Amorphization resistance of nano-engineered SiC under heavy ion irradiation

Imada, Kenta; Ishimaru, Manabu; Xue, Haizhou; Zhang, Yanwen; Shannon, Steven C.; Weber, William J.

doi:10.1016/j.jnucmat.2016.06.031

Title: Amorphization resistance of nano-engineered SiC under heavy ion irradiation

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Abstract

Silicon carbide (SiC) with a high-density of planar defects (hereafter, ‘nano-engineered SiC’) and epitaxially-grown single-crystalline 3C-SiC were simultaneously irradiated with Au ions at room temperature, in order to compare their relative resistance to radiation-induced amorphization. Furthermore, it was found that the local threshold dose for amorphization is comparable for both samples under 2 MeV Au ion irradiation; whereas, nano-engineered SiC exhibits slightly greater radiation tolerance than single crystalline SiC under 10 MeV Au irradiation. Under 10 MeV Au ion irradiation, the dose for amorphization increased by about a factor of two in both nano-engineered and single crystal SiC due to the local increase in electronic energy loss that enhanced dynamic recovery.

Authors:

Imada, Kenta ^[1]; Ishimaru, Manabu ^[1]; Xue, Haizhou ^[2]; Zhang, Yanwen ^[3]; Shannon, Steven C. ^[4]; Weber, William J. ^[3]

Kyushu Institute of Technology, Fukuoka (Japan)
Univ. of Tennessee, Knoxville, TN (United States)
Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
North Carolina State Univ., Raleigh, NC (United States)

Publication Date:: Sun Jun 19 00:00:00 EDT 2016

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1261569

Alternate Identifier(s):: OSTI ID: 1325327

Grant/Contract Number:: AC05-00OR22725

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Nuclear Materials

Additional Journal Information:: Journal Volume: 478; Journal ID: ISSN 0022-3115

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; SiC; amorphization; nanostructured materials; carbides; scanning/transmission electron microscopy (STEM)

Citation Formats


                    Imada, Kenta, Ishimaru, Manabu, Xue, Haizhou, Zhang, Yanwen, Shannon, Steven C., and Weber, William J. Amorphization resistance of nano-engineered SiC under heavy ion irradiation.  United States: N. p., 2016. 
Web.  doi:10.1016/j.jnucmat.2016.06.031.

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                    Imada, Kenta, Ishimaru, Manabu, Xue, Haizhou, Zhang, Yanwen, Shannon, Steven C., & Weber, William J. Amorphization resistance of nano-engineered SiC under heavy ion irradiation.  United States.  https://doi.org/10.1016/j.jnucmat.2016.06.031

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                    Imada, Kenta, Ishimaru, Manabu, Xue, Haizhou, Zhang, Yanwen, Shannon, Steven C., and Weber, William J. Sun .  
"Amorphization resistance of nano-engineered SiC under heavy ion irradiation".  United States.  https://doi.org/10.1016/j.jnucmat.2016.06.031.  https://www.osti.gov/servlets/purl/1261569.

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@article{osti_1261569,

  title        = {Amorphization resistance of nano-engineered SiC under heavy ion irradiation},

  author       = {Imada, Kenta and Ishimaru, Manabu and Xue, Haizhou and Zhang, Yanwen and Shannon, Steven C. and Weber, William J.},

  abstractNote = {Silicon carbide (SiC) with a high-density of planar defects (hereafter, ‘nano-engineered SiC’) and epitaxially-grown single-crystalline 3C-SiC were simultaneously irradiated with Au ions at room temperature, in order to compare their relative resistance to radiation-induced amorphization. Furthermore, it was found that the local threshold dose for amorphization is comparable for both samples under 2 MeV Au ion irradiation; whereas, nano-engineered SiC exhibits slightly greater radiation tolerance than single crystalline SiC under 10 MeV Au irradiation. Under 10 MeV Au ion irradiation, the dose for amorphization increased by about a factor of two in both nano-engineered and single crystal SiC due to the local increase in electronic energy loss that enhanced dynamic recovery.},

  doi          = {10.1016/j.jnucmat.2016.06.031},

  journal      = {Journal of Nuclear Materials},

  number       = ,

  volume       = 478,

  place        = {United States},

  year         = {Sun Jun 19 00:00:00 EDT 2016},

  month        = {Sun Jun 19 00:00:00 EDT 2016}

}

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