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Title: Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response

Abstract

In this paper, we demonstrate the strategies and principles for the performance improvement of layered semiconductor based photodetectors using multilayer indium selenide (InSe) as the model material. It is discovered that multiple reflection interference at the interfaces in the phototransistor device leads to a thickness-dependent photo-response, which provides a guideline to improve the performance of layered semiconductor based phototransistors. The responsivity and detectivity of InSe nanosheet phototransistor can be adjustable using applied gate voltage. Our InSe nanosheet phototransistor exhibits ultrahigh responsivity and detectivity. An ultrahigh external photo-responsivity of ~104 A W-1 can be achieved from broad spectra ranging from UV to near infrared wavelength using our InSe nanosheet photodetectors. The detectivity of multilayer InSe devices is ~1012 to 1013 Jones, which surpasses that of the currently exploited InGaAs photodetectors (1011 to 1012 Jones). Finally, this research shows that multilayer InSe nanosheets are promising materials for high performance photodetectors.

Authors:
 [1];  [2];  [2];  [3];  [4];  [5];  [6];  [6];  [5];  [5];  [4];  [2];  [3]
  1. Harbin Inst. of Technology (China). Key Lab. of Microsystem and Microstructure of Ministry of Education; Harbin Inst. of Technology (China). School of Materials Science and Engineering
  2. Chinese Academy of Sciences (CAS), Beijing (China). State Key Lab. of Super Lattices and Microstructures. Inst. of Semiconductors
  3. Harbin Inst. of Technology (China). Key Lab. of Microsystem and Microstructure of Ministry of Education
  4. Harbin Inst. of Technology (China). State Key Lab. of Urban Water Resource and Environment
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences
  6. Harbin Inst. of Technology (China). Condensed Matter Science and Technology Inst.
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Harbin Institute of Technology (China); Chinese Academy of Sciences (CAS), Beijing (China)
Sponsoring Org.:
USDOE Office of Science (SC); National Natural Science Foundation of China (NSFC); National Key Basic Research Program of China
OSTI Identifier:
1265546
Grant/Contract Number:  
61172001; 21373068; 2013CB632900
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Materials Chemistry C
Additional Journal Information:
Journal Volume: 3; Journal Issue: 27; Journal ID: ISSN 2050-7526
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Feng, Wei, Wu, Jing-Bin, Li, Xiaoli, Zheng, Wei, Zhou, Xin, Xiao, Kai, Cao, Wenwu, Yang, Bin, Idrobo, Juan-Carlos, Basile, Leonardo, Tian, Weiquan, Tan, PingHeng, and Hu, PingAn. Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response. United States: N. p., 2015. Web. doi:10.1039/C5TC01208B.
Feng, Wei, Wu, Jing-Bin, Li, Xiaoli, Zheng, Wei, Zhou, Xin, Xiao, Kai, Cao, Wenwu, Yang, Bin, Idrobo, Juan-Carlos, Basile, Leonardo, Tian, Weiquan, Tan, PingHeng, & Hu, PingAn. Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response. United States. https://doi.org/10.1039/C5TC01208B
Feng, Wei, Wu, Jing-Bin, Li, Xiaoli, Zheng, Wei, Zhou, Xin, Xiao, Kai, Cao, Wenwu, Yang, Bin, Idrobo, Juan-Carlos, Basile, Leonardo, Tian, Weiquan, Tan, PingHeng, and Hu, PingAn. Wed . "Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response". United States. https://doi.org/10.1039/C5TC01208B. https://www.osti.gov/servlets/purl/1265546.
@article{osti_1265546,
title = {Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response},
author = {Feng, Wei and Wu, Jing-Bin and Li, Xiaoli and Zheng, Wei and Zhou, Xin and Xiao, Kai and Cao, Wenwu and Yang, Bin and Idrobo, Juan-Carlos and Basile, Leonardo and Tian, Weiquan and Tan, PingHeng and Hu, PingAn},
abstractNote = {In this paper, we demonstrate the strategies and principles for the performance improvement of layered semiconductor based photodetectors using multilayer indium selenide (InSe) as the model material. It is discovered that multiple reflection interference at the interfaces in the phototransistor device leads to a thickness-dependent photo-response, which provides a guideline to improve the performance of layered semiconductor based phototransistors. The responsivity and detectivity of InSe nanosheet phototransistor can be adjustable using applied gate voltage. Our InSe nanosheet phototransistor exhibits ultrahigh responsivity and detectivity. An ultrahigh external photo-responsivity of ~104 A W-1 can be achieved from broad spectra ranging from UV to near infrared wavelength using our InSe nanosheet photodetectors. The detectivity of multilayer InSe devices is ~1012 to 1013 Jones, which surpasses that of the currently exploited InGaAs photodetectors (1011 to 1012 Jones). Finally, this research shows that multilayer InSe nanosheets are promising materials for high performance photodetectors.},
doi = {10.1039/C5TC01208B},
journal = {Journal of Materials Chemistry C},
number = 27,
volume = 3,
place = {United States},
year = {2015},
month = {5}
}

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