Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response
Abstract
In this paper, we demonstrate the strategies and principles for the performance improvement of layered semiconductor based photodetectors using multilayer indium selenide (InSe) as the model material. It is discovered that multiple reflection interference at the interfaces in the phototransistor device leads to a thickness-dependent photo-response, which provides a guideline to improve the performance of layered semiconductor based phototransistors. The responsivity and detectivity of InSe nanosheet phototransistor can be adjustable using applied gate voltage. Our InSe nanosheet phototransistor exhibits ultrahigh responsivity and detectivity. An ultrahigh external photo-responsivity of ~104 A W-1 can be achieved from broad spectra ranging from UV to near infrared wavelength using our InSe nanosheet photodetectors. The detectivity of multilayer InSe devices is ~1012 to 1013 Jones, which surpasses that of the currently exploited InGaAs photodetectors (1011 to 1012 Jones). Finally, this research shows that multilayer InSe nanosheets are promising materials for high performance photodetectors.
- Authors:
-
- Harbin Inst. of Technology (China). Key Lab. of Microsystem and Microstructure of Ministry of Education; Harbin Inst. of Technology (China). School of Materials Science and Engineering
- Chinese Academy of Sciences (CAS), Beijing (China). State Key Lab. of Super Lattices and Microstructures. Inst. of Semiconductors
- Harbin Inst. of Technology (China). Key Lab. of Microsystem and Microstructure of Ministry of Education
- Harbin Inst. of Technology (China). State Key Lab. of Urban Water Resource and Environment
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences
- Harbin Inst. of Technology (China). Condensed Matter Science and Technology Inst.
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Harbin Institute of Technology (China); Chinese Academy of Sciences (CAS), Beijing (China)
- Sponsoring Org.:
- USDOE Office of Science (SC); National Natural Science Foundation of China (NSFC); National Key Basic Research Program of China
- OSTI Identifier:
- 1265546
- Grant/Contract Number:
- 61172001; 21373068; 2013CB632900
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Materials Chemistry C
- Additional Journal Information:
- Journal Volume: 3; Journal Issue: 27; Journal ID: ISSN 2050-7526
- Publisher:
- Royal Society of Chemistry
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY
Citation Formats
Feng, Wei, Wu, Jing-Bin, Li, Xiaoli, Zheng, Wei, Zhou, Xin, Xiao, Kai, Cao, Wenwu, Yang, Bin, Idrobo, Juan-Carlos, Basile, Leonardo, Tian, Weiquan, Tan, PingHeng, and Hu, PingAn. Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response. United States: N. p., 2015.
Web. doi:10.1039/C5TC01208B.
Feng, Wei, Wu, Jing-Bin, Li, Xiaoli, Zheng, Wei, Zhou, Xin, Xiao, Kai, Cao, Wenwu, Yang, Bin, Idrobo, Juan-Carlos, Basile, Leonardo, Tian, Weiquan, Tan, PingHeng, & Hu, PingAn. Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response. United States. https://doi.org/10.1039/C5TC01208B
Feng, Wei, Wu, Jing-Bin, Li, Xiaoli, Zheng, Wei, Zhou, Xin, Xiao, Kai, Cao, Wenwu, Yang, Bin, Idrobo, Juan-Carlos, Basile, Leonardo, Tian, Weiquan, Tan, PingHeng, and Hu, PingAn. Wed .
"Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response". United States. https://doi.org/10.1039/C5TC01208B. https://www.osti.gov/servlets/purl/1265546.
@article{osti_1265546,
title = {Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response},
author = {Feng, Wei and Wu, Jing-Bin and Li, Xiaoli and Zheng, Wei and Zhou, Xin and Xiao, Kai and Cao, Wenwu and Yang, Bin and Idrobo, Juan-Carlos and Basile, Leonardo and Tian, Weiquan and Tan, PingHeng and Hu, PingAn},
abstractNote = {In this paper, we demonstrate the strategies and principles for the performance improvement of layered semiconductor based photodetectors using multilayer indium selenide (InSe) as the model material. It is discovered that multiple reflection interference at the interfaces in the phototransistor device leads to a thickness-dependent photo-response, which provides a guideline to improve the performance of layered semiconductor based phototransistors. The responsivity and detectivity of InSe nanosheet phototransistor can be adjustable using applied gate voltage. Our InSe nanosheet phototransistor exhibits ultrahigh responsivity and detectivity. An ultrahigh external photo-responsivity of ~104 A W-1 can be achieved from broad spectra ranging from UV to near infrared wavelength using our InSe nanosheet photodetectors. The detectivity of multilayer InSe devices is ~1012 to 1013 Jones, which surpasses that of the currently exploited InGaAs photodetectors (1011 to 1012 Jones). Finally, this research shows that multilayer InSe nanosheets are promising materials for high performance photodetectors.},
doi = {10.1039/C5TC01208B},
journal = {Journal of Materials Chemistry C},
number = 27,
volume = 3,
place = {United States},
year = {2015},
month = {5}
}
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Works referenced in this record:
Wide-bandgap semiconductor ultraviolet photodetectors
journal, March 2003
- Monroy, E.; Omn s., F.; Calle, F.
- Semiconductor Science and Technology, Vol. 18, Issue 4
Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors
journal, June 2012
- Hu, PingAn; Wen, Zhenzhong; Wang, Lifeng
- ACS Nano, Vol. 6, Issue 7
Ultrasensitive solution-cast quantum dot photodetectors
journal, July 2006
- Konstantatos, Gerasimos; Howard, Ian; Fischer, Armin
- Nature, Vol. 442, Issue 7099
Preparation and characterization of electrodeposited indium selenide thin films
journal, June 2005
- Gopal, S.; Viswanathan, C.; Karunagaran, B.
- Crystal Research and Technology, Vol. 40, Issue 6
Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates
journal, March 2013
- Hu, PingAn; Wang, Lifeng; Yoon, Mina
- Nano Letters, Vol. 13, Issue 4
Gadolinium-Encapsulating Iron Oxide Nanoprobe as Activatable NMR/MRI Contrast Agent
journal, July 2012
- Santra, Santimukul; Jativa, Samuel D.; Kaittanis, Charalambos
- ACS Nano, Vol. 6, Issue 8
High-Detectivity Polymer Photodetectors with Spectral Response from 300 nm to 1450 nm
journal, August 2009
- Gong, X.; Tong, M.; Xia, Y.
- Science, Vol. 325, Issue 5948
Optical properties of nanostructured InSe thin films
journal, March 2012
- El-Nahass, M. M.; Saleh, Abdul-Basit A.; Darwish, A. A. A.
- Optics Communications, Vol. 285, Issue 6
High-speed InGaAs metal-semiconductor-metal photodetectors with improved responsivity and process yield
journal, October 1996
- Yuang, Rong-Heng; Chyi, Jen-Inn; Lin, Wei
- Optical and Quantum Electronics, Vol. 28, Issue 10
Rayleigh Imaging of Graphene and Graphene Layers
journal, September 2007
- Casiraghi, C.; Hartschuh, A.; Lidorikis, E.
- Nano Letters, Vol. 7, Issue 9
Metal dichalcogenide nanosheets: preparation, properties and applications
journal, January 2013
- Huang, Xiao; Zeng, Zhiyuan; Zhang, Hua
- Chemical Society Reviews, Vol. 42, Issue 5, p. 1934-1946
Single-Layer MoS2 Phototransistors
journal, December 2011
- Yin, Zongyou; Li, Hai; Li, Hong
- ACS Nano, Vol. 6, Issue 1, p. 74-80
Reliably Counting Atomic Planes of Few-Layer Graphene ( n > 4)
journal, December 2010
- Koh, Yee Kan; Bae, Myung-Ho; Cahill, David G.
- ACS Nano, Vol. 5, Issue 1
Fabrication of Flexible MoS2 Thin-Film Transistor Arrays for Practical Gas-Sensing Applications
journal, July 2012
- He, Qiyuan; Zeng, Zhiyuan; Yin, Zongyou
- Small, Vol. 8, Issue 19, p. 2994-2999
Rayleigh Imaging of Graphene and Graphene Layers
text, January 2007
- Casiraghi, C.; Hartschuh, Achim; Lidorikis, E.
- Universitätsbibliothek der Ludwig-Maximilians-Universität München
Third-generation infrared photodetector arrays
journal, May 2009
- Rogalski, A.; Antoszewski, J.; Faraone, L.
- Journal of Applied Physics, Vol. 105, Issue 9
High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response
journal, April 2014
- Tamalampudi, Srinivasa Reddy; Lu, Yi-Ying; Kumar U., Rajesh
- Nano Letters, Vol. 14, Issue 5
Interference enhancement of Raman signal of graphene
journal, January 2008
- Wang, Y. Y.; Ni, Z. H.; Shen, Z. X.
- Applied Physics Letters, Vol. 92, Issue 4
Extraordinary Photoresponse in Two-Dimensional In 2 Se 3 Nanosheets
journal, December 2013
- Jacobs-Gedrim, Robin B.; Shanmugam, Mariyappan; Jain, Nikhil
- ACS Nano, Vol. 8, Issue 1
Single-Layer Semiconducting Nanosheets: High-Yield Preparation and Device Fabrication
journal, October 2011
- Zeng, Zhiyuan; Yin, Zongyou; Huang, Xiao
- Angewandte Chemie, Vol. 123, Issue 47
High-Sensitivity Photodetectors Based on Multilayer GaTe Flakes
journal, December 2013
- Liu, Fucai; Shimotani, Hidekazu; Shang, Hui
- ACS Nano, Vol. 8, Issue 1
Layer number identification of intrinsic and defective multilayered graphenes up to 100 layers by the Raman mode intensity from substrates
journal, January 2015
- Li, Xiao-Li; Qiao, Xiao-Fen; Han, Wen-Peng
- Nanoscale, Vol. 7, Issue 17
Controlled Growth of High-Quality Monolayer WS 2 Layers on Sapphire and Imaging Its Grain Boundary
journal, September 2013
- Zhang, Yu; Zhang, Yanfeng; Ji, Qingqing
- ACS Nano, Vol. 7, Issue 10
Single-Layer Semiconducting Nanosheets: High-Yield Preparation and Device Fabrication
journal, October 2011
- Zeng, Zhiyuan; Yin, Zongyou; Huang, Xiao
- Angewandte Chemie International Edition, Vol. 50, Issue 47, p. 11093-11097
Ultrasensitive photodetectors based on monolayer MoS2
journal, June 2013
- Lopez-Sanchez, Oriol; Lembke, Dominik; Kayci, Metin
- Nature Nanotechnology, Vol. 8, Issue 7
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
journal, April 2013
- Chhowalla, Manish; Shin, Hyeon Suk; Eda, Goki
- Nature Chemistry, Vol. 5, Issue 4, p. 263-275
Evolution of the Electronic Band Structure and Efficient Photo-Detection in Atomic Layers of InSe
journal, January 2014
- Lei, Sidong; Ge, Liehui; Najmaei, Sina
- ACS Nano, Vol. 8, Issue 2
Interference effect on Raman spectrum of graphene on
journal, September 2009
- Yoon, Duhee; Moon, Hyerim; Son, Young-Woo
- Physical Review B, Vol. 80, Issue 12
Electrical properties of vacuum-deposited polycrystalline InSe thin films
journal, July 1991
- Micocci, G.; Tepore, A.; Rella, R.
- Solar Energy Materials, Vol. 22, Issue 2-3
Raman Enhancement on Graphene: Adsorbed and Intercalated Molecular Species
journal, October 2010
- Jung, Naeyoung; Crowther, Andrew C.; Kim, Namdong
- ACS Nano, Vol. 4, Issue 11
Optical Transitions in the Spectra of the Fundamental Absorption and Reflection of InSe Single Crystals
journal, January 1968
- Andriyashik, M. V.; Yu. Sakhnovskii, M.; Timofeev, V. B.
- Physica Status Solidi (b), Vol. 28, Issue 1
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High-responsivity two-dimensional p-PbI 2 /n-WS 2 vertical heterostructure photodetectors enhanced by photogating effect
journal, January 2019
- Qi, Zhaoyang; Yang, Tiefeng; Li, Dong
- Materials Horizons, Vol. 6, Issue 7
2D Metal Chalcogenides for IR Photodetection
journal, May 2019
- Wang, Fakun; Zhang, Yue; Gao, Yu
- Small, Vol. 15, Issue 30
High Responsivity Phototransistors Based on Few-Layer ReS 2 for Weak Signal Detection
journal, February 2016
- Liu, Erfu; Long, Mingsheng; Zeng, Junwen
- Advanced Functional Materials, Vol. 26, Issue 12
Photonics and optoelectronics of two-dimensional materials beyond graphene
journal, October 2016
- Ponraj, Joice Sophia; Xu, Zai-Quan; Dhanabalan, Sathish Chander
- Nanotechnology, Vol. 27, Issue 46
2D SnO/In 2 O 3 van der Waals Heterostructure Photodetector Based on Printed Oxide Skin of Liquid Metals
journal, February 2019
- Alsaif, Manal M. Y. A.; Kuriakose, Sruthi; Walia, Sumeet
- Advanced Materials Interfaces, Vol. 6, Issue 7
Flexible Photodetector Based on 2D Materials: Processing, Architectures, and Applications
journal, January 2020
- Dong, Tao; Simões, João; Yang, Zhaochu
- Advanced Materials Interfaces, Vol. 7, Issue 4
The role of traps in the photocurrent generation mechanism in thin InSe photodetectors
journal, January 2020
- Zhao, Qinghua; Wang, Wei; Carrascoso-Plana, Felix
- Materials Horizons, Vol. 7, Issue 1
High Electron Mobility, Quantum Hall Effect and Anomalous Optical Response in Atomically Thin InSe
text, January 2016
- Bandurin, D. A.; Tyurnina, A. V.; Yu, G. L.
- arXiv
Low-cost VO 2 (M1) thin films synthesized by ultrasonic nebulized spray pyrolysis of an aqueous combustion mixture for IR photodetection
journal, January 2019
- Tadeo, Inyalot Jude; Mukhokosi, Emma P.; Krupanidhi, Saluru B.
- RSC Advances, Vol. 9, Issue 18
Producing air-stable InSe nanosheet through mild oxygen plasma treatment
journal, June 2018
- Nan, Haiyan; Guo, Sijia; Cai, Shuang
- Semiconductor Science and Technology, Vol. 33, Issue 7
Highly Polarized and Fast Photoresponse of Black Phosphorus-InSe Vertical p-n Heterojunctions
journal, June 2018
- Zhao, Siwen; Wu, Junchi; Jin, Ke
- Advanced Functional Materials, Vol. 28, Issue 34
2D Perovskite Sr 2 Nb 3 O 10 for High‐Performance UV Photodetectors
journal, November 2019
- Li, Siyuan; Zhang, Yong; Yang, Wei
- Advanced Materials, Vol. 32, Issue 7
Self‐Powered MoS 2 –PDPP3T Heterotransistor‐Based Broadband Photodetectors
journal, December 2018
- Sun, Mengxing; Yang, Pengfei; Xie, Dan
- Advanced Electronic Materials
Tunable electronic and optical properties of InSe/InTe van der Waals heterostructures toward optoelectronic applications
journal, January 2018
- Shang, Jimin; Pan, Longfei; Wang, Xiaoting
- Journal of Materials Chemistry C, Vol. 6, Issue 27
Synthesis and Surface-Enhanced Raman Scattering of Ultrathin SnSe2 Nanoflakes by Chemical Vapor Deposition
journal, July 2018
- Zhang, Yongheng; Shi, Ying; Wu, Meimei
- Nanomaterials, Vol. 8, Issue 7
Photodetection application of one-step synthesized wafer-scale monolayer MoS 2 by chemical vapor deposition
journal, February 2020
- Liu, Lixuan; Ye, Kun; Yu, Zhipeng
- 2D Materials, Vol. 7, Issue 2
Layer-Number Dependent Optical Properties of 2D Materials and Their Application for Thickness Determination
journal, January 2017
- Li, Xiao-Li; Han, Wen-Peng; Wu, Jiang-Bin
- Advanced Functional Materials, Vol. 27, Issue 19
High-performance and flexible photodetectors based on chemical vapor deposition grown two-dimensional In 2 Se 3 nanosheets
journal, September 2018
- Feng, Wei; Gao, Feng; Hu, Yunxia
- Nanotechnology, Vol. 29, Issue 44
Recent Progress on Localized Field Enhanced Two-dimensional Material Photodetectors from Ultraviolet-Visible to Infrared
journal, June 2017
- Wang, Jianlu; Fang, Hehai; Wang, Xudong
- Small, Vol. 13, Issue 35
2D semiconductors towards high-performance ultraviolet photodetection
journal, May 2019
- Zhang, Qi; Li, Xin; He, Zhiwei
- Journal of Physics D: Applied Physics, Vol. 52, Issue 30
Photo-excited carrier relaxation dynamics in two-dimensional InSe flakes
journal, December 2019
- Li, Ying; Ye, Jialiang; Yuan, Kai
- Nanotechnology, Vol. 31, Issue 9
Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn7Se11)
journal, June 2019
- Patil, Prasanna D.; Ghosh, Sujoy; Wasala, Milinda
- Electronics, Vol. 8, Issue 6
Liquid phase exfoliation of MoO 2 nanosheets for lithium ion battery applications
journal, January 2019
- Boland, John B.; Harvey, Andrew; Tian, Ruiyuan
- Nanoscale Advances, Vol. 1, Issue 4
Photodetectors Based on Two-Dimensional Layered Materials Beyond Graphene
journal, November 2016
- Xie, Chao; Mak, Chunhin; Tao, Xiaoming
- Advanced Functional Materials, Vol. 27, Issue 19
Production of Ni(OH) 2 nanosheets by liquid phase exfoliation: from optical properties to electrochemical applications
journal, January 2016
- Harvey, Andrew; He, Xiaoyun; Godwin, Ian J.
- Journal of Materials Chemistry A, Vol. 4, Issue 28
Temperature-dependent growth of few layer β -InSe and α -In 2 Se 3 single crystals for optoelectronic device
journal, October 2018
- Hu, Yunxia; Feng, Wei; Dai, Mingjin
- Semiconductor Science and Technology, Vol. 33, Issue 12
Transition‐Metal‐Carbide (Mo 2 C) Multiperiod Gratings for Realization of High‐Sensitivity and Broad‐Spectrum Photodetection
journal, September 2019
- Jeon, Jaeho; Choi, Haeju; Choi, Seunghyuk
- Advanced Functional Materials, Vol. 29, Issue 48
Contact engineering high-performance ambipolar multilayer tellurium transistors
journal, December 2019
- Qin, Fanglu; Hu, Yunxia; Hu, PingAn
- Nanotechnology, Vol. 31, Issue 11
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
journal, November 2016
- Bandurin, Denis A.; Tyurnina, Anastasia V.; Yu, Geliang L.
- Nature Nanotechnology, Vol. 12, Issue 3
Bi 2 O 3 monolayers from elemental liquid bismuth
journal, January 2018
- Messalea, Kibret A.; Carey, Benjamin J.; Jannat, Azmira
- Nanoscale, Vol. 10, Issue 33
Liquid-Phase Exfoliated Indium-Selenide Flakes and Their Application in Hydrogen Evolution Reaction
journal, May 2018
- Petroni, Elisa; Lago, Emanuele; Bellani, Sebastiano
- Small, Vol. 14, Issue 26
A fast and zero-biased photodetector based on GaTe–InSe vertical 2D p–n heterojunction
journal, February 2018
- Feng, W.; Jin, Z.; Yuan, J.
- 2D Materials, Vol. 5, Issue 2
Recent Progress in 2D Layered III–VI Semiconductors and their Heterostructures for Optoelectronic Device Applications
journal, May 2019
- Yang, Zhibin; Hao, Jianhua
- Advanced Materials Technologies, Vol. 4, Issue 8
The role of traps in the photocurrent generation mechanism in thin In-Se photodetectors
text, January 2020
- Zhao, Qinghua; Wang, Wei; Carrascoso-Plana, Felix
- arXiv
A 1300 mm 2 Ultrahigh-Performance Digital Imaging Assembly using High-Quality Perovskite Single Crystals
journal, May 2018
- Liu, Yucheng; Zhang, Yunxia; Zhao, Kui
- Advanced Materials, Vol. 30, Issue 29
Out-of-plane orientation of luminescent excitons in two-dimensional indium selenide
journal, September 2019
- Brotons-Gisbert, Mauro; Proux, Raphaël; Picard, Raphaël
- Nature Communications, Vol. 10, Issue 1
2D material broadband photodetectors
journal, January 2020
- Yao, Jiandong; Yang, Guowei
- Nanoscale, Vol. 12, Issue 2
Highly sensitive MoS 2 photodetectors with graphene contacts
journal, March 2018
- Han, Peize; St. Marie, Luke; Wang, Qing X.
- Nanotechnology, Vol. 29, Issue 20
Synthesis and emerging properties of 2D layered III–VI metal chalcogenides
journal, December 2019
- Cai, Hui; Gu, Yiyi; Lin, Yu-Chuan
- Applied Physics Reviews, Vol. 6, Issue 4
Progress, Challenges, and Opportunities for 2D Material Based Photodetectors
journal, September 2018
- Long, Mingsheng; Wang, Peng; Fang, Hehai
- Advanced Functional Materials, Vol. 29, Issue 19
InSe: a two-dimensional material with strong interlayer coupling
text, January 2018
- Sun, Yuanhui; Luo, Shulin; Zhao, Xin-Gang
- arXiv
Ultrathin SnSe 2 Flakes Grown by Chemical Vapor Deposition for High-Performance Photodetectors
journal, November 2015
- Zhou, Xing; Gan, Lin; Tian, Wenming
- Advanced Materials, Vol. 27, Issue 48
Synthesis of Large-Area InSe Monolayers by Chemical Vapor Deposition
journal, August 2018
- Chang, Han-Ching; Tu, Chien-Liang; Lin, Kuang-I
- Small, Vol. 14, Issue 39
Large-Size Growth of Ultrathin SnS 2 Nanosheets and High Performance for Phototransistors
journal, April 2016
- Zhou, Xing; Zhang, Qi; Gan, Lin
- Advanced Functional Materials, Vol. 26, Issue 24
Fast photoresponse and high detectivity in copper indium selenide (CuIn 7 Se 11 ) phototransistors
journal, October 2017
- Ghosh, Sujoy; Patil, Prasanna D.; Wasala, Milinda
- 2D Materials, Vol. 5, Issue 1
Effects of graphene/BN encapsulation, surface functionalization and molecular adsorption on the electronic properties of layered InSe: a first-principles study
journal, January 2018
- Kistanov, Andrey A.; Cai, Yongqing; Zhou, Kun
- Physical Chemistry Chemical Physics, Vol. 20, Issue 18
Effects of Graphene/BN Encapsulation, Surface Functionalization and Molecular Adsorption on the Electronic Properties of Layered InSe: A First-Principles Study
text, January 2018
- Kistanov, Andrey A.; Cai, Yongqing.; Zhou, Kun
- arXiv