. O. and Campbell, G. H.},
abstractNote = {Sputter deposited amorphous Ge thin films had their nanostructure altered by irradiation with high-energy Ar+ ions. The change in the structure resulted in a reduction in medium range order (MRO) characterized using fluctuation electron microscopy. The pulsed laser crystallization kinetics of the as-deposited versus irradiated materials were investigated using the dynamic transmission electron microscope operated in the multi-frame movie mode. In conclusion, the propagation rate of the crystallization front for the irradiated material was lower; the changes were correlated to the MRO difference and formation of a thin liquid layer during crystallization.},
doi = {10.1063/1.4953153},
journal = {Applied Physics Letters},
number = 22,
volume = 108,
place = {United States},
year = {2016},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 3 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation
journal, March 1985

  • Donovan, E. P.; Spaepen, F.; Turnbull, D.
  • Journal of Applied Physics, Vol. 57, Issue 6
  • DOI: 10.1063/1.334406

Structural relaxation and defect annihilation in pure amorphous silicon
journal, August 1991


Unexpected short- and medium-range atomic structure of sputtered amorphous silicon upon thermal annealing
journal, November 2011

  • Haberl, B.; Bogle, S. N.; Li, T.
  • Journal of Applied Physics, Vol. 110, Issue 9
  • DOI: 10.1063/1.3658628

In situ investigation of explosive crystallization in a-Ge: Experimental determination of the interface response function using dynamic transmission electron microscopy
journal, September 2014

  • Nikolova, Liliya; Stern, Mark J.; MacLeod, Jennifer M.
  • Journal of Applied Physics, Vol. 116, Issue 9
  • DOI: 10.1063/1.4894397

In situ laser crystallization of amorphous silicon: Controlled nanosecond studies in the dynamic transmission electron microscope
journal, July 2010

  • Taheri, M. L.; McGowan, S.; Nikolova, L.
  • Applied Physics Letters, Vol. 97, Issue 3
  • DOI: 10.1063/1.3422473

Luminescent nanostructures based on Ge nanoparticles embedded in an oxide matrix
journal, March 2005


Nanocrystallization of amorphous germanium films observed with nanosecond temporal resolution
journal, November 2010

  • Nikolova, L.; LaGrange, T.; Reed, B. W.
  • Applied Physics Letters, Vol. 97, Issue 20
  • DOI: 10.1063/1.3518069

Complex crystallization dynamics in amorphous germanium observed with dynamic transmission electron microscopy
journal, February 2013


Kinetics of liquid-mediated crystallization of amorphous Ge from multi-frame dynamic transmission electron microscopy
journal, December 2015

  • Santala, M. K.; Raoux, S.; Campbell, G. H.
  • Applied Physics Letters, Vol. 107, Issue 25
  • DOI: 10.1063/1.4938751

Evolution of subcritical nuclei in nitrogen-alloyed Ge 2 Sb 2 Te 5
journal, December 2012

  • Darmawikarta, Kristof; Raoux, Simone; Tchoulfian, Pierre
  • Journal of Applied Physics, Vol. 112, Issue 12
  • DOI: 10.1063/1.4770385

Observation of the Role of Subcritical Nuclei in Crystallization of a Glassy Solid
journal, November 2009


Preferred orientation of nanoscale order at the surface of amorphous Ge 2 Sb 2 Te 5 films
journal, November 2013

  • Tony Li, Tian; Hoon Lee, Tae; Elliott, Stephen R.
  • Applied Physics Letters, Vol. 103, Issue 20
  • DOI: 10.1063/1.4831973

The Local Structure of Amorphous Silicon
journal, February 2012


Observations of structural order in ion-implanted amorphous silicon
journal, November 2001

  • Cheng, Ju-Yin; Gibson, J. M.; Jacobson, D. C.
  • Journal of Materials Research, Vol. 16, Issue 11
  • DOI: 10.1557/JMR.2001.0416

Kinetics of motion of crystal-melt interfaces
conference, January 1979

  • Spaepen, F.; Turnbull, D.
  • AIP Conference Proceedings Vol. 50
  • DOI: 10.1063/1.31738

Explosive crystallization in the presence of melting
journal, May 2006


Time resolved electron microscopy for in situ experiments
journal, December 2014

  • Campbell, Geoffrey H.; McKeown, Joseph T.; Santala, Melissa K.
  • Applied Physics Reviews, Vol. 1, Issue 4
  • DOI: 10.1063/1.4900509

Approaches for ultrafast imaging of transient materials processes in the transmission electron microscope
journal, November 2012


SRIM – The stopping and range of ions in matter (2010)
journal, June 2010

  • Ziegler, James F.; Ziegler, M. D.; Biersack, J. P.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 11-12
  • DOI: 10.1016/j.nimb.2010.02.091

Fluctuation microscopy: a probe of medium range order
journal, October 2005


Quantitative Fluctuation Electron Microscopy in the STEM: Methods to Identify, Avoid, and Correct for Artifacts
journal, July 2014

  • Li, Tian T.; Bogle, Stephanie N.; Abelson, John R.
  • Microscopy and Microanalysis, Vol. 20, Issue 5
  • DOI: 10.1017/S1431927614012756

Quantifying nanoscale order in amorphous materials: simulating fluctuation electron microscopy of amorphous silicon
journal, October 2007


Evidence from atomistic simulations of fluctuation electron microscopyfor preferred local orientations in amorphous silicon
journal, August 2004

  • Khare, S. V.; Nakhmanson, S. M.; Voyles, P. M.
  • Applied Physics Letters, Vol. 85, Issue 5
  • DOI: 10.1063/1.1776614

Nanosecond-exposure electron microscopy of laser-induced phase transformations
journal, January 1987


Phase-Field Models for Microstructure Evolution
journal, August 2002


Phase-field models in materials science
journal, July 2009


    Works referencing / citing this record:

    Si-integrated ultrathin films of phase-pure Y 3 Fe 5 O 12 (YIG) via novel two-step rapid thermal anneal
    journal, March 2017