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Title: Synthesis of millimeter-scale transition metal dichalcogenides single crystals

Abstract

The emergence of semiconducting transition metal dichalcogenide (TMD) atomic layers has opened up unprecedented opportunities in atomically thin electronics. Yet the scalable growth of TMD layers with large grain sizes and uniformity has remained very challenging. Here is reported a simple, scalable chemical vapor deposition approach for the growth of MoSe2 layers is reported, in which the nucleation density can be reduced from 105 to 25 nuclei cm-2, leading to millimeter-scale MoSe2 single crystals as well as continuous macrocrystalline films with millimeter size grains. The selective growth of monolayers and multilayered MoSe2 films with well-defined stacking orientation can also be controlled via tuning the growth temperature. In addition, periodic defects, such as nanoscale triangular holes, can be engineered into these layers by controlling the growth conditions. The low density of grain boundaries in the films results in high average mobilities, around ≈42 cm2 V-1 s-1, for back-gated MoSe2 transistors. This generic synthesis approach is also demonstrated for other TMD layers such as millimeter-scale WSe2 single crystals.

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [3];  [1];  [1]
  1. Rice Univ., Houston, TX (United States)
  2. Vanderbilt Univ., Nashville, TN (United States)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Vanderbilt Univ., Nashville, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Advanced Scientific Computing Research (ASCR)
OSTI Identifier:
1261342
Alternate Identifier(s):
OSTI ID: 1597769
Grant/Contract Number:  
AC05-00OR22725; FG02-09ER46554
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Functional Materials
Additional Journal Information:
Journal Volume: 26; Journal Issue: 12; Journal ID: ISSN 1616-301X
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Gong, Yongji, Ye, Gonglan, Lei, Sidong, Shi, Gang, Vajtai, Robert, Pantelides, Sokrates T., Zhou, Wu, Li, Bo, and Ajayan, Pullikel M.. Synthesis of millimeter-scale transition metal dichalcogenides single crystals. United States: N. p., 2016. Web. https://doi.org/10.1002/adfm.201504633.
Gong, Yongji, Ye, Gonglan, Lei, Sidong, Shi, Gang, Vajtai, Robert, Pantelides, Sokrates T., Zhou, Wu, Li, Bo, & Ajayan, Pullikel M.. Synthesis of millimeter-scale transition metal dichalcogenides single crystals. United States. https://doi.org/10.1002/adfm.201504633
Gong, Yongji, Ye, Gonglan, Lei, Sidong, Shi, Gang, Vajtai, Robert, Pantelides, Sokrates T., Zhou, Wu, Li, Bo, and Ajayan, Pullikel M.. Wed . "Synthesis of millimeter-scale transition metal dichalcogenides single crystals". United States. https://doi.org/10.1002/adfm.201504633. https://www.osti.gov/servlets/purl/1261342.
@article{osti_1261342,
title = {Synthesis of millimeter-scale transition metal dichalcogenides single crystals},
author = {Gong, Yongji and Ye, Gonglan and Lei, Sidong and Shi, Gang and Vajtai, Robert and Pantelides, Sokrates T. and Zhou, Wu and Li, Bo and Ajayan, Pullikel M.},
abstractNote = {The emergence of semiconducting transition metal dichalcogenide (TMD) atomic layers has opened up unprecedented opportunities in atomically thin electronics. Yet the scalable growth of TMD layers with large grain sizes and uniformity has remained very challenging. Here is reported a simple, scalable chemical vapor deposition approach for the growth of MoSe2 layers is reported, in which the nucleation density can be reduced from 105 to 25 nuclei cm-2, leading to millimeter-scale MoSe2 single crystals as well as continuous macrocrystalline films with millimeter size grains. The selective growth of monolayers and multilayered MoSe2 films with well-defined stacking orientation can also be controlled via tuning the growth temperature. In addition, periodic defects, such as nanoscale triangular holes, can be engineered into these layers by controlling the growth conditions. The low density of grain boundaries in the films results in high average mobilities, around ≈42 cm2 V-1 s-1, for back-gated MoSe2 transistors. This generic synthesis approach is also demonstrated for other TMD layers such as millimeter-scale WSe2 single crystals.},
doi = {10.1002/adfm.201504633},
journal = {Advanced Functional Materials},
number = 12,
volume = 26,
place = {United States},
year = {2016},
month = {2}
}

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