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Title: Self-heating and failure in scalable graphene devices

Abstract

Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure than their epitaxial counterparts. The discrepancy arises due to morphological irregularities implicit to the graphene synthesis method that induce localized heating. As a result, morphology, rather than thermal resistance, therefore dictates power handling limits in graphene devices.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1262367
Alternate Identifier(s):
OSTI ID: 1338306
Report Number(s):
SAND-2016-3093J; SAND-2015-10741J
Journal ID: ISSN 2045-2322; srep26457
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; electronic properties and devices; synthesis and processing; 36 MATERIALS SCIENCE

Citation Formats

Beechem, Thomas E., Shaffer, Ryan A., Nogan, John, Ohta, Taisuke, Hamilton, Allister B., McDonald, Anthony E., and Howell, Stephen W. Self-heating and failure in scalable graphene devices. United States: N. p., 2016. Web. doi:10.1038/srep26457.
Beechem, Thomas E., Shaffer, Ryan A., Nogan, John, Ohta, Taisuke, Hamilton, Allister B., McDonald, Anthony E., & Howell, Stephen W. Self-heating and failure in scalable graphene devices. United States. doi:10.1038/srep26457.
Beechem, Thomas E., Shaffer, Ryan A., Nogan, John, Ohta, Taisuke, Hamilton, Allister B., McDonald, Anthony E., and Howell, Stephen W. Thu . "Self-heating and failure in scalable graphene devices". United States. doi:10.1038/srep26457. https://www.osti.gov/servlets/purl/1262367.
@article{osti_1262367,
title = {Self-heating and failure in scalable graphene devices},
author = {Beechem, Thomas E. and Shaffer, Ryan A. and Nogan, John and Ohta, Taisuke and Hamilton, Allister B. and McDonald, Anthony E. and Howell, Stephen W.},
abstractNote = {Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure than their epitaxial counterparts. The discrepancy arises due to morphological irregularities implicit to the graphene synthesis method that induce localized heating. As a result, morphology, rather than thermal resistance, therefore dictates power handling limits in graphene devices.},
doi = {10.1038/srep26457},
journal = {Scientific Reports},
number = ,
volume = 6,
place = {United States},
year = {2016},
month = {6}
}

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Cited by: 3 works
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