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Title: Laser damage mechanisms in conductive widegap semiconductor films

Here, laser damage mechanisms of two conductive wide-bandgap semiconductor films - indium tin oxide (ITO) and silicon doped GaN (Si:GaN) were studied via microscopy, spectroscopy, photoluminescence (PL), and elemental analysis. Nanosecond laser pulse exposures with a laser photon energy (1.03 eV, 1064 nm) smaller than the conductive films bandgaps were applied and radically different film damage morphologies were produced. The laser damaged ITO film exhibited deterministic features of thermal degradation. In contrast, laser damage in the Si:GaN film resulted in highly localized eruptions originating at interfaces. For ITO, thermally driven damage was related to free carrier absorption and, for GaN, carbon complexes were proposed as potential damage precursors or markers.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [3] ;  [1] ;  [1]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  2. Cornell Univ., Ithaca, NY (United States)
  3. Univ. of Rochester, Rochester, NY (United States)
Publication Date:
Report Number(s):
LLNL-JRNL-694293
Journal ID: ISSN 1094-4087; OPEXFF
Grant/Contract Number:
AC52-07NA27344; 15-ERD-057
Type:
Published Article
Journal Name:
Optics Express
Additional Journal Information:
Journal Volume: 24; Journal Issue: 16; Journal ID: ISSN 1094-4087
Publisher:
Optical Society of America (OSA)
Research Org:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; lasers and laser optics; laser materials; laser damage; optics at surfaces
OSTI Identifier:
1271471
Alternate Identifier(s):
OSTI ID: 1313552