Finite size effects in ferroelectric-semiconductor thin films under open-circuit electric boundary conditions
Abstract
General features of finite size effects in the ferroelectric-semiconductor film under open-circuit electric boundary conditions are analyzed using Landau-Ginzburg-Devonshire theory and continuum media electrostatics. The temperature dependence of the film critical thickness, spontaneous polarization and depolarization field profiles of the open-circuited films are found to be significantly different from the characteristics of short-circuited ones. In particular, we predict the re-entrant type transition boundary between the mono-domain and poly-domain ferroelectric states due to reduced internal screening efficiency and analyzed possible experimental scenarios created by this mechanism. Performed analysis is relevant for the quantitative description of free-standing ferroelectric films phase diagrams and polar properties. Also our results can be useful for the explanation of the scanning-probe microscopy experiments on free ferroelectric surfaces.
- Authors:
-
[2];
- NAS of Ukraine, Kyiv (Ukraine). Inst. of Problems for Material Sciences
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
- NAS of Ukraine, Kyiv (Ukraine). Inst. of Physics
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1265460
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 117; Journal Issue: 3; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Citation Formats
Eliseev, Eugene A., Kalinin, Sergei V., and Morozovska, Anna N. Finite size effects in ferroelectric-semiconductor thin films under open-circuit electric boundary conditions. United States: N. p., 2015.
Web. doi:10.1063/1.4906139.
Eliseev, Eugene A., Kalinin, Sergei V., & Morozovska, Anna N. Finite size effects in ferroelectric-semiconductor thin films under open-circuit electric boundary conditions. United States. https://doi.org/10.1063/1.4906139
Eliseev, Eugene A., Kalinin, Sergei V., and Morozovska, Anna N. Wed .
"Finite size effects in ferroelectric-semiconductor thin films under open-circuit electric boundary conditions". United States. https://doi.org/10.1063/1.4906139. https://www.osti.gov/servlets/purl/1265460.
@article{osti_1265460,
title = {Finite size effects in ferroelectric-semiconductor thin films under open-circuit electric boundary conditions},
author = {Eliseev, Eugene A. and Kalinin, Sergei V. and Morozovska, Anna N.},
abstractNote = {General features of finite size effects in the ferroelectric-semiconductor film under open-circuit electric boundary conditions are analyzed using Landau-Ginzburg-Devonshire theory and continuum media electrostatics. The temperature dependence of the film critical thickness, spontaneous polarization and depolarization field profiles of the open-circuited films are found to be significantly different from the characteristics of short-circuited ones. In particular, we predict the re-entrant type transition boundary between the mono-domain and poly-domain ferroelectric states due to reduced internal screening efficiency and analyzed possible experimental scenarios created by this mechanism. Performed analysis is relevant for the quantitative description of free-standing ferroelectric films phase diagrams and polar properties. Also our results can be useful for the explanation of the scanning-probe microscopy experiments on free ferroelectric surfaces.},
doi = {10.1063/1.4906139},
journal = {Journal of Applied Physics},
number = 3,
volume = 117,
place = {United States},
year = {Wed Jan 21 00:00:00 EST 2015},
month = {Wed Jan 21 00:00:00 EST 2015}
}
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