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Title: Self-heating and failure in scalable graphene devices

Abstract

Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure than their epitaxial counterparts. Furthermore, the discrepancy arises due to morphological irregularities implicit to the graphene synthesis method that induce localized heating. Morphology, rather than thermal resistance, therefore dictates power handling limits in graphene devices.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1262367
Alternate Identifier(s):
OSTI ID: 1338306
Report Number(s):
SAND-2016-3093J; SAND-2015-10741J
Journal ID: ISSN 2045-2322; srep26457
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; electronic properties and devices; synthesis and processing; 36 MATERIALS SCIENCE

Citation Formats

Beechem, Thomas E., Shaffer, Ryan A., Nogan, John, Ohta, Taisuke, Hamilton, Allister B., McDonald, Anthony E., and Howell, Stephen W. Self-heating and failure in scalable graphene devices. United States: N. p., 2016. Web. doi:10.1038/srep26457.
Beechem, Thomas E., Shaffer, Ryan A., Nogan, John, Ohta, Taisuke, Hamilton, Allister B., McDonald, Anthony E., & Howell, Stephen W. Self-heating and failure in scalable graphene devices. United States. https://doi.org/10.1038/srep26457
Beechem, Thomas E., Shaffer, Ryan A., Nogan, John, Ohta, Taisuke, Hamilton, Allister B., McDonald, Anthony E., and Howell, Stephen W. Thu . "Self-heating and failure in scalable graphene devices". United States. https://doi.org/10.1038/srep26457. https://www.osti.gov/servlets/purl/1262367.
@article{osti_1262367,
title = {Self-heating and failure in scalable graphene devices},
author = {Beechem, Thomas E. and Shaffer, Ryan A. and Nogan, John and Ohta, Taisuke and Hamilton, Allister B. and McDonald, Anthony E. and Howell, Stephen W.},
abstractNote = {Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure than their epitaxial counterparts. Furthermore, the discrepancy arises due to morphological irregularities implicit to the graphene synthesis method that induce localized heating. Morphology, rather than thermal resistance, therefore dictates power handling limits in graphene devices.},
doi = {10.1038/srep26457},
journal = {Scientific Reports},
number = ,
volume = 6,
place = {United States},
year = {2016},
month = {6}
}

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Works referencing / citing this record:

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