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Title: Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films

Abstract

Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. In this paper, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δ1 spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. Finally, in this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices.

Authors:
 [1];  [1];  [1];  [2];  [2];  [3];  [4];  [4];  [1];  [1];  [1];  [1];  [1]
+ Show Author Affiliations
  1. Chinese Academy of Sciences (CAS), Beijing (China). State Key Lab. of Magnetism. Beijing National Lab. for Condensed Matter Physics. Inst. of Physics
  2. Univ. of Oxford (United Kingdom). Clarendon Lab. Dept. of Physics
  3. Univ. of Florida, Gainesville, FL (United States). Dept. of Physics. Quantum Theory Project; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences. Computer Science and Mathematics Division
  4. Ben-Gurion Univ. of the Negev, Beer-Sheva (Israel). Dept. of Materials Engineering. Ilse Katz Inst. for Nanoscale Science and Technology
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE
OSTI Identifier:
1265529
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 4; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; spintronics; information storage

Citation Formats

Li, D. L., Ma, Q. L., Wang, S. G., Ward, R. C. C., Hesjedal, T., Zhang, X. -G., Kohn, A., Amsellem, E., Yang, G., Liu, J. L., Jiang, J., Wei, H. X., and Han, X. F. Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films. United States: N. p., 2014. Web. doi:10.1038/srep07277.
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Li, D. L., Ma, Q. L., Wang, S. G., Ward, R. C. C., Hesjedal, T., Zhang, X. -G., Kohn, A., Amsellem, E., Yang, G., Liu, J. L., Jiang, J., Wei, H. X., & Han, X. F. Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films. United States. https://doi.org/10.1038/srep07277
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Li, D. L., Ma, Q. L., Wang, S. G., Ward, R. C. C., Hesjedal, T., Zhang, X. -G., Kohn, A., Amsellem, E., Yang, G., Liu, J. L., Jiang, J., Wei, H. X., and Han, X. F. Tue . "Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films". United States. https://doi.org/10.1038/srep07277. https://www.osti.gov/servlets/purl/1265529.
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@article{osti_1265529,
title = {Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films},
author = {Li, D. L. and Ma, Q. L. and Wang, S. G. and Ward, R. C. C. and Hesjedal, T. and Zhang, X. -G. and Kohn, A. and Amsellem, E. and Yang, G. and Liu, J. L. and Jiang, J. and Wei, H. X. and Han, X. F.},
abstractNote = {Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. In this paper, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δ1 spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. Finally, in this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices.},
doi = {10.1038/srep07277},
journal = {Scientific Reports},
number = ,
volume = 4,
place = {United States},
year = {Tue Dec 02 00:00:00 EST 2014},
month = {Tue Dec 02 00:00:00 EST 2014}
}
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https://doi.org/10.1038/srep07277
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    Works referencing / citing this record:

    Band-pass Fabry-Pèrot magnetic tunnel junctions
    journal, May 2018

    • Sharma, Abhishek; Tulapurkar, Ashwin. A.; Muralidharan, Bhaskaran
    • Applied Physics Letters, Vol. 112, Issue 19
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    Electron tunneling properties of Al 2 O 3 tunnel barrier made using atomic layer deposition in multilayer devices
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    • Goul, Ryan; Wilt, Jamie; Acharya, Jagaran
    • AIP Advances, Vol. 9, Issue 2
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    journal, June 2016

    • Liu, Peisheng; Wang, Hao; Chen, Jun
    • Scientific Reports, Vol. 6, Issue 1
    • DOI: 10.1038/srep28131
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