Self-heating and failure in scalable graphene devices

Beechem, Thomas E.; Shaffer, Ryan A.; Nogan, John; Ohta, Taisuke; Hamilton, Allister B.; McDonald, Anthony E.; Howell, Stephen W.

doi:10.1038/srep26457

Title: Self-heating and failure in scalable graphene devices

Journal Article · 09 June 2016 · Scientific Reports

DOI: https://doi.org/10.1038/srep26457 · OSTI ID:1262367

Beechem, Thomas E. ^[1]; Shaffer, Ryan A. ^[1]; Nogan, John ^[1]; Ohta, Taisuke ^[1]; Hamilton, Allister B. ^[1]; McDonald, Anthony E. ^[1]; Howell, Stephen W. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure than their epitaxial counterparts. The discrepancy arises due to morphological irregularities implicit to the graphene synthesis method that induce localized heating. As a result, morphology, rather than thermal resistance, therefore dictates power handling limits in graphene devices.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1262367

Alternate ID(s):: OSTI ID: 1338306

Report Number(s):: SAND-2016-3093J; SAND-2015-10741J; srep26457

Journal Information:: Scientific Reports, Vol. 6; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 19 works

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Title: Self-heating and failure in scalable graphene devices

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