Highly mobile ferroelastic domain walls in compositionally graded ferroelectric thin films
Abstract
Domains and domain walls are critical in determining the response of ferroelectrics, and the ability to controllably create, annihilate, or move domains is essential to enable a range of next-generation devices. Whereas electric-field control has been demonstrated for ferroelectric 180° domain walls, similar control of ferroelastic domains has not been achieved. Here, using controlled composition and strain gradients, we demonstrate deterministic control of ferroelastic domains that are rendered highly mobile in a controlled and reversible manner. Through a combination of thin-film growth, transmission-electron-microscopy-based nanobeam diffraction and nanoscale band-excitation switching spectroscopy, we show that strain gradients in compositionally graded PbZr 1-x Ti x O 3 heterostructures stabilize needle-like ferroelastic domains that terminate inside the film. These needle-like domains are highly labile in the out-of-plane direction under applied electric fields, producing a locally enhanced piezoresponse. This work demonstrates the efficacy of novel modes of epitaxy in providing new modalities of domain engineering and potential for as-yet-unrealized nanoscale functional devices.
- Authors:
-
- Univ. of Illinois, Urbana-Champaign, IL (United States)
- Univ. of New South Wales, Sydney, NSW (Australia)
- Univ. of California, Berkeley, CA (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Oak Ridge National Laboratory (ORNL)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC); National Science Foundation (NSF)
- OSTI Identifier:
- 1261365
- Alternate Identifier(s):
- OSTI ID: 1439993
- Grant/Contract Number:
- AC05-00OR22725; AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Materials
- Additional Journal Information:
- Journal Volume: 15; Journal Issue: 5; Journal ID: ISSN 1476-1122
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Damodaran, Anoop, Okatan, M. B., Kacher, J., Gammer, C., Vasudevan, Rama, Pandya, S., Dedon, L. R., Mangalam, R. V., Jesse, Stephen, Balke, Nina, Minor, Andrew, Kalinin, Sergei V., and Martin, Lane W. W. Highly mobile ferroelastic domain walls in compositionally graded ferroelectric thin films. United States: N. p., 2016.
Web. doi:10.1038/nmat4567.
Damodaran, Anoop, Okatan, M. B., Kacher, J., Gammer, C., Vasudevan, Rama, Pandya, S., Dedon, L. R., Mangalam, R. V., Jesse, Stephen, Balke, Nina, Minor, Andrew, Kalinin, Sergei V., & Martin, Lane W. W. Highly mobile ferroelastic domain walls in compositionally graded ferroelectric thin films. United States. https://doi.org/10.1038/nmat4567
Damodaran, Anoop, Okatan, M. B., Kacher, J., Gammer, C., Vasudevan, Rama, Pandya, S., Dedon, L. R., Mangalam, R. V., Jesse, Stephen, Balke, Nina, Minor, Andrew, Kalinin, Sergei V., and Martin, Lane W. W. Mon .
"Highly mobile ferroelastic domain walls in compositionally graded ferroelectric thin films". United States. https://doi.org/10.1038/nmat4567. https://www.osti.gov/servlets/purl/1261365.
@article{osti_1261365,
title = {Highly mobile ferroelastic domain walls in compositionally graded ferroelectric thin films},
author = {Damodaran, Anoop and Okatan, M. B. and Kacher, J. and Gammer, C. and Vasudevan, Rama and Pandya, S. and Dedon, L. R. and Mangalam, R. V. and Jesse, Stephen and Balke, Nina and Minor, Andrew and Kalinin, Sergei V. and Martin, Lane W. W.},
abstractNote = {Domains and domain walls are critical in determining the response of ferroelectrics, and the ability to controllably create, annihilate, or move domains is essential to enable a range of next-generation devices. Whereas electric-field control has been demonstrated for ferroelectric 180° domain walls, similar control of ferroelastic domains has not been achieved. Here, using controlled composition and strain gradients, we demonstrate deterministic control of ferroelastic domains that are rendered highly mobile in a controlled and reversible manner. Through a combination of thin-film growth, transmission-electron-microscopy-based nanobeam diffraction and nanoscale band-excitation switching spectroscopy, we show that strain gradients in compositionally graded PbZr 1-x Ti x O 3 heterostructures stabilize needle-like ferroelastic domains that terminate inside the film. These needle-like domains are highly labile in the out-of-plane direction under applied electric fields, producing a locally enhanced piezoresponse. This work demonstrates the efficacy of novel modes of epitaxy in providing new modalities of domain engineering and potential for as-yet-unrealized nanoscale functional devices.},
doi = {10.1038/nmat4567},
journal = {Nature Materials},
number = 5,
volume = 15,
place = {United States},
year = {2016},
month = {2}
}
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