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Title: Controlling the density of pinhole defects in monolayer graphene synthesized via chemical vapor deposition on copper

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1266403
Grant/Contract Number:  
DE–SC0006414
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Carbon
Additional Journal Information:
Journal Name: Carbon Journal Volume: 100 Journal Issue: C; Journal ID: ISSN 0008-6223
Publisher:
Elsevier
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Singha Roy, Susmit, Jacobberger, Robert M., Wan, Chenghao, and Arnold, Michael S. Controlling the density of pinhole defects in monolayer graphene synthesized via chemical vapor deposition on copper. United Kingdom: N. p., 2016. Web. doi:10.1016/j.carbon.2015.12.089.
Singha Roy, Susmit, Jacobberger, Robert M., Wan, Chenghao, & Arnold, Michael S. Controlling the density of pinhole defects in monolayer graphene synthesized via chemical vapor deposition on copper. United Kingdom. doi:10.1016/j.carbon.2015.12.089.
Singha Roy, Susmit, Jacobberger, Robert M., Wan, Chenghao, and Arnold, Michael S. Fri . "Controlling the density of pinhole defects in monolayer graphene synthesized via chemical vapor deposition on copper". United Kingdom. doi:10.1016/j.carbon.2015.12.089.
@article{osti_1266403,
title = {Controlling the density of pinhole defects in monolayer graphene synthesized via chemical vapor deposition on copper},
author = {Singha Roy, Susmit and Jacobberger, Robert M. and Wan, Chenghao and Arnold, Michael S.},
abstractNote = {},
doi = {10.1016/j.carbon.2015.12.089},
journal = {Carbon},
number = C,
volume = 100,
place = {United Kingdom},
year = {2016},
month = {4}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1016/j.carbon.2015.12.089

Citation Metrics:
Cited by: 5 works
Citation information provided by
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