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Title: Stacking-dependent interlayer coupling in trilayer MoS 2 with broken inversion symmetry

Abstract

The stacking configuration in few-layer two-dimensional (2D) materials results in different structural symmetries and layer-to-layer interactions, and hence it provides a very useful parameter for tuning their electronic properties. For example, ABA-stacking trilayer graphene remains semimetallic similar to that of monolayer, while ABC-stacking is predicted to be a tunable band gap semiconductor under an external electric field. Such stacking dependence resulting from many-body interactions has recently been the focus of intense research activities. Here we demonstrate that few-layer MoS 2 samples grown by chemical vapor deposition with different stacking configurations (AA, AB for bilayer; AAB, ABB, ABA, AAA for trilayer) exhibit distinct coupling phenomena in both photoluminescence and Raman spectra. By means of ultralow-frequency (ULF) Raman spectroscopy, we demonstrate that the evolution of interlayer interaction with various stacking configurations correlates strongly with layer-breathing mode (LBM) vibrations. Our ab initio calculations reveal that the layer-dependent properties arise from both the spin–orbit coupling (SOC) and interlayer coupling in different structural symmetries. Lastly, such detailed understanding provides useful guidance for future spintronics fabrication using various stacked few-layer MoS 2 blocks.

Authors:
 [1];  [1];  [1];  [2];  [1];  [1];  [1];  [3];  [4];  [1]
  1. Nanyang Technological Univ. (Singapore)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Chinese Academy of Sciences, Changchun (People's Republic of China)
  4. Academia Sinica, Taipei (Taiwan)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1265956
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 15; Journal Issue: 12; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Yan, Jiaxu, Wang, Xingli, Tay, Beng Kang, Zhou, Wu, Liu, Zheng, Shen, Ze Xiang, Xia, Juan, Liu, Lei, Kuo, Jer -Lai, and Chen, Shoushun. Stacking-dependent interlayer coupling in trilayer MoS2 with broken inversion symmetry. United States: N. p., 2015. Web. doi:10.1021/acs.nanolett.5b03597.
Yan, Jiaxu, Wang, Xingli, Tay, Beng Kang, Zhou, Wu, Liu, Zheng, Shen, Ze Xiang, Xia, Juan, Liu, Lei, Kuo, Jer -Lai, & Chen, Shoushun. Stacking-dependent interlayer coupling in trilayer MoS2 with broken inversion symmetry. United States. doi:10.1021/acs.nanolett.5b03597.
Yan, Jiaxu, Wang, Xingli, Tay, Beng Kang, Zhou, Wu, Liu, Zheng, Shen, Ze Xiang, Xia, Juan, Liu, Lei, Kuo, Jer -Lai, and Chen, Shoushun. Fri . "Stacking-dependent interlayer coupling in trilayer MoS2 with broken inversion symmetry". United States. doi:10.1021/acs.nanolett.5b03597. https://www.osti.gov/servlets/purl/1265956.
@article{osti_1265956,
title = {Stacking-dependent interlayer coupling in trilayer MoS2 with broken inversion symmetry},
author = {Yan, Jiaxu and Wang, Xingli and Tay, Beng Kang and Zhou, Wu and Liu, Zheng and Shen, Ze Xiang and Xia, Juan and Liu, Lei and Kuo, Jer -Lai and Chen, Shoushun},
abstractNote = {The stacking configuration in few-layer two-dimensional (2D) materials results in different structural symmetries and layer-to-layer interactions, and hence it provides a very useful parameter for tuning their electronic properties. For example, ABA-stacking trilayer graphene remains semimetallic similar to that of monolayer, while ABC-stacking is predicted to be a tunable band gap semiconductor under an external electric field. Such stacking dependence resulting from many-body interactions has recently been the focus of intense research activities. Here we demonstrate that few-layer MoS2 samples grown by chemical vapor deposition with different stacking configurations (AA, AB for bilayer; AAB, ABB, ABA, AAA for trilayer) exhibit distinct coupling phenomena in both photoluminescence and Raman spectra. By means of ultralow-frequency (ULF) Raman spectroscopy, we demonstrate that the evolution of interlayer interaction with various stacking configurations correlates strongly with layer-breathing mode (LBM) vibrations. Our ab initio calculations reveal that the layer-dependent properties arise from both the spin–orbit coupling (SOC) and interlayer coupling in different structural symmetries. Lastly, such detailed understanding provides useful guidance for future spintronics fabrication using various stacked few-layer MoS2 blocks.},
doi = {10.1021/acs.nanolett.5b03597},
journal = {Nano Letters},
number = 12,
volume = 15,
place = {United States},
year = {2015},
month = {11}
}

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