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Title: Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

Abstract

To begin this abstract, amorphous metal-oxide semiconductors offer the high carrier mobilities and excellent large-area uniformity required for high performance, transparent, flexible electronic devices; however, a critical bottleneck to their widespread implementation is the need to activate these materials at high temperatures which are not compatible with flexible polymer substrates. The highly controllable activation of amorphous indium gallium zinc oxide semiconductor channels using ionic liquid gating at room temperature is reported. Activation is controlled by electric field-induced oxygen migration across the ionic liquid-semiconductor interface. In addition to activation of unannealed devices, it is shown that threshold voltages of a transistor can be linearly tuned between the enhancement and depletion modes. Finally, the first ever example of transparent flexible thin film metal oxide transistor on a polyamide substrate created using this simple technique is demonstrated. Finally, this study demonstrates the potential of field-induced activation as a promising alternative to traditional postdeposition thermal annealing which opens the door to wide scale implementation into flexible electronic applications.

Authors:
 [1];  [1];  [1];  [2];  [1];  [3];  [4];  [5];  [6]
  1. Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences and the Inst. for Functional Imaging of Materials
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Chemical Sciences Division
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
  5. Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
  6. Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Gordon and Betty Moore Foundation (United States)
OSTI Identifier:
1261299
Grant/Contract Number:  
AC05-00OR22725; SC0002136; GBMF4416
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Functional Materials
Additional Journal Information:
Journal Volume: 26; Journal Issue: 17; Journal ID: ISSN 1616-301X
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; activation; amorphous metal oxides; flexible electronics; ionic liquid gating; thin film transistors; field induced activation

Citation Formats

Pudasaini, Pushpa Raj, Noh, Joo Hyon, Wong, Anthony T., Ovchinnikova, Olga S., Haglund, Amanda V., Dai, Sheng, Ward, Thomas Zac, Mandrus, David, and Rack, Philip D.. Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices. United States: N. p., 2016. Web. https://doi.org/10.1002/adfm.201505274.
Pudasaini, Pushpa Raj, Noh, Joo Hyon, Wong, Anthony T., Ovchinnikova, Olga S., Haglund, Amanda V., Dai, Sheng, Ward, Thomas Zac, Mandrus, David, & Rack, Philip D.. Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices. United States. https://doi.org/10.1002/adfm.201505274
Pudasaini, Pushpa Raj, Noh, Joo Hyon, Wong, Anthony T., Ovchinnikova, Olga S., Haglund, Amanda V., Dai, Sheng, Ward, Thomas Zac, Mandrus, David, and Rack, Philip D.. Tue . "Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices". United States. https://doi.org/10.1002/adfm.201505274. https://www.osti.gov/servlets/purl/1261299.
@article{osti_1261299,
title = {Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices},
author = {Pudasaini, Pushpa Raj and Noh, Joo Hyon and Wong, Anthony T. and Ovchinnikova, Olga S. and Haglund, Amanda V. and Dai, Sheng and Ward, Thomas Zac and Mandrus, David and Rack, Philip D.},
abstractNote = {To begin this abstract, amorphous metal-oxide semiconductors offer the high carrier mobilities and excellent large-area uniformity required for high performance, transparent, flexible electronic devices; however, a critical bottleneck to their widespread implementation is the need to activate these materials at high temperatures which are not compatible with flexible polymer substrates. The highly controllable activation of amorphous indium gallium zinc oxide semiconductor channels using ionic liquid gating at room temperature is reported. Activation is controlled by electric field-induced oxygen migration across the ionic liquid-semiconductor interface. In addition to activation of unannealed devices, it is shown that threshold voltages of a transistor can be linearly tuned between the enhancement and depletion modes. Finally, the first ever example of transparent flexible thin film metal oxide transistor on a polyamide substrate created using this simple technique is demonstrated. Finally, this study demonstrates the potential of field-induced activation as a promising alternative to traditional postdeposition thermal annealing which opens the door to wide scale implementation into flexible electronic applications.},
doi = {10.1002/adfm.201505274},
journal = {Advanced Functional Materials},
number = 17,
volume = 26,
place = {United States},
year = {2016},
month = {2}
}

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