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Title: Growth Mode Transition in Complex Oxide Heteroepitaxy: Atomically Resolved Studies

Here we performed investigations of the atomic-scale surface structure of epitaxial La 5/8Ca 3/8MnO 3 thin films as a model system dependent on growth conditions in pulsed laser deposition with emphasis on film growth kinetics. Postdeposition in situ scanning tunneling microscopy was combined with in operando reflective high-energy electron diffraction to monitor the film growth and ex situ X-ray diffraction for structural analysis. We find a correlation between the out-of-plane lattice parameter and both adspecies mobility and height of the Ehrlich–Schwoebel barrier, with mobility of adatoms greater over the cationically stoichiometric terminations. We find that the data suggest that the out-of-plane lattice parameter is dependent on the mechanism of epitaxial strain relaxation, which is controlled by the oxidative power of the deposition environment.
 [1] ;  [1] ;  [2] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. Univ. of Tennessee, Knoxville, TN (United States). Bredesen Center
Publication Date:
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Crystal Growth and Design
Additional Journal Information:
Journal Volume: 16; Journal Issue: 5; Journal ID: ISSN 1528-7483
American Chemical Society
Research Org:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
36 MATERIALS SCIENCE; Manganites; Scanning Tunelling Microscopy; Growth mechanisms; pulsed laser deposition; epitaxial thin film
OSTI Identifier: