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Title: Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance

Abstract

In this paper, nano-engineered 3C–SiC thin films, which possess columnar structures with high-density stacking faults and twins, were irradiated with 2 MeV Si ions at cryogenic and room temperatures. From cross-sectional transmission electron microscopy observations in combination with Monte Carlo simulations based on the Stopping and Range of Ions in Matter code, it was found that their amorphization resistance is six times greater than bulk crystalline SiC at room temperature. High-angle bright-field images taken by spherical aberration corrected scanning transmission electron microscopy revealed that the distortion of atomic configurations is localized near the stacking faults. Finally, the resultant strain field probably contributes to the enhancement of radiation tolerance of this material.

Authors:
 [1];  [1];  [2];  [3];  [4];  [5];  [6]
  1. Kyushu Inst. of Technology, Fukuoka (Japan). Dept. of Materials Science and Engineering
  2. Tohoku Univ., Sendai (Japan). Inst. for Materials Research
  3. Univ. of Tennessee, Knoxville, TN (United States). Materials Science and Engineering Dept.
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Materials Science and Engineering Dept.
  5. North Carolina State Univ., Raleigh, NC (United States). Dept. of Nuclear Engineering
  6. Univ. of Tennessee, Knoxville, TN (United States). Materials Science and Engineering Dept.; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); Ministry of Education, Sports, Science, and Technology (Japan)
OSTI Identifier:
1265572
Alternate Identifier(s):
OSTI ID: 1251994
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Nuclear Materials
Additional Journal Information:
Journal Volume: 465; Journal ID: ISSN 0022-3115
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Imada, Kenta, Ishimaru, Manabu, Sato, Kazuhisa, Xue, Haizhou, Zhang, Yanwen, Shannon, Steven, and Weber, William J. Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance. United States: N. p., 2015. Web. doi:10.1016/j.jnucmat.2015.06.036.
Imada, Kenta, Ishimaru, Manabu, Sato, Kazuhisa, Xue, Haizhou, Zhang, Yanwen, Shannon, Steven, & Weber, William J. Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance. United States. doi:10.1016/j.jnucmat.2015.06.036.
Imada, Kenta, Ishimaru, Manabu, Sato, Kazuhisa, Xue, Haizhou, Zhang, Yanwen, Shannon, Steven, and Weber, William J. Thu . "Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance". United States. doi:10.1016/j.jnucmat.2015.06.036. https://www.osti.gov/servlets/purl/1265572.
@article{osti_1265572,
title = {Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance},
author = {Imada, Kenta and Ishimaru, Manabu and Sato, Kazuhisa and Xue, Haizhou and Zhang, Yanwen and Shannon, Steven and Weber, William J.},
abstractNote = {In this paper, nano-engineered 3C–SiC thin films, which possess columnar structures with high-density stacking faults and twins, were irradiated with 2 MeV Si ions at cryogenic and room temperatures. From cross-sectional transmission electron microscopy observations in combination with Monte Carlo simulations based on the Stopping and Range of Ions in Matter code, it was found that their amorphization resistance is six times greater than bulk crystalline SiC at room temperature. High-angle bright-field images taken by spherical aberration corrected scanning transmission electron microscopy revealed that the distortion of atomic configurations is localized near the stacking faults. Finally, the resultant strain field probably contributes to the enhancement of radiation tolerance of this material.},
doi = {10.1016/j.jnucmat.2015.06.036},
journal = {Journal of Nuclear Materials},
number = ,
volume = 465,
place = {United States},
year = {2015},
month = {6}
}

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Cited by: 3 works
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