skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Growth Mode Transition in Complex Oxide Heteroepitaxy: Atomically Resolved Studies

Abstract

Here we performed investigations of the atomic-scale surface structure of epitaxial La5/8Ca3/8MnO3 thin films as a model system dependent on growth conditions in pulsed laser deposition with emphasis on film growth kinetics. Postdeposition in situ scanning tunneling microscopy was combined with in operando reflective high-energy electron diffraction to monitor the film growth and ex situ X-ray diffraction for structural analysis. We find a correlation between the out-of-plane lattice parameter and both adspecies mobility and height of the Ehrlich–Schwoebel barrier, with mobility of adatoms greater over the cationically stoichiometric terminations. We find that the data suggest that the out-of-plane lattice parameter is dependent on the mechanism of epitaxial strain relaxation, which is controlled by the oxidative power of the deposition environment.

Authors:
 [1];  [1];  [2];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. Univ. of Tennessee, Knoxville, TN (United States). Bredesen Center
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1263837
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Crystal Growth and Design
Additional Journal Information:
Journal Volume: 16; Journal Issue: 5; Journal ID: ISSN 1528-7483
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Manganites; Scanning Tunelling Microscopy; Growth mechanisms; pulsed laser deposition; epitaxial thin film

Citation Formats

Tselev, Alexander, Vasudevan, Rama K., Gianfrancesco, Anthony G., Qiao, Liang, Meyer, Tricia L., Lee, Ho Nyung, Biegalski, Michael D., Baddorf, Arthur P., and Kalinin, Sergei V. Growth Mode Transition in Complex Oxide Heteroepitaxy: Atomically Resolved Studies. United States: N. p., 2016. Web. doi:10.1021/acs.cgd.5b01826.
Tselev, Alexander, Vasudevan, Rama K., Gianfrancesco, Anthony G., Qiao, Liang, Meyer, Tricia L., Lee, Ho Nyung, Biegalski, Michael D., Baddorf, Arthur P., & Kalinin, Sergei V. Growth Mode Transition in Complex Oxide Heteroepitaxy: Atomically Resolved Studies. United States. doi:10.1021/acs.cgd.5b01826.
Tselev, Alexander, Vasudevan, Rama K., Gianfrancesco, Anthony G., Qiao, Liang, Meyer, Tricia L., Lee, Ho Nyung, Biegalski, Michael D., Baddorf, Arthur P., and Kalinin, Sergei V. Mon . "Growth Mode Transition in Complex Oxide Heteroepitaxy: Atomically Resolved Studies". United States. doi:10.1021/acs.cgd.5b01826. https://www.osti.gov/servlets/purl/1263837.
@article{osti_1263837,
title = {Growth Mode Transition in Complex Oxide Heteroepitaxy: Atomically Resolved Studies},
author = {Tselev, Alexander and Vasudevan, Rama K. and Gianfrancesco, Anthony G. and Qiao, Liang and Meyer, Tricia L. and Lee, Ho Nyung and Biegalski, Michael D. and Baddorf, Arthur P. and Kalinin, Sergei V.},
abstractNote = {Here we performed investigations of the atomic-scale surface structure of epitaxial La5/8Ca3/8MnO3 thin films as a model system dependent on growth conditions in pulsed laser deposition with emphasis on film growth kinetics. Postdeposition in situ scanning tunneling microscopy was combined with in operando reflective high-energy electron diffraction to monitor the film growth and ex situ X-ray diffraction for structural analysis. We find a correlation between the out-of-plane lattice parameter and both adspecies mobility and height of the Ehrlich–Schwoebel barrier, with mobility of adatoms greater over the cationically stoichiometric terminations. We find that the data suggest that the out-of-plane lattice parameter is dependent on the mechanism of epitaxial strain relaxation, which is controlled by the oxidative power of the deposition environment.},
doi = {10.1021/acs.cgd.5b01826},
journal = {Crystal Growth and Design},
number = 5,
volume = 16,
place = {United States},
year = {2016},
month = {4}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 3 works
Citation information provided by
Web of Science

Save / Share: