Effect of interfacial structures on spin dependent tunneling in epitaxial L10-FePt/MgO/FePt perpendicular magnetic tunnel junctions
Abstract
In this study, epitaxial FePt(001)/MgO/FePt magnetic tunnel junctions with L10-FePt electrodes showing perpendicular magnetic anisotropy were fabricated by molecular beam epitaxial growth. Tunnel magnetoresistance ratios of 21% and 53% were obtained at 300 K and 10 K, respectively. Our previous work, based on transmission electron microscopy, confirmed a semi-coherent interfacial structure with atomic steps (Kohn et al., APL 102, 062403 (2013)). Here, we show by x-ray photoemission spectroscopy and first-principles calculation that the bottom FePt/MgO interface is either Pt-terminated for regular growth or when an Fe layer is inserted at the interface, it is chemically bonded to O. Finally, both these structures have a dominant role in spin dependent tunneling across the MgO barrier resulting in a decrease of the tunneling magnetoresistance ratio compared with previous predictions.
- Authors:
-
[2];
- Chinese Academy of Sciences (CAS), Beijing (China). State Key Lab. of Magnetism. Beijing National Lab. for Condensed Matter Physics. Inst. of Physics
- Univ. of Oxford (United Kingdom). Clarendon Lab. Dept. of Physics
- Ben-Gurion Univ. of the Negev, Beer-Sheva (Israel). Dept. of Materials Engineering. Ilse Katz Inst. for Nanoscale Science and Technology
- Univ. of Florida, Gainesville, FL (United States). Dept. of Physics. Quantum Theory Project; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences. Computer Science and Mathematics Division
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- Contributing Org.:
- Chinese Academy of Sciences (CAS), Beijing (China); Ben-Gurion Univ. of the Negev, Beer-Sheva (Israel)
- OSTI Identifier:
- 1265531
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 117; Journal Issue: 8; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; interface structure; magnetic tunnel junctions; tunneling; epitaxy; electrodes
Citation Formats
Yang, G., Li, D. L., Wang, S. G., Ma, Q. L., Liang, S. H., Wei, H. X., Han, X. F., Hesjedal, T., Ward, R. C. C., Kohn, A., Elkayam, A., Tal, N., and Zhang, X. -G. Effect of interfacial structures on spin dependent tunneling in epitaxial L10-FePt/MgO/FePt perpendicular magnetic tunnel junctions. United States: N. p., 2015.
Web. doi:10.1063/1.4913265.
Yang, G., Li, D. L., Wang, S. G., Ma, Q. L., Liang, S. H., Wei, H. X., Han, X. F., Hesjedal, T., Ward, R. C. C., Kohn, A., Elkayam, A., Tal, N., & Zhang, X. -G. Effect of interfacial structures on spin dependent tunneling in epitaxial L10-FePt/MgO/FePt perpendicular magnetic tunnel junctions. United States. https://doi.org/10.1063/1.4913265
Yang, G., Li, D. L., Wang, S. G., Ma, Q. L., Liang, S. H., Wei, H. X., Han, X. F., Hesjedal, T., Ward, R. C. C., Kohn, A., Elkayam, A., Tal, N., and Zhang, X. -G. Tue .
"Effect of interfacial structures on spin dependent tunneling in epitaxial L10-FePt/MgO/FePt perpendicular magnetic tunnel junctions". United States. https://doi.org/10.1063/1.4913265. https://www.osti.gov/servlets/purl/1265531.
@article{osti_1265531,
title = {Effect of interfacial structures on spin dependent tunneling in epitaxial L10-FePt/MgO/FePt perpendicular magnetic tunnel junctions},
author = {Yang, G. and Li, D. L. and Wang, S. G. and Ma, Q. L. and Liang, S. H. and Wei, H. X. and Han, X. F. and Hesjedal, T. and Ward, R. C. C. and Kohn, A. and Elkayam, A. and Tal, N. and Zhang, X. -G.},
abstractNote = {In this study, epitaxial FePt(001)/MgO/FePt magnetic tunnel junctions with L10-FePt electrodes showing perpendicular magnetic anisotropy were fabricated by molecular beam epitaxial growth. Tunnel magnetoresistance ratios of 21% and 53% were obtained at 300 K and 10 K, respectively. Our previous work, based on transmission electron microscopy, confirmed a semi-coherent interfacial structure with atomic steps (Kohn et al., APL 102, 062403 (2013)). Here, we show by x-ray photoemission spectroscopy and first-principles calculation that the bottom FePt/MgO interface is either Pt-terminated for regular growth or when an Fe layer is inserted at the interface, it is chemically bonded to O. Finally, both these structures have a dominant role in spin dependent tunneling across the MgO barrier resulting in a decrease of the tunneling magnetoresistance ratio compared with previous predictions.},
doi = {10.1063/1.4913265},
journal = {Journal of Applied Physics},
number = 8,
volume = 117,
place = {United States},
year = {Tue Feb 24 00:00:00 EST 2015},
month = {Tue Feb 24 00:00:00 EST 2015}
}
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Works referencing / citing this record:
Influence of HfO 2 interlayers on magnetocrystalline anisotropy in Fe |MgO |Fe magnetic tunnel junction: First-principles investigation
journal, June 2019
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[Co/Ni] multilayers with robust post-annealing performance for spintronics device applications
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