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Title: Size dictated thermal conductivity of GaN

Abstract

The thermal conductivity on n- and p-type doped gallium nitride (GaN) epilayers having thickness of 3-4 μm was investigated using time domain thermoreflectance (TDTR). Despite possessing carrier concentrations ranging across 3 decades (1015 – 1018 cm–3), n-type layers exhibit a nearly constant thermal conductivity of 180 W/mK. The thermal conductivity of p-type epilayers, in contrast, reduces from 160 to 110 W/mK with increased doping. These trends–and their overall reduction relative to bulk–are explained leveraging established scattering models where it is shown that size effects play a primary role in limiting thermal conductivity for layers even tens of microns thick. GaN device layers, even of pristine quality, will therefore exhibit thermal conductivities less than the bulk value of 240 W/mK owing to their finite thickness.

Authors:
;  [1];  [2];  [2];  [3];  [3];  [4];  [4];  [4]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Sandia National Lab. (SNL-CA), Livermore, CA (United States)
  3. North Carolina State Univ., Raleigh, NC (United States)
  4. Univ. of Virginia, Charlottesville, VA (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories, Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)
OSTI Identifier:
1269902
Alternate Identifier(s):
OSTI ID: 1315839; OSTI ID: 1340179
Report Number(s):
SAND-2016-3450J; SAND2016-2716J
Journal ID: ISSN 0021-8979; 638268
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 120; Journal Issue: 9; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Thomas Edwin Beechem, McDonald, Anthony E., Fuller, Elliot James, Talin, Albert Alec, Rost, Christina M., Maria, Jon -Paul, Gaskins, John T., Hopkins, Patrick E., and Allerman, Andrew A. Size dictated thermal conductivity of GaN. United States: N. p., 2016. Web. doi:10.1063/1.4962010.
Thomas Edwin Beechem, McDonald, Anthony E., Fuller, Elliot James, Talin, Albert Alec, Rost, Christina M., Maria, Jon -Paul, Gaskins, John T., Hopkins, Patrick E., & Allerman, Andrew A. Size dictated thermal conductivity of GaN. United States. doi:10.1063/1.4962010.
Thomas Edwin Beechem, McDonald, Anthony E., Fuller, Elliot James, Talin, Albert Alec, Rost, Christina M., Maria, Jon -Paul, Gaskins, John T., Hopkins, Patrick E., and Allerman, Andrew A. Fri . "Size dictated thermal conductivity of GaN". United States. doi:10.1063/1.4962010. https://www.osti.gov/servlets/purl/1269902.
@article{osti_1269902,
title = {Size dictated thermal conductivity of GaN},
author = {Thomas Edwin Beechem and McDonald, Anthony E. and Fuller, Elliot James and Talin, Albert Alec and Rost, Christina M. and Maria, Jon -Paul and Gaskins, John T. and Hopkins, Patrick E. and Allerman, Andrew A.},
abstractNote = {The thermal conductivity on n- and p-type doped gallium nitride (GaN) epilayers having thickness of 3-4 μm was investigated using time domain thermoreflectance (TDTR). Despite possessing carrier concentrations ranging across 3 decades (1015 – 1018 cm–3), n-type layers exhibit a nearly constant thermal conductivity of 180 W/mK. The thermal conductivity of p-type epilayers, in contrast, reduces from 160 to 110 W/mK with increased doping. These trends–and their overall reduction relative to bulk–are explained leveraging established scattering models where it is shown that size effects play a primary role in limiting thermal conductivity for layers even tens of microns thick. GaN device layers, even of pristine quality, will therefore exhibit thermal conductivities less than the bulk value of 240 W/mK owing to their finite thickness.},
doi = {10.1063/1.4962010},
journal = {Journal of Applied Physics},
number = 9,
volume = 120,
place = {United States},
year = {2016},
month = {4}
}

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Cited by: 8 works
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