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Title: Monolayer semiconductor nanocavity lasers with ultralow thresholds

Abstract

Engineering the electromagnetic environment of a nanoscale light emitter by a photonic cavity can significantly enhance its spontaneous emission rate through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter1–5, providing the ultimate low-threshold laser system with small footprint, low power consumption and ultrafast modulation. A state-of-the-art ultra-low threshold nanolaser has been successfully developed though embedding quantum dots into photonic crystal cavity (PhCC)6–8. However, several core challenges impede the practical applications of this architecture, including the random positions and compositional fluctuations of the dots7, extreme difficulty in current injection8, and lack of compatibility with electronic circuits7,8. Here, we report a new strategy to lase, where atomically thin crystalline semiconductor, i.e., a tungsten-diselenide (WSe2) monolayer, is nondestructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PhCC. A new type of continuous-wave nanolaser operating in the visible regime is achieved with an optical pumping threshold as low as 27 nW at 130 K, similar to the value achieved in quantum dot PhCC lasers7. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within 1 nm of themore » PhCC surface. The surface-gain geometry allows unprecedented accessibilities to multi-functionalize the gain, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.« less

Authors:
 [1];  [2];  [1];  [3];  [4];  [5];  [6];  [7];  [2];  [8];  [9]
  1. Univ. of Washington, Seattle, WA (United States). Dept. of Physics
  2. Stanford Univ., CA (United States). Ginzton Lab.
  3. Univ. of Washington, Seattle, WA (United States). Dept. of Physics; Tianjin Univ., Tianjin (China). Key Dept. of Applied Physics
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy
  6. Humboldt Univ. of Berlin (Germany). Dept. of Physics
  7. Univ. of Hong Kong, Hong Kong (China). Dept. of Physics and Center of Theoretical and Computational Physics
  8. Univ. of Washington, Seattle, WA (United States). Dept. of Electrical Engineering
  9. Univ. of Washington, Seattle, WA (United States). Dept. of Physics; Univ. of Washington, Seattle, WA (United States). Dept. of Material Science and Engineering
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1265430
Grant/Contract Number:  
AC05-00OR22725; FA9550-14-1-0277; EFRI-1433496; ECS-9731293; N00014-08-1-0561; FP7-ICT-2013-613024-GRASP
Resource Type:
Accepted Manuscript
Journal Name:
Nature (London)
Additional Journal Information:
Journal Name: Nature (London); Journal Volume: 520; Journal Issue: 7545; Journal ID: ISSN 0028-0836
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Wu, Sanfeng, Buckley, Sonia, Schaibley, John R., Feng, Liefeng, Yan, Jiaqiang, Mandrus, David G., Hatami, Fariba, Yao, Wang, Vučković, Jelena, Majumdar, Arka, and Xu, Xiaodong. Monolayer semiconductor nanocavity lasers with ultralow thresholds. United States: N. p., 2015. Web. doi:10.1038/nature14290.
Wu, Sanfeng, Buckley, Sonia, Schaibley, John R., Feng, Liefeng, Yan, Jiaqiang, Mandrus, David G., Hatami, Fariba, Yao, Wang, Vučković, Jelena, Majumdar, Arka, & Xu, Xiaodong. Monolayer semiconductor nanocavity lasers with ultralow thresholds. United States. https://doi.org/10.1038/nature14290
Wu, Sanfeng, Buckley, Sonia, Schaibley, John R., Feng, Liefeng, Yan, Jiaqiang, Mandrus, David G., Hatami, Fariba, Yao, Wang, Vučković, Jelena, Majumdar, Arka, and Xu, Xiaodong. Mon . "Monolayer semiconductor nanocavity lasers with ultralow thresholds". United States. https://doi.org/10.1038/nature14290. https://www.osti.gov/servlets/purl/1265430.
@article{osti_1265430,
title = {Monolayer semiconductor nanocavity lasers with ultralow thresholds},
author = {Wu, Sanfeng and Buckley, Sonia and Schaibley, John R. and Feng, Liefeng and Yan, Jiaqiang and Mandrus, David G. and Hatami, Fariba and Yao, Wang and Vučković, Jelena and Majumdar, Arka and Xu, Xiaodong},
abstractNote = {Engineering the electromagnetic environment of a nanoscale light emitter by a photonic cavity can significantly enhance its spontaneous emission rate through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter1–5, providing the ultimate low-threshold laser system with small footprint, low power consumption and ultrafast modulation. A state-of-the-art ultra-low threshold nanolaser has been successfully developed though embedding quantum dots into photonic crystal cavity (PhCC)6–8. However, several core challenges impede the practical applications of this architecture, including the random positions and compositional fluctuations of the dots7, extreme difficulty in current injection8, and lack of compatibility with electronic circuits7,8. Here, we report a new strategy to lase, where atomically thin crystalline semiconductor, i.e., a tungsten-diselenide (WSe2) monolayer, is nondestructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PhCC. A new type of continuous-wave nanolaser operating in the visible regime is achieved with an optical pumping threshold as low as 27 nW at 130 K, similar to the value achieved in quantum dot PhCC lasers7. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within 1 nm of the PhCC surface. The surface-gain geometry allows unprecedented accessibilities to multi-functionalize the gain, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.},
doi = {10.1038/nature14290},
journal = {Nature (London)},
number = 7545,
volume = 520,
place = {United States},
year = {Mon Mar 16 00:00:00 EDT 2015},
month = {Mon Mar 16 00:00:00 EDT 2015}
}

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Hybrid silicon nonlinear photonics [Invited]
journal, January 2018


Excitons in atomically thin 2D semiconductors and their applications
journal, June 2017


Advances in quantum light emission from 2D materials
journal, August 2019

  • Chakraborty, Chitraleema; Vamivakas, Nick; Englund, Dirk
  • Nanophotonics, Vol. 8, Issue 11
  • DOI: 10.1515/nanoph-2019-0140

Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures
journal, October 2016

  • Lee, Jae; Shin, Jun-Hwan; Lee, Gwan-Hyoung
  • Nanomaterials, Vol. 6, Issue 11
  • DOI: 10.3390/nano6110193

High-Quality Whispering-Gallery-Mode Lasing from Cesium Lead Halide Perovskite Nanoplatelets
journal, July 2016

  • Zhang, Qing; Su, Rui; Liu, Xinfeng
  • Advanced Functional Materials, Vol. 26, Issue 34
  • DOI: 10.1002/adfm.201601690

All-Layered 2D Optoelectronics: A High-Performance UV-vis-NIR Broadband SnSe Photodetector with Bi 2 Te 3 Topological Insulator Electrodes
journal, July 2017

  • Yao, Jiandong; Zheng, Zhaoqiang; Yang, Guowei
  • Advanced Functional Materials, Vol. 27, Issue 33
  • DOI: 10.1002/adfm.201701823

Engineering Bandgaps of Monolayer MoS 2 and WS 2 on Fluoropolymer Substrates by Electrostatically Tuned Many-Body Effects
journal, May 2016


Isoelectronic Tungsten Doping in Monolayer MoSe 2 for Carrier Type Modulation
journal, July 2016

  • Li, Xufan; Lin, Ming-Wei; Basile, Leonardo
  • Advanced Materials, Vol. 28, Issue 37
  • DOI: 10.1002/adma.201601991

Resonantly Increased Optical Frequency Conversion in Atomically Thin Black Phosphorus
journal, October 2016

  • Rodrigues, Manuel J. L. F.; de Matos, Christiano J. S.; Ho, Yi Wei
  • Advanced Materials, Vol. 28, Issue 48
  • DOI: 10.1002/adma.201603119

Etching Techniques in 2D Materials
journal, May 2019

  • He, Ting; Wang, Zhen; Zhong, Fang
  • Advanced Materials Technologies, Vol. 4, Issue 8
  • DOI: 10.1002/admt.201900064

2D Material Microcavity Light Emitters: To Lase or Not to Lase?
journal, July 2018

  • Reeves, Lewis; Wang, Yue; Krauss, Thomas F.
  • Advanced Optical Materials, Vol. 6, Issue 19
  • DOI: 10.1002/adom.201800272

Chiral Coupling of Valley Excitons and Light through Photonic Spin–Orbit Interactions
journal, November 2019

  • Chen, Peigang; Lo, Tsz Wing; Fan, Yulong
  • Advanced Optical Materials, Vol. 8, Issue 5
  • DOI: 10.1002/adom.201901233

Giant photoluminescence enhancement in tungsten-diselenide–gold plasmonic hybrid structures
journal, May 2016

  • Wang, Zhuo; Dong, Zhaogang; Gu, Yinghong
  • Nature Communications, Vol. 7, Issue 1
  • DOI: 10.1038/ncomms11283

Exciton–polaritons in van der Waals heterostructures embedded in tunable microcavities
journal, October 2015

  • Dufferwiel, S.; Schwarz, S.; Withers, F.
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms9579

Room-temperature 2D semiconductor activated vertical-cavity surface-emitting lasers
journal, September 2017


Large-area and bright pulsed electroluminescence in monolayer semiconductors
journal, March 2018


All-optical control and super-resolution imaging of quantum emitters in layered materials
journal, February 2018


Magnetic Field Enhanced Superconductivity in Epitaxial Thin Film WTe2
journal, April 2018


Two-dimensional light-emitting materials: preparation, properties and applications
journal, January 2018

  • Wang, Zhiwei; Jingjing, Qiu; Wang, Xiaoshan
  • Chemical Society Reviews, Vol. 47, Issue 16
  • DOI: 10.1039/c8cs00332g

Investigating the dynamics of excitons in monolayer WSe 2 before and after organic super acid treatment
journal, January 2018


Towards the evaluation of defects in MoS 2 using cryogenic photoluminescence spectroscopy
journal, January 2020

  • Verhagen, Tim; Guerra, Valentino L. P.; Haider, Golam
  • Nanoscale, Vol. 12, Issue 5
  • DOI: 10.1039/c9nr07246b

Strong coupling between Tamm plasmon polariton and two dimensional semiconductor excitons
journal, January 2017

  • Hu, Tao; Wang, Yafeng; Wu, Lin
  • Applied Physics Letters, Vol. 110, Issue 5
  • DOI: 10.1063/1.4974901

Advanced photonic filters based on cascaded Sagnac loop reflector resonators in silicon-on-insulator nanowires
journal, April 2018

  • Wu, Jiayang; Moein, Tania; Xu, Xingyuan
  • APL Photonics, Vol. 3, Issue 4
  • DOI: 10.1063/1.5025833

Semiconductor plasmonic nanolasers: current status and perspectives
journal, July 2016


Different regimes of the Purcell effect in disordered photonic crystals
journal, October 2018

  • Morozov, K. M.; Girshova, E. I.; Gubaidullin, A. R.
  • Journal of Physics: Condensed Matter, Vol. 30, Issue 43
  • DOI: 10.1088/1361-648x/aae18c

Dynamical screening in monolayer transition-metal dichalcogenides and its manifestations in the exciton spectrum
journal, March 2019

  • Scharf, Benedikt; Van Tuan, Dinh; Žutić, Igor
  • Journal of Physics: Condensed Matter, Vol. 31, Issue 20
  • DOI: 10.1088/1361-648x/ab071f

Inhomogeneous photocarrier dynamics and transport in monolayer MoS 2 by ultrafast microscopy
journal, September 2019


Photoluminescence of two-dimensional GaTe and GaSe films
journal, July 2015


MoS 2 monolayers on nanocavities: enhancement in light–matter interaction
journal, April 2016


Electrically pumped single-defect light emitters in WSe 2
journal, June 2016


Nonequilibrium carrier dynamics in transition metal dichalcogenide semiconductors
journal, August 2016


Review: application of transition metal dichalcogenide in pulsed fiber laser system
journal, May 2019


Probing exciton species in atomically thin WS 2 –graphene heterostructures
journal, February 2019

  • Giusca, Cristina E.; Lin, Zhong; Terrones, Mauricio
  • Journal of Physics: Materials, Vol. 2, Issue 2
  • DOI: 10.1088/2515-7639/aafddb

Explaining observed stability of excitons in highly excited CdSe nanoplatelets
journal, December 2019

  • García Flórez, F.; Kulkarni, Aditya; Siebbeles, Laurens D. A.
  • Physical Review B, Vol. 100, Issue 24
  • DOI: 10.1103/physrevb.100.245302

Optical identification of sulfur vacancies: Bound excitons at the edges of monolayer tungsten disulfide
journal, April 2017

  • Carozo, Victor; Wang, Yuanxi; Fujisawa, Kazunori
  • Science Advances, Vol. 3, Issue 4
  • DOI: 10.1126/sciadv.1602813

Near-unity photoluminescence quantum yield in MoS2
journal, November 2015


Robust epitaxial growth of two-dimensional heterostructures, multiheterostructures, and superlattices
journal, August 2017


Quantum Emission from Hexagonal Boron Nitride Monolayers
conference, January 2016

  • Tran, Toan Trong; Bray, Kerem; Ford, Michael J.
  • CLEO: QELS_Fundamental Science, Conference on Lasers and Electro-Optics
  • DOI: 10.1364/cleo_qels.2016.ftu4d.1

Making few-layer graphene photoluminescent by UV ozonation
journal, January 2016

  • Zhang, Ziyu; Tao, Haihua; Li, Hao
  • Optical Materials Express, Vol. 6, Issue 11
  • DOI: 10.1364/ome.6.003527

Surface Plasmon Nanolaser: Principle, Structure, Characteristics and Applications
journal, February 2019

  • Xu, Litu; Li, Fang; Liu, Yahui
  • Applied Sciences, Vol. 9, Issue 5
  • DOI: 10.3390/app9050861

Manipulation of photoluminescence of two-dimensional MoSe₂ by gold nanoantennas
text, January 2016


Versatile Crystal Structures and (Opto)electronic Applications of the 2D Metal Mono‐, Di‐, and Tri‐Chalcogenide Nanosheets
journal, March 2019


Nonlinear Optics with 2D Layered Materials
journal, March 2018

  • Autere, Anton; Jussila, Henri; Dai, Yunyun
  • Advanced Materials, Vol. 30, Issue 24
  • DOI: 10.1002/adma.201705963

Inorganic 2D Luminescent Materials: Structure, Luminescence Modulation, and Applications
journal, October 2019


Valleytronics in 2D materials
journal, August 2016


Ultrafast response of monolayer molybdenum disulfide photodetectors
journal, November 2015

  • Wang, Haining; Zhang, Changjian; Chan, Weimin
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms9831

Substrate induced changes in atomically thin 2-dimensional semiconductors: Fundamentals, engineering, and applications
journal, March 2017

  • Sun, Yinghui; Wang, Rongming; Liu, Kai
  • Applied Physics Reviews, Vol. 4, Issue 1
  • DOI: 10.1063/1.4974072

On-chip integrated photonic circuits based on two-dimensional materials and hexagonal boron nitride as the optical confinement layer
journal, June 2019

  • Ren, Tianhua; Loh, Kian Ping
  • Journal of Applied Physics, Vol. 125, Issue 23
  • DOI: 10.1063/1.5096195

Radiative lifetime of localized excitons in transition-metal dichalcogenides
journal, November 2018


Monolayer MoS2 for nanoscale photonics
journal, February 2020


Enhancing monolayer photoluminescence on optical micro/nanofibers for low-threshold lasing.
text, January 2019

  • Liao, Feng; Yu, Jiaxin; Gu, Zhaoqi
  • Apollo - University of Cambridge Repository
  • DOI: 10.17863/cam.47548

Suppression of Defects and Deep Levels Using Isoelectronic Tungsten Substitution in Monolayer MoSe 2
journal, October 2016

  • Li, Xufan; Puretzky, Alexander A.; Sang, Xiahan
  • Advanced Functional Materials, Vol. 27, Issue 19
  • DOI: 10.1002/adfm.201603850

Photodetectors Based on Two-Dimensional Layered Materials Beyond Graphene
journal, November 2016

  • Xie, Chao; Mak, Chunhin; Tao, Xiaoming
  • Advanced Functional Materials, Vol. 27, Issue 19
  • DOI: 10.1002/adfm.201603886

2D Layered Material-Based van der Waals Heterostructures for Optoelectronics
journal, January 2018

  • Zhou, Xing; Hu, Xiaozong; Yu, Jing
  • Advanced Functional Materials, Vol. 28, Issue 14
  • DOI: 10.1002/adfm.201706587

Light-Emitting Transition Metal Dichalcogenide Monolayers under Cellular Digestion
journal, January 2018


Many-Body Complexes in 2D Semiconductors
journal, August 2018


Wavelength‐Tunable Micro/Nanolasers
journal, June 2019

  • Zhuge, Ming‐Hua; Pan, Caofeng; Zheng, Yazhi
  • Advanced Optical Materials, Vol. 7, Issue 17
  • DOI: 10.1002/adom.201900275

Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions
journal, December 2017


Strain relaxation via formation of cracks in compositionally modulated two-dimensional semiconductor alloys
journal, April 2018

  • Taghinejad, Hossein; Eftekhar, Ali A.; Campbell, Philip M.
  • npj 2D Materials and Applications, Vol. 2, Issue 1
  • DOI: 10.1038/s41699-018-0056-4

Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors
journal, September 2018


Quantum dot micropillar lasers
journal, June 2019

  • Gies, Christopher; Reitzenstein, Stephan
  • Semiconductor Science and Technology, Vol. 34, Issue 7
  • DOI: 10.1088/1361-6641/ab1551

Optical third harmonic generation in black phosphorus
journal, January 2018


Enhancing monolayer photoluminescence on optical micro/nanofibers for low-threshold lasing
journal, November 2019


Hybrid 2D‐Material Photonics with Bound States in the Continuum
journal, September 2019


Quantum emission from hexagonal boron nitride monolayers
journal, October 2015

  • Tran, Toan Trong; Bray, Kerem; Ford, Michael J.
  • Nature Nanotechnology, Vol. 11, Issue 1
  • DOI: 10.1038/nnano.2015.242

Lasing from Mechanically Exfoliated 2D Homologous Ruddlesden–Popper Perovskite Engineered by Inorganic Layer Thickness
journal, August 2019


Tin dioxide quantum dots coupled with graphene for high-performance bulk-silicon Schottky photodetector
journal, January 2018

  • Zheng, Zhaoqiang; Yao, Jiandong; Zhu, Lianfeng
  • Materials Horizons, Vol. 5, Issue 4
  • DOI: 10.1039/c8mh00500a

Vertical beaming of incoherent quantum emitters via the near-field coupling of Fano resonance
journal, January 2018

  • Hwang, Dae-Woong; Moon, Yoon-Jong; Cho, Jin-Woo
  • Optics Letters, Vol. 43, Issue 20
  • DOI: 10.1364/ol.43.005114

Second-order coherence properties of metallic nanolasers
journal, January 2016

  • Hayenga, William E.; Garcia-Gracia, Hipolito; Hodaei, Hossein
  • Optica, Vol. 3, Issue 11
  • DOI: 10.1364/optica.3.001187

Exciton Radiative Lifetime in Transition Metal Dichalcogenide Monolayers
text, January 2016


Nonequilibrium Carrier Dynamics in Transition Metal Dichalcogenide Semiconductors
text, January 2016


Deterministic generation of all-photonic quantum repeaters from solid-state emitters
text, January 2016


Different regimes of Purcell Effect in Disordered Photonic Crystals
text, January 2018


Colloquium : Excitons in atomically thin transition metal dichalcogenides
text, January 2018

  • Wang, Gang; Chernikov, Alexey; Glazov, Mikhail M.
  • Universität Regensburg
  • DOI: 10.5283/epub.40518

Excitonic Emission of Monolayer Semiconductors Near-Field Coupled to High-Q Microresonators
journal, April 2018


Tunable and enhanced light emission in hybrid WS2-optical-fiber-nanowire structures
journal, January 2019


Excitonic complexes and optical gain in two-dimensional molybdenum ditelluride well below the Mott transition
journal, March 2020


Large-area and bright pulsed electroluminescence in monolayer semiconductors
journal, March 2018


All-optical control and super-resolution imaging of quantum emitters in layered materials
journal, February 2018


Photonic crystal cavities from hexagonal boron nitride
journal, July 2018


Enhanced light-matter interaction in an atomically thin semiconductor coupled with dielectric nano-antennas
journal, November 2019


Magnetic Field Enhanced Superconductivity in Epitaxial Thin Film WTe2
journal, April 2018


Flat-band localization and self-collimation of light in photonic crystals
journal, February 2019


Plasmonic Gold Nanorods Coverage Influence on Enhancement of the Photoluminescence of Two-Dimensional MoS2 Monolayer
journal, November 2015

  • Lee, Kevin C. J.; Chen, Yi-Huan; Lin, Hsiang-Yu
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep16374

Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures
journal, October 2016

  • Lee, Jae; Shin, Jun-Hwan; Lee, Gwan-Hyoung
  • Nanomaterials, Vol. 6, Issue 11
  • DOI: 10.3390/nano6110193