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Title: In-situ luminescence monitoring of ion-induced damage evolution in SiO2 and Al2O3

Abstract

Real-time, in-situ ionoluminescence measurements provide information of evolution of emission bands with ion fluence, and thereby establish a correlation between point defect kinetics and phase stability. Using fast light ions (2 MeV H and 3.5 He MeV) and medium mass-high energy ions (8 MeV O, E=0.5 MeV/amu), scintillation materials of a-SiO2, crystalline quartz, and Al2O3 are comparatively investigated at room temperature with the aim of obtaining a further insight on the structural defects induced by ion irradiation and understand the role of electronic energy loss on the damage processes. For more energetic heavy ions, the electronic energy deposition pattern offers higher rates of excitation deeper into the material and allows to evaluate the competing mechanisms between the radiative and non-radiative de-excitation processes. Irradiations with 8 MeV O ions have been selected corresponding to the electronic stopping regime, where the electronic stopping power is dominant, and above the critical amorphization threshold for quartz. Lastly, the usefulness of IBIL and its specific capabilities as a sensitive tool to investigate the material characterization and evaluation of radiation effects are demonstrated.

Authors:
 [1];  [1];  [2];  [2]
  1. Univ. of Tennessee, Knoxville, TN (United States)
  2. Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1265945
Alternate Identifier(s):
OSTI ID: 1396535
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Luminescence
Additional Journal Information:
Journal Volume: 172; Journal ID: ISSN 0022-2313
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; luminescence; radiation damage; silica; alumina; quartz; ion beam induced luminescence; ion-solid interaction; irradiation effects

Citation Formats

Crespillo, Miguel L., Graham, Joseph T., Zhang, Yanwen, and Weber, William J.. In-situ luminescence monitoring of ion-induced damage evolution in SiO2 and Al2O3. United States: N. p., 2015. Web. https://doi.org/10.1016/j.jlumin.2015.12.016.
Crespillo, Miguel L., Graham, Joseph T., Zhang, Yanwen, & Weber, William J.. In-situ luminescence monitoring of ion-induced damage evolution in SiO2 and Al2O3. United States. https://doi.org/10.1016/j.jlumin.2015.12.016
Crespillo, Miguel L., Graham, Joseph T., Zhang, Yanwen, and Weber, William J.. Thu . "In-situ luminescence monitoring of ion-induced damage evolution in SiO2 and Al2O3". United States. https://doi.org/10.1016/j.jlumin.2015.12.016. https://www.osti.gov/servlets/purl/1265945.
@article{osti_1265945,
title = {In-situ luminescence monitoring of ion-induced damage evolution in SiO2 and Al2O3},
author = {Crespillo, Miguel L. and Graham, Joseph T. and Zhang, Yanwen and Weber, William J.},
abstractNote = {Real-time, in-situ ionoluminescence measurements provide information of evolution of emission bands with ion fluence, and thereby establish a correlation between point defect kinetics and phase stability. Using fast light ions (2 MeV H and 3.5 He MeV) and medium mass-high energy ions (8 MeV O, E=0.5 MeV/amu), scintillation materials of a-SiO2, crystalline quartz, and Al2O3 are comparatively investigated at room temperature with the aim of obtaining a further insight on the structural defects induced by ion irradiation and understand the role of electronic energy loss on the damage processes. For more energetic heavy ions, the electronic energy deposition pattern offers higher rates of excitation deeper into the material and allows to evaluate the competing mechanisms between the radiative and non-radiative de-excitation processes. Irradiations with 8 MeV O ions have been selected corresponding to the electronic stopping regime, where the electronic stopping power is dominant, and above the critical amorphization threshold for quartz. Lastly, the usefulness of IBIL and its specific capabilities as a sensitive tool to investigate the material characterization and evaluation of radiation effects are demonstrated.},
doi = {10.1016/j.jlumin.2015.12.016},
journal = {Journal of Luminescence},
number = ,
volume = 172,
place = {United States},
year = {2015},
month = {12}
}

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Cited by: 10 works
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    Works referencing / citing this record:

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