High temperature Hall measurement setup for thin film characterization

Adnane, L.; Gokirmak, A.; Silva, H.

doi:10.1063/1.4959222

Title: High temperature Hall measurement setup for thin film characterization

Authors:

^[1]; Gokirmak, A. ^[1];

^[1]

Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut 06269, USA

Publication Date:: Tue Jul 26 00:00:00 EDT 2016

Sponsoring Org.:: USDOE

OSTI Identifier:: 1272653

Grant/Contract Number:: FG02-10ER46774; SC0005038

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Review of Scientific Instruments

Additional Journal Information:: Journal Name: Review of Scientific Instruments Journal Volume: 87 Journal Issue: 7; Journal ID: ISSN 0034-6748

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

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                    Adnane, L., Gokirmak, A., and Silva, H. High temperature Hall measurement setup for thin film characterization.  United States: N. p., 2016. 
Web.  doi:10.1063/1.4959222.

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                    Adnane, L., Gokirmak, A., & Silva, H. High temperature Hall measurement setup for thin film characterization.  United States.  https://doi.org/10.1063/1.4959222

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                    Adnane, L., Gokirmak, A., and Silva, H. Tue .  
"High temperature Hall measurement setup for thin film characterization".  United States.  https://doi.org/10.1063/1.4959222.

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@article{osti_1272653,

  title        = {High temperature Hall measurement setup for thin film characterization},

  author       = {Adnane, L. and Gokirmak, A. and Silva, H.},

  abstractNote = {},

  doi          = {10.1063/1.4959222},

  journal      = {Review of Scientific Instruments},

  number       = 7,

  volume       = 87,

  place        = {United States},

  year         = {Tue Jul 26 00:00:00 EDT 2016},

  month        = {Tue Jul 26 00:00:00 EDT 2016}

}

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Cited by: 11 works

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Works referenced in this record:

Hall effect measurement in the diamond anvil high‐pressure cell
journal, November 1986

Patel, Dinesh; Crumbaker, Todd E.; Sites, James R.
Review of Scientific Instruments, Vol. 57, Issue 11
DOI: 10.1063/1.1139045

In situ Hall measurements at temperatures up to 1100 degrees C with selectable gas atmospheres
journal, May 1994

Fleischer, M.; Meixner, H.
Measurement Science and Technology, Vol. 5, Issue 5
DOI: 10.1088/0957-0233/5/5/018

On a New Action of the Magnet on Electric Currents
journal, September 1879

Hall, E. H.
American Journal of Mathematics, Vol. 2, Issue 3
DOI: 10.2307/2369245

High-Temperature Hall Measurements on BaSnO3Ceramics
journal, August 1997

Ostrick, Bernhard; Fleischer, Maximilian; Meixner, Hans
Journal of the American Ceramic Society, Vol. 80, Issue 8
DOI: 10.1111/j.1151-2916.1997.tb03102.x

Micro-four-point probe Hall effect measurement method
journal, July 2008

Petersen, Dirch H.; Hansen, Ole; Lin, Rong
Journal of Applied Physics, Vol. 104, Issue 1
DOI: 10.1063/1.2949401

Thermoelectrics
book, January 2001

Nolas, George S.; Sharp, Jeffrey; Goldsmid, H. Julian
Springer Series in Materials Science
DOI: 10.1007/978-3-662-04569-5

Unified equations for the slope, intercept, and standard errors of the best straight line
journal, March 2004

York, Derek; Evensen, Norman M.; Martı́nez, Margarita López
American Journal of Physics, Vol. 72, Issue 3
DOI: 10.1119/1.1632486

EuO. I. Resistivity and Hall Effect in Fields up to 150 kOe
journal, September 1973

Shapira, Y.; Foner, S.; Reed, T. B.
Physical Review B, Vol. 8, Issue 5
DOI: 10.1103/PhysRevB.8.2299

Hall measurements of bilayer structures
journal, January 2003

Jain, S. H.; Griffin, P. B.; Plummer, J. D.
Journal of Applied Physics, Vol. 93, Issue 2
DOI: 10.1063/1.1529093

Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
journal, July 1983

Masetti, G.; Severi, M.; Solmi, S.
IEEE Transactions on Electron Devices, Vol. 30, Issue 7
DOI: 10.1109/T-ED.1983.21207

High temperature setup for measurements of Seebeck coefficient and electrical resistivity of thin films using inductive heating
journal, October 2015

Adnane, L.; Williams, N.; Silva, H.
Review of Scientific Instruments, Vol. 86, Issue 10
DOI: 10.1063/1.4934577

Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
journal, March 1949

Pearson, G. L.; Bardeen, J.
Physical Review, Vol. 75, Issue 5
DOI: 10.1103/PhysRev.75.865

A sensitive method of Hall measurement
journal, August 1972

Lomas, R. A.; Hampshire, M. J.; Tomlinson, R. D.
Journal of Physics E: Scientific Instruments, Vol. 5, Issue 8
DOI: 10.1088/0022-3735/5/8/029

Resistivity of Bulk Silicon and of Diffused Layers in Silicon
journal, March 1962

Irvin, John C.
Bell System Technical Journal, Vol. 41, Issue 2
DOI: 10.1002/j.1538-7305.1962.tb02415.x

Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor Surface
journal, June 1958

Petritz, Richard L.
Physical Review, Vol. 110, Issue 6
DOI: 10.1103/PhysRev.110.1254

Ettingshausen Effect and Thermomagnetic Cooling
journal, July 1958

O'Brien, B. J.; Wallace, C. S.
Journal of Applied Physics, Vol. 29, Issue 7
DOI: 10.1063/1.1723352

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Title: High temperature Hall measurement setup for thin film characterization

Citation Formats

Hall effect measurement in the diamond anvil high‐pressure cell journal, November 1986

In situ Hall measurements at temperatures up to 1100 degrees C with selectable gas atmospheres journal, May 1994

On a New Action of the Magnet on Electric Currents journal, September 1879

High-Temperature Hall Measurements on BaSnO3Ceramics journal, August 1997

Micro-four-point probe Hall effect measurement method journal, July 2008

Thermoelectrics book, January 2001

Unified equations for the slope, intercept, and standard errors of the best straight line journal, March 2004

EuO. I. Resistivity and Hall Effect in Fields up to 150 kOe journal, September 1973

Hall measurements of bilayer structures journal, January 2003

Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon journal, July 1983

High temperature setup for measurements of Seebeck coefficient and electrical resistivity of thin films using inductive heating journal, October 2015

Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus journal, March 1949

A sensitive method of Hall measurement journal, August 1972

Resistivity of Bulk Silicon and of Diffused Layers in Silicon journal, March 1962

Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor Surface journal, June 1958

Ettingshausen Effect and Thermomagnetic Cooling journal, July 1958

Hall effect measurement in the diamond anvil high‐pressure cell
journal, November 1986

In situ Hall measurements at temperatures up to 1100 degrees C with selectable gas atmospheres
journal, May 1994

On a New Action of the Magnet on Electric Currents
journal, September 1879

High-Temperature Hall Measurements on BaSnO3Ceramics
journal, August 1997

Micro-four-point probe Hall effect measurement method
journal, July 2008

Thermoelectrics
book, January 2001

Unified equations for the slope, intercept, and standard errors of the best straight line
journal, March 2004

EuO. I. Resistivity and Hall Effect in Fields up to 150 kOe
journal, September 1973

Hall measurements of bilayer structures
journal, January 2003

Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
journal, July 1983

High temperature setup for measurements of Seebeck coefficient and electrical resistivity of thin films using inductive heating
journal, October 2015

Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
journal, March 1949

A sensitive method of Hall measurement
journal, August 1972

Resistivity of Bulk Silicon and of Diffused Layers in Silicon
journal, March 1962

Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor Surface
journal, June 1958

Ettingshausen Effect and Thermomagnetic Cooling
journal, July 1958